MXP4002 Search Results

MXP4002

Abstract: PHOTO diode
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

PIN PHOTO DIODE

Abstract: "Photo Diode" photo diode construction of photo diode MXP4002 IR PHOTO DIODE amplifier MXP4000
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP4000 series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

construction of photo diode

Abstract: MXP4001 MXP4003 MXP4000 MXP4002 PHOTO diode
Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCT SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

DIODE ED 16

Abstract: ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4002 – 2.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth

MXP4000

Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

construction of photo diode

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.

Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

Contextual Info: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise

PIN Photodiode 1550nm

Abstract: photodiode 1550nm bandwidth PIN Photodiode 1550nm Photodiode 1550nm bandwidth photodiode responsivity 1550nm 2 InGaAs Photodiode 1550nm InGaas PIN photodiode chip optical amplifier 1550nm rise time PIN photodiode ps photodiode responsivity 1550nm, 1 photodiode PIN 1550nm bandwidth
Contextual Info: PRELIMINARY MXP4000 Series InGaAs/InP PIN Photodiode Chips OPTO ELECTRONIC PRODUCTS P RODUCT P REVIEW DESCRIPTION The four devices offered feature excellent dark current ratings of 1-3 nA, and a breakdown voltage of 20 Volts with the bandwidth options for

construction of photo diode

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Contextual Info: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively

diode ed 85

Abstract: DIODE ED 11 1430nm ED 08 diode
Contextual Info: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION ƒ ƒ ƒ ƒ ƒ High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package

1550nm catv receiver

Abstract: MXP4000 MXP4001 MXP4002 MXP4003 1430nm
Contextual Info: MXP4003 – 12.5 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively