RCP1 Search Results

Contextual Info: Shielded PIN Type RCP1317 DIMENSIONS mm WIRE 外形寸法図 Max. 17.5 4.8 ø0.7 øMax. 13.5 線種 5.0 CONSTRUCTION 磁気構造図 ( 33µH - 4.7mH ) RCR1616 DIMENSIONS (mm) WIRE 外形寸法図 Max. 16.5 5.0 ø0.8 øMax. 16.5 線種 7.5 CONSTRUCTION ( 4.7µH - 1.0mH )

Contextual Info: RCP135 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP133B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RCP111A

Contextual Info: RCP111A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP111D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350ö V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP113D Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350ö V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP115 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP131B Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

RCP1317NP-122L

Abstract: RCP1317 RCP1317NP-121L RCP1317NP-151L RCP1317NP-181L RCP1317NP-221L RCP1317NP-472L
Contextual Info: POWER INDUCTORS < Pin Type: RCP Series > Type: RCP1317 ◆ Product Description ・13.5mm Max.φ, 17.5mm Max.height. ・Inductance range :33 H～4.7mH. ・Rated Current Range: 0.37～3.6A. ◆ Feature ・Magnetically shielded construction. ・Ideally Used in Printers, LCD TV, Copy Machine, Mainboard of the compounding machines,

Contextual Info: RCP117 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

sfernice RCP12

Abstract: RCP12
Contextual Info: Data sheet E 5/3.368 - 10497 2 W and 4 W at 25°C NF C 83-210 power metal oxide film resistors ROP SPECIFICATIONS Table 2 SFERNICE SERIES ROP2 ROP4 CCTU 04-06A N FC/UTE 83-210 RCP12 RCP13 SFERNICE Pr at 25°C 2W 4W NF C Pr at 70°C 1,5 W 3W out of nominal ohmic range

RCP1317NP-470M

Contextual Info: PIN Power Inductor RCP1317 Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 13.5 13.5 17.5mm Max. • Product weight: 8.9 g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × × × Environmental Data

Contextual Info: RCP137 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP10F Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current900m V(RRM)(V) Rep.Pk.Rev. Voltage10k t(rr) Max.(s) Rev.Rec. Time300n @I(F) (A) (Test Condition)500m @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)8.0

RCP10N50

Contextual Info: RCP10N50 Transistors N-Channel IGBT V BR CES (V)500 V(BR)GES (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)65 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.

Contextual Info: RCP10N40A Transistors N-Channel IGBT V BR CES (V)400 V(BR)GES (V)20 I(C) Max. (A)5 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.08 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.

TA9687

Abstract: RCP10N40 rch10n40 TA9438 TA943 ta968 RCP10N35 RCP10 RCH10N35 l50uH
Contextual Info: 3 8 7 5 08 1 G E “SOLID STATëTdÏ W 3û7SDfil 001Ô4S7 □ Ï " d 7^. 3 ?_// l l l l b 10 RCH10N35, RCH10N40, RCP10N35, RCP10N40 File N um ber 1697 Power Devices S C H E M A T IC SY M B O L N-Öhannel Enhancement Mode Conductivity-Modulated Power Field-Effect Transistors COMFETs

Contextual Info: POWER INDUCTORS < Pin Type > ø12 series RCH1216B DIMENSIONS mm Max. 16.0 5.0 5.0 ø0.7 Max. ø12.5 CONSTRUCTION CONNECTION 4 1 4 1 3 2 3 2 ( 10µH - 47µH ) ( 10µH - 2.2mH ) ( 56µH - 2.2mH ) BOTTOM VIEW 4.0 ø13 series RCP1317 DIMENSIONS (mm) Max.17.5

RCP10N40

Contextual Info: RCP10N40 Transistors N-Channel IGBT V BR CES (V)400 V(BR)GES (V)20 I(C) Max. (A)5 Absolute Max. Power Diss. (W)60 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case2.08 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.

Contextual Info: RCP113A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ö V(BR)CBO (V) I(C) Max. (A)150m Absolute Max. Power Diss. (W)6.2 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: PIN Power Inductor RCP1317 Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 13.5 13.5 17.5mm Max. • Product weight: 8.9 g Ref. • Moisture Sensitivity Level: 1 • RoHS compliance. RoHS x × × × Environmental Data

Contextual Info: RCP133C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: RCP15 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)50 V(RRM)(V) Rep.Pk.Rev. Voltage15k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.50 V(FM) Max.(V) Forward Voltage21 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)25

Contextual Info: RCP131C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300ö V(BR)CBO (V) I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)