MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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mxp4000mxp400x1310nm1550nm+6mxp400100e-12mxp4002mxp4003laser diode 10mw 1550nmconstruction of photo diode
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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mxp4001mxp400x1310nm1550nm+700e-11mxp400000e-12construction of photo diodemxp4002mxp4003photo diode
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1550nm photo diode for 10Gbps
Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
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mxp4005mxp400x12ghz1310nm+91550nm1430nm1550nm photo diode for 10gbpsconstruction of photo diode1550nm catv receivermxp4003ir photo diode amplifier1550nm optical device1550nm 10mw photo diode
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MXP400X
Abstract: 7400 family bonder 150-degree
Contextual Info: Application Note - MXP400x Wire bond InGaAs/InP PIN Photo Diode Family OPTO-ELECTRONIC PRODUCTS W W W. Microsemi .COM Guideline for wire bond to MXP400x bare die. Recommend Wedge Bond used. Wedge detail informations: * 45 degee wire feed angle. * .0015 in. hole size.
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mxp400x400-15a-32-347400 familybonder+1150-degree
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1550nm photo diode for 10Gbps
Abstract: MXP4003 MXP4005
Contextual Info: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. . The MXP400X series of photo diodes are currently offered in die
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mxp4005mxp400x12ghz1550nm+4508um1430nm1550nm photo diode for 10gbpsmxp4003
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1550nm photo diode for 10Gbps
Contextual Info: Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the
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mxp40051310nm1550nmmxp400x+21430nm1550nm photo diode for 10gbps
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Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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mxp4001mxp4000mxp400x00e-11+400e-12mxp4002mxp400300e-13
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Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise
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mxp40001310nm1550nmmxp400x+200e-1100e-12
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construction of photo diode
Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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mxp4002mxp4000mxp400x00e-11+5mxp400100e-12mxp4003construction of photo diodephoto diode
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construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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mxp4001mxp4000mxp400x00e-11+700e-12mxp4002mxp400300e-13construction of photo diodeir photo diode amplifier1550nm 10mw photo diode
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DIODE ED
Abstract: DIODE ED 11 ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Extremely Low Dark Current Extremely Low Capacitance
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mxp4001508um1310nm1550nm+7mxp400x00e-11mxp4000mxp4002diode eddiode ed 11ed 08 diode
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diode ed 85
Abstract: DIODE ED 11 1430nm ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package
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mxp4000508um1310nm1550nm+8mxp400x00e-11mxp4001mxp4002diode ed 85diode ed 111430nmed 08 diode
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subwoofer 1000 watts amplifier
Abstract: 12v subwoofer amp circuits 500w mosfet based pulse width modulation inverter high subwoofer 1000 watts amplifier LX1585 lx1691 350w power amplifier stereo subwoofer pcb 1722 12v class d amplifier 40W high subwoofer 100 watts amplifier
Contextual Info: VOLUME New product guide Subwoofer Center Channel 11 Left Front LX1722 Right Front The LX1721 / LX1722 is a high performance Class-D stereo controller IC targeted for high efficiency audio requirements. Ideal for battery powered products, portable systems or space
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lx1722lx1721subwoofer 1000 watts amplifier12v subwoofer amp circuits+8500w mosfet based pulse width modulation inverterhigh subwoofer 1000 watts amplifierlx1585lx1691350w power amplifier stereosubwoofer pcb 172212v class d amplifier 40whigh subwoofer 100 watts amplifier
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Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
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mxp4002mxp4000mxp400x00e-11+3mxp400100e-12mxp4003
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