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    CRCW2010499RFKEF Search Results

    CRCW2010499RFKEF Datasheets (2)

    Vishay Dale
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CRCW2010499RFKEF
    Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 499 OHM 1% 3/4W 2010 Original PDF 114.01KB
    CRCW2010499RFKEFHP
    Vishay Dale Resistors - Chip Resistor - Surface Mount - RES SMD 499 OHM 1% 1W 2010 Original PDF 153.05KB
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    Vishay Intertechnologies CRCW2010499RFKEFHP

    Res Thick Film 2010 499 Ohm 1% 1W ±100ppm/°C Pad SMD T/R Automotive AEC-Q200
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    Verical CRCW2010499RFKEFHP 2,295 44
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    Avnet Americas CRCW2010499RFKEFHP Tape & Reel 12 Weeks 4,000
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    Arrow Electronics CRCW2010499RFKEFHP Cut Strips 2,295 12 Weeks 1
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    Avnet Abacus CRCW2010499RFKEFHP Tape & Reel 15 Weeks 4,000
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    Vishay Intertechnologies CRCW2010499RFKEF

    SMD Chip Resistor, 499 ohm, ? 1%, 750 mW, 2010 [5025 Metric], Thick Film, General Purpose - Product that comes on tape, but is not reeled (Alt: 53K3832)
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    Avnet Americas () CRCW2010499RFKEF Ammo Pack 1
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    CRCW2010499RFKEF Tape & Reel 26 Weeks 4,000
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    Newark () CRCW2010499RFKEF Cut Tape 2,315 1
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    CRCW2010499RFKEF Tape & Reel 2,315 10
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    CRCW2010499RFKEF Tape & Reel 4,000
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    CRCW2010499RFKEF Tape & Reel 4,000
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    Future Electronics CRCW2010499RFKEF Reel 26 Weeks 4,000
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    Avnet Abacus CRCW2010499RFKEF Tape & Reel 17 Weeks 4,000
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    Vishay Dale CRCW2010499RFKEF

    RESISTOR;THICK FILM;499 OHMS;0.75 W;1%;SMT;2010;TCR 37 PPM/DEGC;TAPE AND REEL
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    RS CRCW2010499RFKEF Bulk 4,000
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    Quest Components CRCW2010499RFKEF 140
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    CRCW2010499RFKEF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    OP6180

    Abstract: CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0
    Contextual Info: AN10951 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P Rev. 1 — 10 December 2010 Application note Document information Info Content Keywords Doherty architecture, Digital PreDistortion DPD , IS-95, multi-carrier


    Original
    an10951blf7g20ls-90pblf7g21ls-160pis-95+10op6180crcw08050r0fkea84253214w-1-201epl-46panasonic inductor date code nhtransistor c114 transistorstransistor c114 chipnxp 544grm31cr72a105ka0 PDF

    78L08

    Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544
    Contextual Info: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original
    an10885blf7g22ls-13078l08mmbt2222+22n2222nxp 544 PDF

    OP6180

    Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
    Contextual Info: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power


    Original
    an10921blf7g20ls-200op6180op6180-dev+64g base station power amplifierop6180-devsad9122transistor c104transistor c114 diagramtransistor c118 PDF

    Contextual Info: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 2 — 28 October 2013 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original
    an10944blf7g20ls-2001j503s1p503s PDF

    blf574

    Abstract: Anzac CH132 amidon BN-61-202 ATC100B6R8CT500X NARDA 3020A bn-61-202 FM low power LDMOS NXP transistor semirigid cw 7808 hp778d
    Contextual Info: AN10714 Using the BLF574 in the 88 MHz to 108 MHz FM band Rev. 01 — 26 January 2010 Application note Document information Info Content Keywords BLF574, 600 MHz performance, high voltage LDMOS, amplifier implementation, Class-B CW, FM band, pulsed power Abstract


    Original
    an10714blf574anzac ch132amidon bn-61-202+7atc100b6r8ct500xnarda 3020abn-61-202fm low power ldmos nxp transistorsemirigidcw 7808hp778d PDF

    Rogers 3006

    Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
    Contextual Info: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original
    an10944blf7g20ls-200rogers 3006transistor c118+7r105njm 78l08ua-ndnjm78l08uatransistor npn c115an1094c106c109 PDF

    blf578

    Abstract: BN-61-202 NARDA 3020A BLF578 fm band cw 7808 ATC100B391 blf574 amidon BN-61-202 BN61202 ATC100B391JT500X
    Contextual Info: AN10800 Using the BLF578 in the 88 MHz to 108 MHz FM band Rev. 01 — 13 October 2009 Application note Document information Info Content Keywords BLF578, performance, high-efficiency tuning set-up, high voltage LDMOS, amplifier implementation, Class-C CW, FM band, pulsed power


    Original
    an10800blf578bn-61-202narda 3020a+7blf578 fm bandcw 7808atc100b391blf574amidon bn-61-202bn61202atc100b391jt500x PDF

    CRCW08050R0FKEA

    Abstract: 3214W-1-201E S0805W104K1HRN-P4 BLF7G27-150P GRM32ER7YA106K88L GRM31MR71H105K88L NJM 78L08UA-ND 30RF35 BLF7G27LS-150P national 2n2222
    Contextual Info: AN10933 2.5 GHz to 2.7 GHz Doherty power amplifier using the BLF7G27LS-150P Rev. 01 — 16 August 2010 Application note Document information Info Content Keywords RF power transistor, Doherty architecture, LDMOS, RF performance, Digital PreDistortion DPD , IS-95, W-CDMA, BLF7G27LS-150P


    Original
    an10933blf7g27ls-150pis-95crcw08050r0fkea+83214w-1-201es0805w104k1hrn-p4blf7g27-150pgrm32er7ya106k88lgrm31mr71h105k88lnjm 78l08ua-nd30rf35national 2n2222 PDF

    NJM 78L08UA-ND

    Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor
    Contextual Info: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,


    Original
    an10885blf7g22ls-130njm 78l08ua-ndnxp 544+8s0805w104k1hrns0805w104k1hrn-p4ro3000digital pre-distortion1j503sdigital predistortion dpd 2carrier wcdmacrcw2010499rfkefd 2095 transistor PDF