POWERMAX Search Results

Contextual Info: Application Note 114 Using LabVIEW to Create Multithreaded Applications for Maximum Performance and Reliability Introduction Modern operating systems, such as Windows NT/95, Sun Solaris 2, and Concurrent PowerMAX, provide multithreading technology and the ability to exploit multiprocessor computers. Unfortunately, these technologies and

wireless remote control unit

Abstract: DE5450P powercode visonic CR123A PowerMax emergency light introduction
Contextual Info: MCM-140 MCM-140 User’s Guide Wireless Remote Commander 1. INTRODUCTION The MCM-140 is a wireless remote control unit for the PowerMax system. It enables the user to arm/disarm the alarm system, to initiate emergency/fire/panic alarms, to perform one of the AUX

WD K1N

Contextual Info: INGECON SUN PowerMax U TL X Outdoor Installation and usage manual ABB2000IKI02_ 05/2013 Ingeteam Inc 3550 W. Canal St. Milwaukee, WI 53208 - USA Tel.: +1 414 934 4100 Fax.: +1 (414) 342 0736 e-mail: solar.us@ingeteam.com Service Call Center: +1 (414) 934 4158

10 W solar module spectrum am 1.5

Abstract: IEC61215 PowerMax PowerMax 1000 15 W solar module spectrum am 1.5
Contextual Info: Product Information Sheet Grid Power Valid world-wide except North America and Japan 150-C/160-C Get the Power Advantage Shell PowerMax Plus is a range of high performance, reliable photovoltaic modules from Shell Solar. The Shell PowerMax range of products is backed by a company

Contextual Info: Low Phase Noise, Dual 1-to-8, 3.3V, 2.5V LVPECL Output Fanout Buffer IDT8SLVP2108I DATASHEET General Description Features The IDT8SLVP2108I is a high-performance differential dual 1:8 LVPECL fanout buffer. The device is designed for the fanout of high-frequency, very low additive phase-noise clock and data signals.

Contextual Info: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs

hym7v64200

Contextual Info: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

visonic

Abstract: MCT-234 MPT1349 visonic alarm system L1028 DE2380 phillips rolling code mct 12 Keyfob transmitter KEYFOB
Contextual Info: MCT-234 MCT-234 Wireless CodeSecure Keyfob Transmitter Installation Instructions 1. INTRODUCTION The MCT-234 is a miniature CodeSecure™ 4-button 4-function transmitter, designed for use with advanced, high-security alarm and remote control systems such as the Visonic Ltd. UL-listed

Contextual Info: Low phase noise, Dual 1-to-6, 3.3V, 2.5V LVPECL Output Fanout Buffer IDT8SLVP2106I DATASHEET General Description Features The IDT8SLVP2106I is a high-performance differential dual 1:6 LVPECL fanout buffer. The device is designed for the fanout of high-frequency, very low additive phase-noise clock and data signals.

powermax

Contextual Info: 8-Module C‐Band Systems SSPA Module Power Level 8-Module RF Output Power 16‐Module C‐Band Systems 7-Module Redundant RF Output Power SSPA Module Power Level 16-Module RF Output Power 15-Module Redundant RF Output Power Psat typical dBm (W)

MOSFET IRF740 as switch

Abstract: 4-pin optoisolator ltafx mosfet Gate Drive 250 amp breaker 8 pin 4v power supply converter diode led uv irf740 mosfet ltwq snubber capacitor 68NF
Contextual Info: LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 Negative Voltage Hot Swap Controllers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Allows Safe Board Insertion and Removal from a Live – 48V Backplane Floating Topology Permits Very High Voltage

Contextual Info: LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 Negative Voltage Hot Swap Controllers Features Description Allows Safe Board Insertion and Removal from a Live – 48V Backplane n Floating Topology Permits Very High Voltage Operation n Current Limit With Circuit Breaker Timer

