RF TRANSISTOR 2.5GHZ Search Results

RF TRANSISTOR 2.5GHZ Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

RF TRANSISTOR 2.5GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CGH40045F Abstract: CGH40045 10UF cree L2 Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40045 CGH40045 CGH40045, CGH4004 CGH40045F 10UF cree L2	PDF
CGH40045F Abstract: CGH40045 ATC100B Cree Microwave 10UF JESD22 Contextual Info: CGH40045F 45 W, RF Power GaN HEMT Cree’s CGH40045F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40045F CGH40045F CGH40045F, CGH4004 CGH40045 ATC100B Cree Microwave 10UF JESD22	PDF
CGH40045 Abstract: 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40045 CGH40045 CGH40045, CGH4004 8644 cgh40045f 8822 TRANSISTOR ATC100B Cree Microwave TC 8644 10UF 33UF RO4350B	PDF
Contextual Info: RF & Protection Devices Board Name BFP 540ESD Evalboard Products Description Order No. BFP 540ESD A low-cost, low-current broadband UHF low noise amplifier with the ESD-robust BFP 540ESD RF transistor. BFP540ESD board This board shows the ESD-robust BFR 460L3 board in ISM and	Original	540ESD 540ESD BFP540ESD 460L3 BFR460L3 434MHz BFP460 360L3 340L3	PDF
Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40045 CGH40045 CGH40045, CGH4004	PDF
Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer	Original	CGH40045 CGH40045 CGH40045, CGH4004	PDF
Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P	PDF
CGH40045 Abstract: CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045F JESD22 AN 17821 A 40045P CGH40045-TB	PDF
CGH40045 Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P	PDF
Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P	PDF
Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P	PDF
CGH40045 Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P	PDF
CGH40045-TB Abstract: CGH40045 Contextual Info: CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high	Original	CGH40045 CGH40045 CGH40045, CGH40 40045P CGH40045-TB	PDF
Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process.	Original	START499 42GHz OT343 START499 OT343 START499TR	PDF

0765 ic Contextual Info: START499 NPN Silicon RF Transistor PRELIMINARY DATA • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process.	Original	START499 42GHz OT343 START499 OT343 START499TR 0765 ic	PDF
ic 1496 specifications Abstract: ic 1496 applications sot-343 START499 Contextual Info: START499 NPN Silicon RF Transistor PRELIMINARY DATA • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) DESCRIPTION START499 is a product of the START family that provide the market with a Si state-of-art RF process.	Original	START499 42GHz OT343 START499 OT343 ic 1496 specifications ic 1496 applications sot-343	PDF
JESD22-C101A Abstract: PD27025F RF MOSFET CLASS AB Contextual Info: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station	Original	PD27025F PD27025F JESD22-C101A RF MOSFET CLASS AB	PDF
JESD22-C101A Abstract: PD25025F RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A Contextual Info: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station	Original	PD25025F PD25025F JESD22-C101A RF MOSFET CLASS AB mosfet rf class ab JESD22-A115A	PDF
JESD22-C101A Abstract: PD27025F Contextual Info: PD27025F 25 W, 2.5GHz - 2.7GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD27025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.5GHz - 2.7GHz Class AB wireless base station	Original	PD27025F PD27025F 330mA 100kHz JESD22-C101A	PDF
JESD22-C101A Abstract: PD25025F rf transistor 2.5GHz RF MOSFET CLASS AB Contextual Info: PD25025F 25 W, 2.3GHz - 2.5GHz , N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The PD25025F is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for 2.3GHz - 2.5GHz Class AB wireless base station	Original	PD25025F PD25025F 330mA 100kHz JESD22-C101A rf transistor 2.5GHz RF MOSFET CLASS AB	PDF
transistor C640 Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368 Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that	Original	START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor bf 179 transistor c640 npn START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368	PDF
transistor C640 Abstract: c640 transistor START499 START499TR Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that	Original	START499 42GHz OT343 START499TR START499 OT343 transistor C640 c640 transistor START499TR	PDF
transistor C640 Abstract: transistor c640 npn c640 transistor rc 3150 930E-15 573E SPICE PARAMETER, STMicroelectronics, bipolar transistor Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that	Original	START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor c640 npn c640 transistor rc 3150 930E-15 573E SPICE PARAMETER, STMicroelectronics, bipolar transistor	PDF
transistor C640 Abstract: transistor c640 npn c640 transistor START499 START499TR transistor bf 171 Contextual Info: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that	Original	START499 42GHz OT343 START499TR START499 OT343 transistor C640 transistor c640 npn c640 transistor START499TR transistor bf 171	PDF

RF TRANSISTOR 2.5GHZ Search Results

RF TRANSISTOR 2.5GHZ Result Highlights (5)

RF TRANSISTOR 2.5GHZ Datasheets Context Search

CGH40045F

CGH40045F

CGH40045

CGH40045

CGH40045

CGH40045

CGH40045-TB

0765 ic

ic 1496 specifications

JESD22-C101A

JESD22-C101A

JESD22-C101A

JESD22-C101A

transistor C640

transistor C640

transistor C640

transistor C640