RCA POWER TRANSISTOR Search Results

2n3773 power Amplifier circuit diagrams

Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Contextual Info: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete

tic 1260 scr texas

Abstract: TA7265 2N6874 ta7719 2N6058 RCA 40408 transistor 2N2405 bd643 BD647 equivalent 2N3228
Contextual Info: RCA Bipolar Power Devices Table of Contents This DATABOOK contains detailed technical information on the full line of more than 750 RCA bipolar power devices consisting of: power transistors, SURGECTORs, ultra-fast-recovery rectifiers, power hybrid circuits, SCRs, and triacs.

2N4933

Abstract: RCA-2N4933 2N4932 VK200 INDUCTOR choke vk200 inductor vk200 transistor 200A 24V RCA transistors rca 249 VK200 FERRITE
Contextual Info: File No. 249 RF P o w e r T ra n s is to r s 2N4932 2N4933 Solid State Division RCA-2N4932* and RCA-2N4933* are epitaxial silicon n-p-n planar transistors of the “ overlay” emitter elec­ trode construction. They are especially intended to pro­ vide high power as class C rf amplifiers for International

Contextual Info: HARRIS SEMICOND SECTOR 57E I> • 4302271 G G 2 G 4 eì2 ^ ■ HAS Power T ran sisto RCA 1000, RCA1001 File Number 594 T-33'-2cC 8-A m pere Silicon N -P -N Darlington Pow er Transistors

transistor tl 188

Abstract: 92CS-27516
Contextual Info: BUX11A High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor TERMINAL DESIGNATIONS c £ Features: • I / c eo 1353 File N um ber FLANGE _ -190 V 92CS-27516 m l c - 20 A ■ Pt - 200 W JEDEC TO-204AA POWER TRANSISTORS The RCA-BUX11A epitaxial-base silicon n-p-n transistor

RCA-2N5179

Abstract: 2n5179 equivalent TA7319 2N5179 solid state 2n5179 2n5179 rca npn UHF transistor 2N5179 2N517 TIC 2460 rca transistor
Contextual Info: File No. 288 RF Power Tran sisto rs Solid State Division 2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as

Contextual Info: HARRIS SEMICOND SECTOR 4DE D B 4302271 GÜ33747 FRK9460D OBJECTIVE HARRIS • RCA • BE • 4 •HAS 10A, -500V RDS on =1,20n INTERSIL This Objective Data Sheet Represents the Proposed Device Performance. Radiation-Hardened P-Channel Power MOSFET TO-204AE

Contextual Info: C fO < ^ / g CMOS Low-Power Monostable/Astable Multivibrator The RCA-CD4047A consists of a gatable astable m ultivibrator w ith logic techniques incorporated to permit positive or negative edge-triggered monostable m ultivibrator action w ith retriggering and external count­

c04069

Abstract: ican-6466 RCA-C04069UB cd4069ub 60b6 C04049 I16C04069 schematic diagram pulse shaping cd4069u V/RCA CD4069UB
Contextual Info: CD4069UB Types COS/MOS Hex Inverter High-Voltage Types 20-Volt Rating The RCA-C04069UB types consist of six COS/MaS inverter circuits_ These devices are intended for all general-purpose inverter applications where' the medium-power TTLdrive and logic-level-conversion capabilities

723ct

Abstract: A723E CI CA723 CA723CE CA723 harris intersil
Contextual Info: Power Control Circuits HARRIS S E M I C O N D U C T O R HARRIS RCA - GE CA723, CA723C INTERSIL May 1990 Voltage Regulators For Regulated Output Voltage Adjustable from 2 V to 37 V at Output Currents up to 150 mA without External Pass Transistors Features:

12ds7

Abstract: rca transistor tube 12DS7 Scans-0017276
Contextual Info: 12DS7 TWIN DIODE-POW ER TETRODE 9-Pin Miniature Type For Use in "Hybrid" Automobile Receivers Operating Directly From 12-Volt Storage Batteries TENTATIVE RCA-I2DS7 is a multiunit miniature type perveance power t e t r o d e type in one "hybrid" containing

C04-013

Abstract: 74ls10 IC CMOS 4000B series rca 74 HC Series ICs C04013
Contextual Info: Application Notes Power Consumption in QMOS Logic Circuits by R. Funk and B. Heinze QMOS, RCA’s high-speed CMOS-logic technology, offers users the best features of both CMOS and TTL tech nolog ies: the low-power consumption of CMOS and the fast speeds associated with LSTTL. This Application Note focuses on