Texas Instruments Power Management Guide

Abstract: TPS53312 TPS65168 Samsung Exynos 5 TPS65178 ips 500w circuit diagram 500w push-pull power tl598 schematic diagram Acid Battery charger 48 volt circuit tl494 UCC25600 application note Buck-boost TL494
Contextual Info: Power Management Guide www.ti.com/power 2013 Power Management Guide Introduction and Contents Texas Instruments TI offers complete power solu­tions with a full line of highperformance products. These products, which range from standard linear regulators to highly efficient DC/DC

1A11BS

Contextual Info: mV Y II II 11A I li II li fl • HY57V16401 Series 4M X 4 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16401 is a very high speed 3.3 Volt synchronous dynamic RAM organized 4,194,304x4brts, and fabricated w ith the Hyundai CM O S process. This dual bank circuit consists of two m emories, each 2,097,152

CQ58

Contextual Info: - » Y U H D f l l —• HYM7V64200B Z-SERIES SO DIMM 2MX64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in 44-pin SOJ or TSOPli and 8-pin TSSO P 2K bit EEPROM on a 144-pin glassepoxy circuit board. Two 0.22|iF and 0.0022|_iF decoupling capacitors are mounted for each SDRAM.

GR-253-CORE

Abstract: HFE7100
Contextual Info: RoHS compliant TX-1550/RX-1310 nm Multi-mode, Single-fiber Bi-directional Transceiver 1x9, SC Simplex Connector, 3.3V (2km) 155 Mbps ATM/SONET OC-3/SDH STM-1/Fast Ethernet Features „ RoHS compliant „ Industry standard 1x9 footprint „ SC Connector „ Single power supply 3.3 V

HFE7100

Abstract: GR-253-CORE
Contextual Info: RoHS compliant TX-1550/RX-1310 nm Multi-mode, Single-fiber Bi-directional Transceiver 1x9, SC Simplex Connector, 3.3V (5km) 155 Mbps ATM/SONET OC-3/SDH STM-1/Fast Ethernet Features „ RoHS compliant „ Industry standard 1x9 footprint „ SC Connector „ Single power supply 3.3 V

GR-253-CORE

Abstract: HFE7100 1600nm Transceiver
Contextual Info: RoHS compliant TX-1310/RX-1550 nm Single-mode, Single-Fiber Bi-directional Transceiver 1x9, SC Simplex Connector, 3.3 V (26dB Margin) 155 Mbps ATM/SONET OC-3/SDH STM-1/Fast Ethernet Features RoHS compliant Compatible with 155 Mbps ATM and SONET OC-3 SDH STM-1

23K18

Abstract: MB91V460 UG 9C JP35 FR60 LQFP120 MB91460 VG96 91F465 MCU 101
Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910026-13 MB91460 SERIES EVALUATION BOARD SK-91465K-120PMT USER GUIDE SK-91465K-120PMT User Guide Revision History Revision History Date 2006/05/15 2006/11/01 2006/11/27 2007/03/02 2008/03/27 Issue V1.0, MH, First draft

hym7v64400

Contextual Info: HYM7V64400B K-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 4Mx4 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit

Contextual Info: HYM7V72A400B F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V72A400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy

ltwq

Abstract: marking ltrt MOSFET IRF540 IRF540S LTRT IRF540 MOSFET 250 amp breaker LTC4252-1CMS8 IRF530S LTC4252
Contextual Info: LTC4252-1/LTC4252-2 Negative Voltage Hot Swap Controllers U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 4252 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Output current is controlled by three stages

DDZ13B

Abstract: IRF530S LTC4252 LTC4252-1 LTC4252-2 marking ltrt MOSFET IRF740 as switch LTC4252-1CMS8 ltAGF LTC4252A-2CMS
Contextual Info: LTC4252-1/LTC4252-2 LTC4252A-1/LTC4252A-2 Negative Voltage Hot Swap Controllers FEATURES DESCRIPTION n The LTC 4252 negative voltage Hot SwapTM controller allows a board to be safely inserted and removed from a live backplane. Output current is controlled by three stages

Contextual Info: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words