RF POWER W AN Search Results

flange RF resistor 50

Abstract: resistor rohs
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W

flange RF resistor 50

Abstract: AL203 resistor rohs flange RF termination 50
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 1 GHz Flanged model Low VSWR Lead free and RoHS compliant* ■ High power RF transmission CHF11050CBF Series 400 W Power RF Flanged Resistor Absolute Ratings W

Contextual Info: NXP LDMOS RF power transistor BLF578 LDMOS RF power transistor delivering 1000 W of CW output power Delivering 1000 W of CW output power with 26 dB of gain and 75% efficiency, this rugged LDMOS device is ideally suited for use in broadcast transmitters and industrial, scientific and

powermax

Contextual Info: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)

2N3553 equivalent

Abstract: vk-200 ferrite choke vk200* FERROXCUBE 2N3553 VK-200 VK200 MM4019 ATC200
Contextual Info: MM4019 silicon PNP SILICON RF POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR . . . designed for use as complement to NPN 2N 3553 in VH F and UHF amplifier applications for military and industrial equipment. • Power Output - Pout = 2.0 W (Typ) @ Pjn = 0.5 W, f = 400 MHz

78L08

Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
Contextual Info: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,

Contextual Info: MOTOROLA The RF Line MHW1815 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 32 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1805–1880 MHz RF POWER AMPLIFIER

Contextual Info: MOTOROLA The RF Line MHW1915 Microwave Bipolar Power Amplifier LIFETIME BUY • Specified 26 Volt Characteristics: RF Output Power: 15 Watts RF Power Gain: 31 dB Typ Efficiency: 25% Min • 50 Ohm Input/Output System 15 W 1930–1990 MHz RF POWER AMPLIFIER

TPS9103

Abstract: MOSFET FOR AMP POWER SUPPLY SWITCHING depletion MOSFET 1 amp FET switch GaAs FET chip
Contextual Info: P O W E R S U P P L Y Product Features • Fully-integrated GaAs power amplifier power supply ■ 180-mΩ RDS on high side switch with logic-compatible input Power supply for GaAs power amplifiers Antenna RF Microphone VBAP VBAP Speaker DSP DSP RF RF CODEC

flange RF resistor 50

Abstract: AL203 CHF190104CBF
Contextual Info: NT CO M PL IA Features • *R oH S ■ ■ Applications DC to 1 GHz Flanged model Low VSWR ■ High power RF transmission CHF190104CBF Series 800 W Power RF Flanged Chip Termination/Resistor Absolute Ratings W

S-AU80

Abstract: TOSHIBA RF Power Module S-AV17 toshiba s-au80 quality FM TRANSMITTER S-AV17 toshiba 2sc2879 2sc2879 equivalent 2SK3075 S-AV6 5252 F ic
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

S-AV17

Abstract: 2SC2879 2SK3075 s-av6 quality FM TRANSMITTER 2SK1310 TOSHIBA RF Power Module S-AV17 S-AU80 2SK2854 2SK3079
Contextual Info: RF Power Devices PRODUCT GUIDE • Selection Guide for RF Power Transistors Package PO W ø 12.7 10PEP 20PEP HF 30 MHz 60PEP 2SC2290 100PEP 2SC2879 150PEP 2SC2510* * : VCC = 28 V Package PO (W) ø 12.7 6 28 VHF 175 MHz 32 80 4 2SC2782 ■ Main Characteristics of RF Power Transistors

VK200-20-4B

Abstract: MRF5175 choke vk200 VK20020-4B 56590 VK200 FERRITE MRF5175 transistor VK-200-20-4B type 2951 vk200 ferrite bead
Contextual Info: MRF5175 SILICON The RF Line 5 W - 400 M Hz RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR NPN SILICON . . designed p rim a rily fo r w ideba nd large-signal d riv e r and predriver a m p lifie r stages in th e 2 00 -60 0 M H z fre q u e n c y range.

MRF255 equivalent

Abstract: mrf255 mosfet MRF255 MRF255PHT arco 461 mica trimmer ES211 "RF MOSFETs" 100 watt hf mosfet 12 volt 14 watt hf mosfet 12 volt vdd 2204B
Contextual Info: MOTOROLA Order this document by MRF255/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF255 RF Power Field-Effect Transistor N–Channel Enhancement–Mode 55 W, 12.5 Vdc, 54 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and industrial applications at frequencies

POWER500

Abstract: 12545
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ Applications DC to 1 GHz Flanged model Low VSWR ■ High power RF transmission CHF12545CBF Series 500 W Power RF Flanged Chip Termination Absolute Ratings W Frequency .1.0 GHz

AL203

Abstract: CHF5225CBF CHF5225
Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ Applications DC to 4 GHz Flanged model Low VSWR ■ High power RF transmission CHF5225CBF Series 60 W Power RF Flanged Chip Termination Absolute Ratings W Frequency .4.0 GHz

Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ Applications DC to 1 GHz Flanged model Low VSWR ■ High power RF transmission CHF12545CBF Series 500 W Power RF Flanged Chip Termination Absolute Ratings W Frequency .1.0 GHz

flange RF resistor 50

Abstract: AL203 CHF12545CBF POWER500 12545
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ Applications DC to 1 GHz Flanged model Low VSWR ■ High power RF transmission CHF12545CBF Series 500 W Power RF Flanged Chip Termination Absolute Ratings W Frequency .1.0 GHz

CHF2010CNP

Contextual Info: NT IA PL • *R oH S CO M Features ■ ■ ■ Applications DC to 2 GHz Terminals for PCB placement Low VSWR Aluminum Nitride ceramic ■ ■ ■ RF amplifiers Attenuators Antenna feeds CHF2010CNP Series 10 W Power RF Chip Termination Absolute Ratings W

narda divider

Contextual Info: Main Menu Power Meters/Monitors RF Radiation Safety Products Active Components Passive Components Electromechanical RF Switches Wireless Products Power Dividers 6-18 GHz HIGH POWER 75W CW IN-PHASE POWER DIVIDER • 75 W CW Capability into Severe Mismatch · 75 W CW Capability at Elevated Ambient

flange RF termination 50

Abstract: SR0602 CHF9838CNF nt 9838
Contextual Info: NT *R oH S CO M PL IA Features • ■ ■ ■ Applications DC to 2.2 GHz Flanged model Low VSWR Aluminum Nitride Ceramic ■ High power RF transmission CHF9838CNF Series 250 W Power RF Flanged Chip Termination Absolute Ratings Power .250 W

Contextual Info: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838CNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W

Contextual Info: NT IA PL M CO • ■ *R oH S Features ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Aluminium Nitride ceramic ■ High power RF transmission CHF8838xNF Series 150 W Power RF Flanged Chip Termination Absolute Ratings W

flange RF termination 50

Abstract: AL203 CHF9838CBF nt 9838
Contextual Info: NT IA PL M CO S oH *R Features • ■ ■ ■ Applications DC to 3.0 GHz Flanged model Low VSWR Beryllium Oxide ceramic ■ High power RF transmission CHF9838CBF Series 250 W Power RF Flanged Chip Termination Absolute Ratings W