RF GAN AMPLIFIER Search Results

X-band Gan Hemt

Abstract: GaN amplifier Gan on silicon substrate rf gan amplifier MMIC X-band amplifier x-Band Hemt Amplifier AlGaN/GaN HEMTs Gan on silicon transistor Gan transistor k 1535
Contextual Info: APPLICATION NOTE AN-011 GaN Essentials AN-011: Substrates for GaN RF Devices NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-011 GaN Essentials: Substrates for GaN RF Devices 1. Table of Contents 1. Table of Contents. 2

Contextual Info: High Performance RF for the Most Demanding Applications GaN High Performance RF Power, GaN NXP’s mainstream GaN Technology Enables an NXP solutions offering that is technology agnostic NXP’s LDMOS and GaN can be combined in a line-up for optimum performance and cost

Contextual Info: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   RF IN VG Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged

Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB

"RF Switch"

Abstract: rf switch RFMD HEMT GaN SiC SiC BJT RFSW2100D GaN BJT
Contextual Info: RFSW2100D 75W GaN-onSiC Reflective SPDT RF Switch RFSW2100D Proposed 75W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Features  Broadband Operation 30MHz to 6000MHz  Advanced GaN HEMT Technology  2GHz Typical Performance Insertion Loss ~ 0.25dB Isolation ~ 40dB

RFMD HEMT GaN SiC

Abstract: Gan hemt transistor RFMD LDMOS 90W
Contextual Info: RF3933D RF3933D90 W GaN on SiC Power Amplifier Die 90W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz RF IN VG Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged

Contextual Info: RFSW2100 45W GaN-onSiC Reflective SPDT RF Switch RFSW2100 Proposed 45W GaN-ON-SiC REFLECTIVE SPDT RF SWITCH Package: QFN, 12-Pin, 3mm x 3mm Features  Broadband Operation 30MHz to 6GHz  Advanced GaN HEMT Technology  2GHz Typical Performance  Insertion Loss <0.4dB

93420

Abstract: cgh40045f CGH40045 30579 74139 10UF 33UF 002132 FERRITE-220 transistor 15478
Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

2.45 Ghz power amplifier 45 dbm

Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

str w 6554 a

Abstract: STR 6554 a
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

cgh40120F

Abstract: CAP 0805 ATC 600F 154-04 CGH4012 CGH40120F-TB 095.91 cgh401 CGH40120
Contextual Info: CGH40120F 120 W, RF Power GaN HEMT Cree’s CGH40120F is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

CGH40180PP

Abstract: CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor transistor k 3562 atc600f cgh401 smd transistor s2p
Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

Cree Microwave

Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

CGH40090PP

Abstract: 10UF CGH4009 CGH40090PP-TB JESD22 transistor 702 F smd
Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

CGH40180PP

Abstract: ATC600F cgh40180 Cree Microwave CGH4018 CGH40180PP-TB JESD22 L30 type RF microwave power transistor cgh401 1623
Contextual Info: CGH40180PP 180 W, RF Power GaN HEMT Cree’s CGH40180PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40180PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

CGH40090PP

Abstract: CGH40090PP-TB Cree Microwave JESD22 10UF CGH4009 hemt .s2p
Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

TRANSISTOR SMD 9014

Abstract: 9014 SMD CGH40090PP CGH40090PP-TB 9014 transistor smd Cree Microwave LK 10 0112 64 10UF CGH4009 RO4350B
Contextual Info: CGH40090PP 90 W, RF Power GaN HEMT Cree’s CGH40090PP is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40090PP, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high

Contextual Info: PRELIMINARY CGH40045 45 W, RF Power GaN HEMT Cree’s CGH40045 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40045, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

CGH40010

Abstract: CGH40010F 10UF 470PF CGH40010-TB
Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

str 8656

Abstract: str g 8656 str 6353 CGH40010 str 6308 8627 8656 STR A 6169 10UF 470PF
Contextual Info: PRELIMINARY CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

CGH40010F

Abstract: str w 6554 a CGH40015F CGH40010 Large Signal Model transistor s2p str w 6554 CGH40015 str 6554 CGH40010 JESD22
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer

CGH40010F

Abstract: str w 6554 CGH40010 CGH40010 Large Signal Model CGH40010-TB str w 6554 a transistor RF S-parameters str f 6554 STR 6554 a CGH40010P
Contextual Info: CGH40010 10 W, RF Power GaN HEMT Cree’s CGH40010 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer