TA09870 Search Results

mosfet motor dc 48v

Abstract: 14n06l 14N06 FP14N RELAY 4088 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V Formerly developmental type TA09870. Ordering Information PACKAGE 4088.3 Features These are N-Channel power MOSFETs manufactured using

tt 2246

Abstract: Transistor TT 2246 14n05l equivalent tt 2246 14n05 TT 2246 datasheet 14A, 50V, Logic Level, N-Channel TO-252 RFP14N05L AN9321 RFD14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V Formerly developmental type TA09870. Ordering Information PACKAGE 2246.3 Features These are N-channel power MOSFETs manufactured using

RELAY 4088

Abstract: TB334 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet Title FD1 06L D14 6LS P14 6L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using

14N05

Abstract: 14n05l 05LSM AN7254 AN9321 AN9322 RFD14N05L RFD14N05LSM RFD14N05LSM9A TB334
Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet Title FD1 05L D14 5LS P14 5L bt A, V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features These are N-channel power MOSFETs manufactured using

f14n05l

Abstract: f14n05 14n05l 14N05 AN9321 RFD14N05L RFD14N05LSM RFD14N05LSM9A RFP14N05L TB334
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

14n05l

Abstract: FP14N05L RFD14N05LSM9A 14N05
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L in te v s il D a ta S h e e t A p r i l 1999 14A, SOV, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs 2 2 4 6 .3 Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

Contextual Info: RFD14N05L, RFD14N05LSM Data Sheet N-Channel Logic Level Power MOSFET 50 V, 14 A, 100 mΩ These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding

14n05l

Abstract: 14N05LSM RFD14N05L
Contextual Info: is HARFRIS U U R F D 14N 0 5 L , R F D 14N 0 5 L S M , R F P 1 4 N 0 5 L. S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packaging Features JE D EC TO-22QAB • 14A , 50V • ^DS{ON = 0.10012

Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Semiconductor April 1999 Data Sheet 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL

14n05l

Abstract: 14N05 RFD14N05LSM9A TB334 AN9321 RFD14N05L RFD14N05LSM RFP14N05L
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet January 2002 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

RELAY 4088

Abstract: AN7254 AN7260 RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L 48v 100a
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L S E M I C O N D U C T O R 14A, 60V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Packaging • 14A, 60V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

14n05l

Abstract: 14N05 Transistor TT 2246 TT 2246 RFD14N05LSM RFP14N05L RFD14N05L rs 355 integrated circuits FP14N05L AN7254
Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S E M I C O N D U C T O R 14A, 50V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packaging • 14A, 50V JEDEC TO-220AB SOURCE DRAIN GATE • rDS ON = 0.100Ω • Temperature Compensating PSPICE Model

f14n05l

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 50V These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

LM 4088 relay

Abstract: LM 17812
Contextual Info: J lï H A R R IS UU RFD14N06L, RFD14N06LSM, RFP14N0ÔL S E M I C O N D U C T O R 14A, 60V, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs D ecem ber 19 9 5 Packaging Features JE D EC TO -220A B • 14A , 6 0 V • r DS ON = O - I O O tl

Contextual Info: RFD14N05L, RFD14N05LSM, RFP14N05L S e m ico n d ucto r Data Sheet April 1999 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 50V • r DS ON = 0 .1 0 0 i2 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and

RFD14N06L

Abstract: RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
Contextual Info: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet January 2002 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

TO-252AA intersil

Contextual Info: in t e r r ii RFD14N06L, RFD14N06LSM, RFP14N06L D a ta S h e e t J u ly 1 9 9 9 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs • 14A, 60V " rDS ON = 0.10012 • Temperature Compensating PSPICE Model • Can be Driven Directly from CMOS, NMOS, and TTL