RF 1090MHZ Search Results

MG1007-42

Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
Contextual Info: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are

1090Mhz LNA

Abstract: GSM LNA AN797 GSM ic REP027 gsm amplifier schematic APP797 MAX2338 measurement rf gsm
Contextual Info: Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: lnas, low noice amplifiers, mixer, rf, rfic, cdma, gsm, wireless, rf ics, front end ic Sep 07, 2001 APPLICATION NOTE 797 MAX2338 LNAs and Downconverters Optimized for GSM Front-End REP027 Abstract: The MAX2338 front-end IC is tuned to support GSM and DCS operation at 942MHz and 1842MHz. A

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH+ Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm 10.5 LO = +20dBm 9.5 LO = +21dBm Conversion Loss dB 10.0 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH+ Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 LO = +20dBm 10.0 LO = +21dBm 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz

HJK-20VH

Abstract: TFK+BPW+84 diode+T2D+84
Contextual Info: Frequency Mixer HJK-20VH Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 10.0 LO = +20dBm 9.5 LO = +21dBm 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH Typical Performance Curves Conversion Loss @ IF=85MHz 11.0 LO = +19dBm Conversion Loss dB 10.5 LO = +20dBm 10.0 LO = +21dBm 9.5 9.0 8.5 8.0 7.5 7.0 6.5 6.0 400 620 840 1060 1280 1500 1720 1940 2160 2380 2600 RF Frequency (MHz) Conversion Loss vs. IF @ RF=1520MHz

Contextual Info: 1090MHz SAW Filter 10MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBT109002 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package �

1090mhz

Abstract: JESD22-A114 PRA1000
Contextual Info: PRELIMINARY Long & Short Pulse 960-1215Mz 1025-1150MHz 1030-1090MHz PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: Sym Value Unit

HV1011-1000L

Contextual Info: DESCRIPTION PACKAGE The high power HV1011-1000L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed avionics applications operating over the frequency range of 1030 MHZ to 1090MHz. FEATURES High Power Gain Excellent Ruggedness

HVV1011-600

Abstract: hvvi 1090MHZ
Contextual Info: HVV1011-600 Preliminary Datasheet L-Band High Power Pulsed Transistor 50µs Pulse Width, 2% Duty Cycle For 1030-1090MHz IFF/TPR/TCAS Applications DESCRIPTION PACKAGE The high power HVV1011-600 device is a high voltage silicon enhancement mode RF transistor

1030-1090MHz

Abstract: 4884 SM200 DS01A
Contextual Info: HVV1011-035 L-Band High Power Pulsed Transistor 1030-1090MHz, 50µs, 5% Duty For TCAS and Mode-S Applications DESCRIPTION PACKAGE The high power HVV1011-035 device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

Contextual Info: PLL350-1120Y PLL3501120Y5V NARROWBAND PHASELOCKED LOOP 5V NARROWBAND PHASE-LOCKED LOOP Package: PLL350, 20.32mm x 14.78mm x 3.91mm PLL Synthesizer Block Diagram Features  Low Phase Noise / Fast Settling Time Reference In Data, Clock, Enable, LD RF Feedback

HJK-20VH

Abstract: 22851 24251
Contextual Info: Frequency Mixer HJK-20VH+ Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1

AM1011-400

Contextual Info: AM1011-400 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 15:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 400 W MIN. WITH 8.0 dB GAIN

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH+ Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1

1090mhz oscillator

Contextual Info: PLL350-1120Y PLL3501120Y5V NARROWBAND PHASELOCKED LOOP 5V NARROWBAND PHASE-LOCKED LOOP Package: PLL350, 20.32mm x 14.78mm x 3.91mm PLL Synthesizer Block Diagram Features    Low Phase Noise / Fast Settling Time RF Feedback SPI Bus Compatible PLL IC

AM1011-500

Abstract: M198
Contextual Info: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION

AM1011-075

Contextual Info: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN

AM1011-500

Abstract: M198
Contextual Info: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION

HJK-20VH

Abstract: 3139 147 13251
Contextual Info: Frequency Mixer HJK-20VH Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1

AM1011-500

Abstract: M198 SGS-THOMSON 435
Contextual Info: AM1011-500 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . POUT = 500 W MIN. WITH 8.5 dB MIN. GAIN 10:1 LOAD VSWR CAPABILITY @ 10µS., 1% DUTY SIXPAC HERMETIC METAL/CERAMIC PACKAGE EMITTER SITE BALLASTED OVERLAY GEOMETRY REFRACTORY/GOLD METALLIZATION

AM1011-075

Contextual Info: AM1011-075 RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS . . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 10:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 75 W MIN. WITH 9.2 dB GAIN

HJK-20VH

Contextual Info: Frequency Mixer HJK-20VH Typical Performance Data RF IN (MHz) 400.1 460.1 520.1 580.1 640.1 700.1 760.1 820.1 880.1 940.1 1000.1 1060.1 1120.1 1180.1 1240.1 1300.1 1360.1 1420.1 1480.1 1540.1 1600.1 1660.1 1720.1 1780.1 1840.1 1900.1 1940.1 2000.1 2040.1