RETENTI Search Results

ru 94v0

Abstract: ru 94v-0
Contextual Info: Catalog 130/767 Issued 11-99 Top Load Battery Connector Features: • Accepts all CR2032 lithium ion batteries ■ Self-ejecting design allow s battery to be removed with­ out tools IfHp ■ Superior retention to pc board or to battery ■ Cost effective

UM614256

Abstract: HC 3102
Contextual Info: UM614256 Seríes 2 5 6 K X 4 , 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply 3.3V I/O compatible All inputs and outputs directly TTL com patible Comm on I/O using three-state output Data retention voltage: 3V min. Available in 28-pin SOJ package

Contextual Info: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles

Contextual Info: Electronics Standard Edge II Card Edge Connectors Solder Type Board-to-Board Connectors .100 [2.54] Centerline Vertical Solder Posts, Retention Feature, Without Mounting Ears M a te ria l and F in is h : .064 [1.63] Sq. X .130 [3.301 Dp. — Intercontact Key Slot

Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

UNITRODE

Contextual Info: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles

Contextual Info: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility

Contextual Info: MSP430F42x0 MIXED SIGNAL MICROCONTROLLER SLAS455C − MARCH 2005 − REVISED AUGUST 2005 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D Active Mode: 250 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA

Contextual Info: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy

Contextual Info: Advance Information CAT25C256 256K-Bit SPI Serial CMOS E2PROM FEATURES • 100,000 Program/Erase Cycles ■ 5 MHz SPI Compatible ■ 100 Year Data Retention ■ 1.8 to 6.0 Volt Operation ■ Self-Timed Write Cycle ■ Hardware and Software Protection ■ 8-Pin DIP/SOIC and 20-Pin TSSOP

CTJ-6-06-1306-BK-PX

Contextual Info: 1 2 3 4 5 6 7 8 9 A A B B C C SPECIFICATIONS Voltage Rating: Current Rating: Contact Res.: Insulation Res.: Housing: Contacts: Mating/Unmating : Retention: Durability: Operating Temp.: D E Series CTJ Modular phone jack Recommended PCB Layout F Positions X

KTH-1000

Abstract: KTH-5017 KTH-2325 KTH-2025 KTH-5003 VDM230 KTH-2276 KTH-2258 KTH-5001 VPM2000TS
Contextual Info: 2065 Series Product Benefits BNC Connectors Full crimp design Designed for analog & digital cables Field Installable Meets or exceeds HDTV standards Mechanical Durability: Center Contact Retention: Coupling Mechanism: Force to Engage/Disengage: Interface Dimension:

fm25v05-g

Abstract: FM25V05 fm25v05g
Contextual Info: FM25V05 512Kb Serial 3V F-RAM Memory Features 512K bit Ferroelectric Nonvolatile RAM • Organized as 65,536 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process

NTE65101

Contextual Info: NTE65101 Integrated Circuit 256 x 4–Bit Static Random Access Memory SRAM Description: The NTE65101 is a CMOS 1024–bit device organized in 256 words by 4 bits in a 22–Lead DIP type package. This device offers ultra low power and fully static operation with a single 5V supply. Separate data inputs and data outputs permit maximum flexibility in bus–oriented systems. Data retention

c8051f902

Abstract: C8051F912 smbc 134DET mux88 C8051F32 C8051F912-GM cp1h 188SM C8051F90
Contextual Info: C8051F91x-C8051F90x Single/Dual Battery, 0.9–3.6 V, 16–8 kB, SmaRTClock, 12/10-Bit ADC MCU Ultra-Low Power - 160 uA/MHz in active mode 24.5 MHz clock - 2 us wake-up time (two-cell mode) - 10 nA sleep mode with memory retention; - 50 nA sleep mode with brownout detector

MSP430

Abstract: cc cg1 100 278
Contextual Info: MSP430FG42x0 MIXED SIGNAL MICROCONTROLLER SLAS556A − JULY 2007 − REVISED AUGUST 2007 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D Active Mode: 250 A at 1 MHz, 2.2 V Standby Mode: 1.1 μA Off Mode RAM Retention : 0.1 μA

MR25H10

Abstract: MR25H10C M25H1 MR25H10CDC M25H10 MR25H10M mr25h10mdc MR25H10CDCR MO-229 DFN 10 socket
Contextual Info: MR25H10 FEATURES 1Mb Serial SPI MRAM • No write delays • Unlimited write endurance • Data retention greater than 20 years • Automatic data protection on power loss • Fast, simple SPI interface with up to 40 MHz clock rate • 2.7 to 3.6 Volt power supply range

S1219

Abstract: MSP430 SD16INCTL SLAS629A
Contextual Info: MSP430F47x MIXED SIGNAL MICROCONTROLLER SLAS629A - MARCH 2009 - REVISED APRIL 2009 D Low Supply Voltage Range, 1.8 V to 3.6 V D Ultralow Power Consumption: Active Mode: 262 µA at 1 MHz, 2.2 V Standby Mode: 1.1 µA Off Mode RAM Retention : 0.1 µA D Five Power-Saving Modes

SPA02

Abstract: SPA04B SPA06 SPA08B SPA10
Contextual Info: SPA Series Single In-line Package Switches Features/Benefits • Thin Single In-line Packaging saves • • • PCB space Retention feature holds part to PCB prior to soldering Available in vertical or right angle models High pressure contact system does not require tape sealing

bq4010

Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
Contextual Info: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During

100-PIN

Abstract: ADC12 MSP430 MSP430F4618IPZ
Contextual Info: MSP430x461x1, MSP430x461x MIXED SIGNAL MICROCONTROLLER SLAS675 − OCTOBER 2009 D Low Supply Voltage Range: 1.8 V to 3.6 V D Ultralow-Power Consumption: D D D D D D D D D D D D − Active Mode: 400 µA at 1 MHz, 2.2 V − Standby Mode: 1.3 µA − Off Mode RAM Retention : 0.22 µA

XM28C010P

Contextual Info: XM28C010P 1 Megabit Puma Module 32K x 32 Bit High Speed 5 Volt Byte Alterable Nonvolatile Memory Array • High Reliability —Endurance: 100,000 Cycles —Data Retention: 100 Years FEATURES • High Speed, High Density Memory Module —150ns, 120ns, 90ns and 70ns Access Times

ICS5311

Abstract: ICODE SLI-S
Contextual Info: NXP ICODE SLI-SY HF RFID smart label IC When long-term data integrity and tailored security counts National archives, university libraries and museums need an identification solution that will last for decades. Offering a guaranteed 40 years data retention, NXPs’ ICODE SLI-SY answers