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406A
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Allen-Bradley
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Cermet Resistor Networks, SIP |
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HSS3406A
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Huashuo Semiconductor
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N-Ch 30V Fast Switching MOSFET with 3.6A continuous drain current, 30 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and SOT23 package for high cell density power switching applications. |
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JMSH0406AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V N-channel Power MOSFET in TO-252-3L package with 5.0 mΩ typical RDS(ON) at 10V VGS, 73A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSL0406AK
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Jiangsu JieJie Microelectronics Co Ltd
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40 V N-channel Power MOSFET in TO-252-3L package with 4.5 mΩ typical RDS(ON) at 10 V VGS, 73 A continuous drain current, and low gate charge for power management applications. |
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NCE3406AN
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NCEPOWER
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NCE3406AN is a 30V, 6A N-channel enhancement mode power MOSFET with low RDS(ON) of less than 55mΩ at VGS=2.5V, suitable for battery protection and switching applications in a surface mount SOT23-6L package. |
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JMSH0406AGDQ
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Jiangsu JieJie Microelectronics Co Ltd
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40V dual N-channel power MOSFET with 5.2 mΩ typical RDS(ON) at VGS = 10V, 68A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications in a PDFN5x6-8L-D package. |
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JMSL0406AP
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Jiangsu JieJie Microelectronics Co Ltd
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40V N-channel Power MOSFET in SOP-8L package with 4.8 mΩ typical RDS(ON) at 10V VGS, 17.8A continuous drain current, low gate charge, and 100% UIS tested for power management and switching applications. |
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ESJA54-06A
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SUNMATE electronic Co., LTD
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High voltage rectifier diode ESJA54-06A with 6.0 kV repetitive peak reverse voltage, 5.0 mA average output current, high surge resistance, fast switching, and operating junction temperature up to 125°C. |
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JMTP4406A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 13A N-channel Enhancement Mode Power MOSFET in SOP-8 package with RDS(ON) less than 9.6mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. |
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JMSL0406AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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40 V N-Ch Power MOSFET in TO-252-3L package with 4.7 mΩ RDS(ON) at VGS = 10V, 78 A continuous drain current, low gate charge, and AEC-Q101 qualified for automotive applications. |
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JMSH0406AK
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Jiangsu JieJie Microelectronics Co Ltd
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40 V N-channel Power MOSFET in TO-252-3L package with 5.0 mΩ RDS(ON) at 10 V VGS, 70 A continuous drain current, and low gate charge for power management and switching applications. |
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JMSH0406AG
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Jiangsu JieJie Microelectronics Co Ltd
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40V N-channel Power MOSFET with 4.1 mΩ typical RDS(ON) at 10V VGS, 86A continuous drain current, PDFN5x6-8L package, suitable for power management and switching applications. |
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JMSH0406AU
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Jiangsu JieJie Microelectronics Co Ltd
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40V 58A N-channel Power MOSFET in PDFN3x3-8L package with 4.3 mΩ RDS(ON) at 10V VGS, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
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JMTL3406A
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Jiangsu JieJie Microelectronics Co Ltd
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30V, 4A, 39mΩ N-channel Power Trench MOSFET in SOT-23 package with low gate charge and excellent RDS(ON), suitable for load switch, PWM, and power management applications. |
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JMSH0406AGD
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Jiangsu JieJie Microelectronics Co Ltd
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40V dual N-channel power MOSFET in PDFN5x6-8L-D package with 5.2 mΩ typical RDS(ON) at 10V VGS, 64A continuous drain current, low gate charge, and 100% UIS tested, suitable for power management and switching applications. |
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CJQ4406A
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JCET Group
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N-Channel Power MOSFET in SOP8 package, 30V drain-source voltage, 10A continuous drain current, with low on-resistance of 8.3mΩ at 10V gate-source voltage, suitable for low-side switching applications. |
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HSS3406A
