RELIABILITY TESTING FOR PHOTO DIODE Search Results

LORIN

Abstract: 3P3T switch high voltage diode high voltage diodes normal radar circuit PECVD mesa diode
Contextual Info: Development of a High Voltage mmW GaAs PIN Diode Switch David Hoag, Daniel Curcio and Timothy Boles M/A-COM: Tyco Electronics, 43 South Ave, Burlington, MA 01803 USA Phone: 781-564-3330, email: hoagd@tycoelectronics.com  2001 GaAs Mantech ABSTRACT The initial development of a three pole three throw,

construction of photo diode

Abstract: GaAs array, 850nm 850nm Receivers reliability testing for photo diode
Contextual Info: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

2um ir photodiode

Abstract: construction of photo diode GaAs 10Gbps photodiode chip photo diode array MXP7A01 GaAs array, 850nm Photo Modules IR PHOTO DIODE amplifier
Contextual Info: MXP7A01 – 1x4 Array 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

construction of photo diode

Abstract: photo diode array amplifier MXP7A02 GaAs array, 850nm IR PHOTO DIODE amplifier 207UM
Contextual Info: MXP7A02 – 1x4 Array 3.125 Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks

Contextual Info: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel

PIN photodiode 850nm

Abstract: MXP7000 MXP7001
Contextual Info: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel

construction of photo diode

Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Contextual Info: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel

Contextual Info: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

PIN PHOTO DIODE

Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

MXP4000

Abstract: PIN PHOTO DIODE construction of photo diode
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4003 – 10 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

construction of photo diode

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

MXP4002

Abstract: PHOTO diode
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

construction of photo diode

Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

1550nm catv receiver

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Contextual Info: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

DIODE ED 16

Abstract: ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth

Darlington pair IC

Abstract: Darlington pair IC high current darlington pair power transistor schmitt trigger IC
Contextual Info: IS652A IS653A MATCHED EMITTER DETECTOR PAIR PHOTO DARLINGTON OUTPUT ISOCOM PACKAGES LTD CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS652A IS653A 2.84 0.45 DESCRIPTION The IS652A Gallium Arsenide Infrared Emitting Diode and the IS653A(NPN Silicon Photo Darlington

Contextual Info: IS650A IS651A MATCHED EMITTER DETECTOR PAIR PHOTO TRANSISTOR OUTPUT PACKAGES CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS650A IS651A 2.84 0.45 DESCRIPTION The IS650A Gallium Arsenide Infrared Emitting Diode and the IS651A(NPN Silicon Photo Transistor) are

Contextual Info: IS650A IS651A MATCHED EMITTER DETECTOR PAIR PHOTO TRANSISTOR OUTPUT ISOCOM PACKAGES LTD CIRCUIT 4.0 mm 1-2 4.4 2.7 5.75 2 2 1 1 1.27 4.06 3.0 mm 25.0 2.0 IS650A IS651A 2.84 0.45 DESCRIPTION The IS650A Gallium Arsenide Infrared Emitting Diode and the IS651A(NPN Silicon Photo Transistor) are