BDY58R

Abstract: RCA-BDY58R
Contextual Info: BDY58R File Number Silicon N-P-N Switching Transistors 1206 TERM INAL DESIGNATIONS c E FLANGE! For Switching Applications in Industrial and Commercial Equipment Features: • VCE0 - 160V • lc — 25 A ■ P T — 175 W JEDEC TO-204AA The RCA-BDY58R is a silicon n-p-n power transistor featur­

CA3102E

Abstract: CA3049T RCA CA3049T ca3049
Contextual Info: D ifferential Am plifiers HARRIS S E M I C O N D U C T O R HARRIS RCA GE - CA3049, CA3102 INTERSIL May 1990 Dual High-Frequency Differential Amplifiers For Low-Power Applications at Frequencies up to 5 0 0 MHz Features: Applications: • Power Gain 23 dB typ. at 200 MHz

RCA-40967

Abstract: 40967 40968 ATC100 596 transistor 2575A rca 832
Contextual Info: File No. 596 RF Pow er T ra n sis to rs 40967 40968 Solid State Division 2 -W and 6 -W 4 7 0 - MHz Silicon N -P -N Overlay Transistors For UHF Amplifier Service T - Features-. • A ll devices tested at in fin ite VSWR w ith rated power inpu t RCA H F -44 PA C K AG E

IRF640R

Abstract: IRF641R free energy transis Harris MOSFET N-CHANNEL nh
Contextual Info: HARRIS SEMICOND SECTOR IbE D • H3DSS71 D01S4Ö2 3 ■ fSi HARRIS Power MOSFETs S E M I C O N D U C T O R HARRI S RCA GE T-3^/3 I NTERSI L IRF640R, IRF641R IRF642R, IRF643R Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V, 150V rDs on = 0 .1 8 0 and 0.22fi

2N3839

Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Contextual Info: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the

CD40114

Abstract: 74C89 CD40114B
Contextual Info: RCA CMOS LSI Products CD40114B Preliminary Data COS/MOS 64-Bit Random Access Memory High-Voltage Types 20 -V o lt Rating Features: • ■ ■ ■ ■ ■ ■ ■ • ■ Input address latch 3-state outputs Low-power T T L compatible Equivalent to and pin-compatible vMth National 74C89

PJ 1309

Abstract: CD40181B
Contextual Info: HARRIS SEMICOND SECTOR 37E ï> 4302271 3875081 G E SOLID STATE 1 0021321 O 1E 1 35 07 IHAS D T - </?-/ CD40181B Types CMOS 4-Bit Arithmetic Logic Unit High-Voltage Types (20-Volt Rating The RCA-CD40181B is a low-power four-bit parallel arithmetic logic unit (A L U ) capable

CA3262E

Abstract: CA3219A CA3242 CA3252 CA3262 CA3262AE CA3262AQ ca3219 Scans-002898
Contextual Info: UN fH HARRIS Linear Integrated Circuits S E M I C O N D U C T O R RCA HARRIS GE INTERSIL CA3262E C A 3262A Q *, C A 3262A E * M ay 1990 Quad-Gated Inverting Power Driver For Interfacing Low-Level Logic to High C urrent Loads Features: 16-Lead D ual-ln-Llne

Difference between LS, HC, HCT devices

Abstract: TRANSISTOR A120M Difference between LS, HC, HCT, H 74 HC Series ICs Hct cable
Contextual Info: Application Notes Replacing LSTTL with Q M O S High-Speed Logic IC s by J. Nadolski Until the development of RCA HC and HCT high-speedCMOS logic ICs, high-speed logic devices were available only in the high-power-consuming bipolar technology. The HC/HC T QMOS fam ily features LSTTL speed a lo n g with

equivalent M 393

Contextual Info: HARRIS V p 11 SEMCONt SECTOR 4DE D m 2N7285R, 2N7285H HARRIS S E M I C O N D U C T O R RCA H AR RIS GE MB02271 DD337b2 0 EiHAS REGISTRATION PENDING Available As FRM240R, FRM240H IN T E R S IL 3 16A,200V RDS(on =0.24n Radiation-Hardened N-Channel Power MOSFETs

Contextual Info: D e | 3Ö750Ö1 D0133AS fi 01E 13385 D 7~ - ¥ 5 - 0 7 G E SOLI» STATE D I 3875081 G E SOLID STATE CD4527B Types CMOS BCD Rate Multiplier Features: • Oascadable in multiples o f 4-bits High-Voltage Types 20-Volt Rating The RCA-CD4527B is a low-power 4-bit digi­

Contextual Info: Arrays ffl H A R R IS S E M I C O N D U C T O R RCA GE CA3127 INTERSIL May 1990 High-Frequency N -P -N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz F e a tu re s : A pplications: G am -b an d w id th p ro d u c t f j > 1 GHz