TA09770 Search Results

f14n05

Abstract: AN9321 AN9322 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 TB334 mosfet 4413
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09770. Ordering Information PACKAGE 2268.5 Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet Title FD1 05, D14 5S P14 5 bt A, V, 00 m, anwer OSTs) utho eyrds ter- July 1999 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

AN7254

Abstract: AN7260 AN9321 AN9322 RFP14N06 TB334
Contextual Info: RFP14N06 Data Sheet Title FP1 06 bt A, V, 00 m, 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET Features This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum

d14n05

Abstract: d14n05 220 package RFD14N05 AN9321 RFD14N05SM RFD14N05SM9A RFP14N05 TB334
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

f14n05

Abstract: RFD14N05 RFP14N05 AN9321 AN9322 RFD14N05SM RFD14N05SM9A TB334
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

f14n05

Abstract: AN7254 AN7260 AN9321 RFD14N05 RFD14N05SM RFD14N05SM9A RFP14N05 JEDEC TO-251AA
Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 S E M I C O N D U C T O R 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-220AB • 14A, 50V SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

F14N06

Abstract: AN7254 AN7260 AN9321 RFD14N06 RFD14N06SM RFP14N06
Contextual Info: RFD14N06, RFD14N06SM, RFP14N06 S E M I C O N D U C T O R 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging JEDEC TO-220AB • 14A, 60V SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

F14N06

Abstract: ECE relay rfd14n06
Contextual Info: f j l H A R R RFD14N06, RFD14N06SM, RFP14N06 I S S E M I C O N D U C T O R 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JEDEC TO-22ÛAB • 14A ,60V • *DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model

f14n05

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 interrii — 1 D a ta S h e e t J u ly 1 9 9 9 , • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

f14n05

Abstract: RFD14N05SM AN7254 AN9321 AN9322 RFD14N05 RFD14N05SM9A TB334
Contextual Info: RFD14N05, RFD14N05SM Data Sheet 14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: in te r r ii RFP14N06 D a ta S h e e t 14A, 60 V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It

Contextual Info: RFD14N06, RFD14N06SM, RFP14N06 HARRIS r^ o V o V ^ 14A, 60V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs MegaFETs Ju n e 1995 Packaging Features JEDEC T0-220AB • 14A, 60V • rDS(ON) SOURCE = 0.100i2 • Temperature Compensating PSPICE Model

Contextual Info: RFD14N05SM9A September 2013 Data Sheet Features N-Channel Power MOSFET 50V, 14A, 100 mΩ • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

Contextual Info: RFD14N05, RFD14N05SM, RFP14N05 Semiconductor Data Sheet July 1999 14A, 50 V, 0.100 Ohm, N-Channel Power MOSFETs File Number 2268.5 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

AN7254

Abstract: AN7260 AN9321 AN9322 RFP14N06 TB334
Contextual Info: RFP14N06 Data Sheet 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It

AN7254

Abstract: AN7260 AN9321 AN9322 RFP14N06 TB334
Contextual Info: RFP14N06 Data Sheet 14A, 60V, 0.100 Ohm, N-Channel Power MOSFET This N-Channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It