REVERS CHARACTERISTIC Search Results
REVERS CHARACTERISTIC Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SMCJ85CAContextual Info: SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 440 Volts 1500 Watt Peak Pulse Power SMCJ PART NUMBER UNI- POLAR BI-POLAR REVERS DEVICE REVERS BREAKDOW BREAKDOW MAXIMUN PEAK E TEST MARKING E STANDN VOLTAGE N VOLTAGE CLAMPING PULSE LEAKAGE |
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Contextual Info: SMCJ 1500W Series SMCJ SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE - 5.0 TO 440 Volts 1500 Watt Peak Pulse Power . " * " 标注为常用型号 " * " Stand for commonly used models SMCJ PART NUMBER UNI- POLAR BI-POLAR REVERS REVERS |
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Contextual Info: UNCONTROLLED DOCUMENT REV, A B PART NUMBER REV. SSP — LX61 44A3SC B E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #11073. E.C.N. #11102. ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMETER MIN TYP PEAK WAVELENGTH REVERS[ VOLTAGE ' 7 ,6 0 2,5 0 1 ] lf= 120mA |
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44A3SC 120mA 120mA 590nm | |
Contextual Info: N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor T 553N Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak and revers e voltages |
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T1503NContextual Info: N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor T1503N Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak and revers e voltages |
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T1503N T1503N | |
5KP10A
Abstract: 5KP10CA 5KP11A 5KP11CA 5KP12A 5KP12CA 5KP13A 5KP13CA 5KP14A 5KP14CA
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20x20mm) 50mVp-p 5KP10A 5KP10CA 5KP11A 5KP11CA 5KP12A 5KP12CA 5KP13A 5KP13CA 5KP14A 5KP14CA | |
T4003NHContextual Info: N Datenblatt / Data sheet Netz-Thyristor Phase Control Thyristor T4003NH Elektrisch e Eig enschaften / Electrical properties Höchstzul ässige Werte / M aximum rated val ues Periodische Rüc kwärts-Spitzensperrspannung Kenndaten repetiti ve peak and revers e voltages |
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T4003NH T4003NH | |
Contextual Info: Schottky Barrier Diodes SBD MA21D38 Silicon epitaxial planar type For high frequency rectification For protection revers current of DC/DC converter Unit: mm 1.25±0.10 0.58+0.02 –0.03 0.60±0.10 • Features 5° 1.90±0.10 ■ Absolute Maximum Ratings Ta = 25°C |
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MA21D38 | |
Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. SML-LX1 5YC-TR 3.00 [0.118] RÛ.35 [ R 0.014] 3 PLS.5 P O L A R IT Y MARK 3.00 [0.118] 3 1 ELECTRO-OPTICAL CHARACTERISTICS Ta = 25'C \ Y PARAMETER PEAK WAVELENGTH MIN FORWARD VOLTAGE 2,00 [0.079] REVERS[ VOLTAGE AXIAL INTENSITY |
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10OfjA | |
1N4948
Abstract: Fast recovery rectifiers TL 4948
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1N4942 1N4948 150oC 175oC MIL-STD-202E 1N4948 Fast recovery rectifiers TL 4948 | |
Contextual Info: Packag ed LEDS/PCB Mount Indicators FEATURES • T-1% right angle P C B mount LED • Diffused lens • Stackable end to end Standard LEDs • Multiple color com binations available MAXIMUM RATINGS Ta = 25°C POWER REVERSÉ FORWARD CURRENT*!,) VOLTAGE (V*) DISSIPATION (P^ |
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TA2264-YG MTA4064-G MTA4064-Y TA4064 00006CH | |
Contextual Info: 1N60P Small Signal Schottky Diodes VOLTAGE RANGE: 45 V CURRENT: 0.1 A Features fffff DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics |
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1N60P DO--35 30MHz | |
1N60PContextual Info: BL GALAXY ELECTRICAL 1N60P VOLTAGE RANGE: 45 V CURRENT: 0.1 A SMALL SIGNAL SCHOTTKY DIODES FEATURES DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,Low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics |
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1N60P DO--35 1N60P | |
1n60Contextual Info: 1N60 Small Signal Schottky Diodes VOLTAGE RANGE: 40V CURRENT: 0.03 A Features DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics |
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DO--35 30MHz 1n60 | |
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DL04-28Contextual Info: D L O 4 ~ 1 2 8 tentative - Absolute Maximum rating ITEM SYMBOL V rm Prsm Off-state voltage Surge on-state Power I RSM Peak Surge Revers Current Junction Temperature Storage Temperature VALUES UNITS 23 V 400 10 W Non-repetitive 1 0/1000 p. S Tj T stg 2 Electrical Characteristics |
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DL04-28 DL04-28 | |
1N60
Abstract: diode 1n60 Diode Equivalent 1N60 1n60 al JA-1400
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DO--35 1N60 diode 1n60 Diode Equivalent 1N60 1n60 al JA-1400 | |
DL03-58Contextual Info: D L 0 3 — 5 8 tentative 1 Absolute Maximum rating SYMBOL ITEM CONDITIONS VALUES UNITS 45 V 300 \v Off-state voltage V rm Surge on-state Power P rsm Peak Surge Revers Current I rsm 4 A Junction Temperature Tj T stg 150 X; Storage Temperature ) ' Jtlectrical Characteristics |
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DL03-58 DL03-58 | |
Contextual Info: N E C ELECTRONICS INC S^C TENTATIVE DATA SHEET D b4E755S 0005520 5 NECE DC-PBH LD, MODULE 1.3pm WITH ISOLATOR ( P D (E32-803-C98U9-0A00) 8 S | | July 1963 T - i H ‘ù 7 FILE COPY DO NOT REMOVE ABSOLUT MAXIMUM RATING (Ta=25°C) Revers Voltage VR Forward Current |
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b4E755S E32-803-C98U9-0A00) | |
Contextual Info: BL GALAXY ELECTRICAL 1N 6 0 VOLTAGE RANGE: 40V CURRENT: 0.03 A SMALL SIGNAL SCHOTTKY DIODE FEATURES DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics |
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DO--35 | |
Contextual Info: Diodes SMD Type Silicon RF Switching Diodes BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR |
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BAR81 | |
TL 4946
Abstract: 4946 TL 4948 1N4948 1N4942 4947 revers characteristic
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1N4942 1N4948 150oC 175oC MIL-STD-202E TL 4946 4946 TL 4948 1N4948 4947 revers characteristic | |
DL04-18Contextual Info: D L O 4 — 1 8 tentative 1 Absolute Maximum rating SYMBOL ITEM Off-state voltage V rm Surge oh-state Power P r sm Peak Surge Revers Current I Junction Temperature Storage Temperature CONDITIONS VALUES 13 Non-repetitive 1 0/1000 ¡i S RSM Tj T sig UNITS |
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DL04-18 D0050Ã DL04-18 | |
Contextual Info: Product specification BAR81 Unit: mm Features Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss A bsolute M axim um R atings T a = 25 S ym bol V alue U nit D iode revers e voltage P aram eter VR 30 V F orw ard c urrent |
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BAR81 | |
dialight 521-9901
Abstract: 521-9901
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