Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    RD16HHF1 APPLICATION NOTES Search Results

    RD16HHF1 APPLICATION NOTES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PEF24628EV1X
    		Rochester Electronics LLC PEF24628 - SOCRATES Four-channel SHDSL EFM system-on-chip PDF
    143-4162-11H
    		Amphenol Communications Solutions Paladin RPO, DC, 4-Pair, 6 Column, APP PDF
    143-6282-11H
    		Amphenol Communications Solutions Paladin RPO, DC, 6-Pair, 8 Column, APP PDF
    144-411E-11H
    		Amphenol Communications Solutions Paladin RPO, DO, 4-Pair, 12 Column, 1.5mm Wipe, APP PDF
    144-812C-21H
    		Amphenol Communications Solutions Paladin RPO, DO, 8-Pair, 8 Column, 2.25mm Wipe, APP PDF

    RD16HHF1 APPLICATION NOTES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RD16HHF1

    Abstract: RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF
    Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz RD16HHF1 30MHz RD16HHeater RD16HHF1 application notes RD16HHF1-101 mosfet HF amplifier transistor d 1680 RD16HHF PDF

    RD16HHF1 application notes

    Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-1or RD16HHF1 application notes RD16HHF RD16HHF1-101 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE PDF

    RD16HHF1

    Abstract: RD16HHF RD16HHF1 application notes RD16HHF1-101 RD16H PO-20W
    Contextual Info: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz RD16HHF1 30MHz RD16HHF1-101 Oct2011 RD16HHF RD16HHF1 application notes RD16H PO-20W PDF

    rd16hhf1

    Abstract: RD16HHF1 application notes Rd16hhf
    Contextual Info: < Silicon RF Power MOS FET Discrete > RD16HHF1 Silicon MOSFET Power Transistor 30MHz,16W OUTLINE DESCRIPTION 12.3MIN Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 2 9+/-0.4 High power gain: 3.6+/-0.2 4.8MAX FEATURES 3.2+/-0.4 designed for HF RF power amplifiers applications.


    Original     		RD16HHF1 30MHz 30MHz RD16HHF1 RD16HHF1 application notes Rd16hhf PDF

    RD100HHF1

    Abstract: RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1
    Contextual Info: SiRF Device Family for RF Power Amplification General Catalog Better Performance For Radio Communication Network Professional Mobile Radio Marine Radio Telematics AMPS/GSM Features Full Line up Frequency : 30-900MHz Output Power : 0.3-100W Operation Voltage : 7.2-12.5V


    Original     		30-900MHz H-CR624-E KI-0612 RD100HHF1 RD70HVF1 rd16hhf1 RD15HVF1 RD06HVF1 RD16HHF1 application notes RD70HVF RD70HHF1 RD01MUS2 RD06HHF1 PDF