REPLACEMENT FOR 2N2905 Search Results

mps6514 replacement

Abstract: replacement BC107 bsx45 replacement BC109C replacement 2n2222a REPLACEMENT pxt2907 smd replacement of 2N3053 2n2905A replacement 2n2222a smd P2T2907
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483

replacement BC107

Abstract: 2N4124 bc548 BC109C replacement bcy71 replacement 2n3053 replacement 2n2222a REPLACEMENT 2N4126 bc548 2n3019 equivalent BC109C datasheet 2n4125 equivalent
Contextual Info: Philips Semiconductors Replacement list Selection guide REPLACEMENT/WITHDRAWAL TYPES The following type numbers were in the previous issue of this data handbook, but not in the current version: TYPE NUMBER REASON FOR DELETION 2N2297 Replaced by 2N3019 2N2483

st178

Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
Contextual Info: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment

BC107 equivalent transistors

Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued

2n3019 replacement

Abstract: BC237 MV209 diode mps2907 replacement 2n3819 replacement K 2056 transistor 6-SOT-23 marking 27 OF transistor 2N2222 to-92
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechnaical tuning methods. * Motorola Preferred Devices

2n3819 replacement

Abstract: transistor TO-92 bc108 mps2907 replacement BC237 BC109C replacement BF245 bf245 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV409LT1 MV409 Silicon Tuning Diodes These devices are designed for general frequency control and tuning applications. They provide solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Devices

2n3819 replacement

Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device

2n3819 replacement

Abstract: BC237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV105GLT1 This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods.

j305 replacement

Abstract: BC237 mps2907 replacement BC109C replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

LT530

Abstract: replacement for 2n2905 2n2905 replacement LT581 LT581JH LT1019 LT1021 LT1031 LT580JH LT580KH
Contextual Info: / X _ LT580/LT581 TECHNOLOGY Precision References im m FCRTUACS DCSCRIPTIOn • Direct Replacement for Present References ■ Ultra Low Drift— 3ppm/°C Typ. ■ Curvature Corrected ■ Series or Shunt Operation ■ Ultra High Line Rejection « Vi ppm/V

2n3819 replacement

Abstract: transistor equivalent book 2N5401 BC237 MPS918 equivalent mps2907 replacement 2n3819 equivalent transistor bf245 replacement 2N5551 SOT-23 transistor equivalent CT 2n5551 j305 replacement
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid–state reliability in replacement of mechanical

LT1019

Abstract: LM168 MC1400 MC1404 REF-01 REF-02 AD581 LT1019-5 AD580 lt1019amh
Contextual Info: LT1019 Precision Reference U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Available at 2.5V, 4.5V, 5V, and 10V Plug-In Replacement for Present References Ultra-Low Drift: 3ppm/°C Typical Curvature Corrected Series or Shunt Operation Ultra-High Line Rejection: ≈0.5ppm/V

Contextual Info: r r im _ LT1019 ü TECHNOLOGY Precision Reference F€ flTU R€ S D € S C ftlP T IO n • Available at 2.5V, 4.5V, 5V, and 10V ■ Plug-In Replacement for Present References ■ Ultra-Low Drift: 3ppm/°C Typical ■ Curvature Corrected ■ Series or Shunt Operation

2SC103

Abstract: MJE3055T equivalent bd139 3v BU108 2N3055 blocking bd139 equivalent transistor TR TIP3055 BDX54 mje13003 equivalent 50W AMP 2SD718 2SB688
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13002* MJE13003*  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Transistors *Motorola Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power switching

bd139 3v

Abstract: transistor bc 647 50W AMP 2SD718 2SB688 BD679 coil 2N6122 transistor TRANSISTOR REPLACEMENT GUIDE TIP41 TRANSISTOR REPLACEMENT 2N5684 circuit diagrams BD138 coil 724 motorola NPN Transistor with heat pad
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13009*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V

BD140 application circuits circuits

Abstract: equivalent 2n6488 2N6044 equivalent BU108 bd139 3v 2N3055 blocking TR TIP2955 st mje13005 2N3713 MOTOROLA TIP2955 DATA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE13005*  Data Sheet *Motorola Preferred Device Designer's SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

C502 Zener diode

Abstract: vr301 potentiometer VR501 F101 Type T fuse TRANSISTOR C309 4518BE VR502 vr302 potentiometer 2sc1015-GR 2SC1015GR
Contextual Info: ^ SERVICING INFORMATION B X PRECISION* M O D E L 3011A 3011B FUNCTION GENERATOR PARTS LIST SCHEMATIC SYMBOL DESCRIPTION B+K PRECISION PART NUMBER RESISTORS Unlisted resistors are +5%, 1/4 W. See Schematic for value. R101, 102 R104 R105 R205 R206 R207 R208

Contextual Info: Precision, Low Noise FGA Voltage References ISL21007 Features The ISL21007 FGA™ voltage references are extremely low power, high precision, and low noise voltage references fabricated on Intersil’s proprietary Floating Gate Analog technology. The ISL21007 features very low noise 4.5µVP-P for

Contextual Info: Precision, Low Noise FGA Voltage References ISL21007 Features The ISL21007 FGA™ voltage references are extremely low power, high precision, and low noise voltage references fabricated on Intersil’s proprietary Floating Gate Analog technology. The ISL21007 features very low noise 4.5µVP-P for

2N16

Abstract: BC237 BCY72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.

2n2222 h 331 transistors

Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.

BC237

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10