rbv-406m
Abstract: RBV406H RBV 402 RBV-401 RBV-406 RBV-402 RBV-404 RBV-406H RBV-408 RBV-40C
Contextual Info: Bridge Diodes Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. * RBV-401 100 RBV-402 200 RBV-404 400 RBV-406 600 RBV-408 800 RBV-40C 1000 I F (AV) (A) Tj (ºC) Tstg (ºC) 50Hz Half-cycle Sinewave Single Shot With Heatsink
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rbv-401rbv-406hrbv-406mrbv-40c+6rbv-408rbv-406rbv-404rbv-402rbv406hrbv 402
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2x062h
Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
Contextual Info: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1
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zmm22zmm24zmm27zmm43+11zmm472x062hgk1051ss216gk104smd transistors w06d20sb80smd marking 5asd25sb80lrb706f-40t1g2x062
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FMPG2F
Abstract: marking RBV - 401 3f series surface mount transistor FMXA-2202S RBV-406M SJPM-H4 FMV-3HU DIODE diode eu02 rectifier rbv-606 marking RBV
Contextual Info: Diodes 4 ○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○○ Taping Specifications . 176 Application Note . 179
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rbv-60rbv-40fmpg2fmarking rbv - 401+83f series surface mount transistorfmxa-2202srbv-406msjpm-h4fmv-3hu diodediode eu02rectifier rbv-606marking rbv
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tci 604
Abstract: RBV-2506 AM01 EM01 FMM-24S FMM-34S RBV-404 RBV-604 SFPM-54 SFPM-64
Contextual Info: Rectifier Diodes Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot Ta (°C) 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 SFPM-74 1.0 50 –40 to +150 1.0 1.0 10 50 150 20 0.072 AM01 1.0 35
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sfpm-54rbv-4086htci 604rbv-2506+7am01em01fmm-24sfmm-34srbv-404rbv-604sfpm-64
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diode 8603
Abstract: SOT23 1Z FMV-3HU RM2C RN4Z General FBT UX-F5B 3gu diode diode RBV-406M Part marking
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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vr-60ssvr-61ssdiode 8603sot23 1z+8fmv-3hurm2crn4zgeneral fbtux-f5b3gu diodediode rbv-406mpart marking
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RM1Z 12
Abstract: rectifier rbv-606 RBV-1506 AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50
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rm1z 12rectifier rbv-606rbv-1506am01a+6em01afmm-26sfmm-36srbv-406rbv-406hrbv-406m
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fn651
Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102
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2sa7442sa7452sa7462sa747+162sa7642sa7652sa7682sa7692sa7702sa771fn651ctb-34d2sc5586hvr-1x7str20012sap17n2sd2619rbv-4156bsla40372sk1343
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RBA-401
Abstract: RBA402 RBA-402 LB-156 RBV-602 RBA401 RBV-406 RBV404 lb156 FMM-36S
Contextual Info: RECTIFIER DIODES CENTER-TAP TÏPE MICROWAVE OVEN DIODES Absolute Maximum Ratings Type No. V rm lo I f sm (V) (A) with Fin (A) FMM-22S.R 200 FMM-24S.R 400 FMM-26S.R 600 FMM-31S.R 100 FMM-32S.R 200 FMM-34S.R 400 FMM-36S.R 600 Absolute Maximum Ratings Elee. Char, at 25°C
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fmm-22sfmm-24sfmm-26sfmm-31s+15fmm-32sfmm-34sfmm-36srb-150rb-151rb-152rba-401rba402rba-402lb-156rbv-602rba401rbv-406rbv404lb156
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B 2306 BARRIER RECTIFIER
Abstract: diode RU 3B FMQ2FU RBV-406 UX-F5B w 2206 schottky fmv -30j EZ0150 fmu 22 u FMP-3FU
Contextual Info: Diodes 4-1 Rectifier Diodes . 40 4-1-1 1 Chip . 40 4-1-2 2 Chip . 41
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vr-60ssvr-61ssb 2306 barrier rectifierdiode ru 3b+8fmq2furbv-406ux-f5bw 2206 schottkyfmv -30jez0150fmu 22 ufmp-3fu
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SK 18752
Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 (May, 2008) SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,
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Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)
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ag01aag01yag01zfmb-29+6fmb-29lfmb-32el02zsfpb-66sfpb-69sfpb-72
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UX-F5B
Abstract: UX-F5B diode RG-2A Diode shv-30j FMQ2FU axial package fmp2fur
Contextual Info: Selection Guide Rectifier Diodes ●1 in one-package VRM V 100 IF (A) I FSM (A) 1.0 45 3.0 200 0.9 30 45 35 1.0 45 45 200 50 1.2 100 80 1.5 120 3.0 200 0.9 30 45 50 1.0 35 45 45 400 50 80 1.2 150 100 80 2.5 150 3.0 200 35 1.0 45 45 50 80 600 150 1.2 100
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o-220frz1030rz1040rz1055+11rz1065rz1100rz1125rz1150ux-f5bux-f5b dioderg-2a diodeshv-30jfmq2fuaxial packagefmp2fur
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SE012
Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
Contextual Info: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa1386a2sa1488se012se090se140nse115ndiode2sc5487sta474a8050ese110nsla-7611
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RBV-1506
Abstract: AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4086H RBV-4106M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50
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d3sb10 60
Abstract: D3SB10 D3SB60 D3SB20 D3SB40 D3SB80 RBV401G RBV402G RBV404G RBV406G
Contextual Info: LESHAN RADIO COMPANY, LTD. RBV401G – RBV407G D3SB10 – D3SB80 4.0A 4.0A BRIDGE RECTIFIERS MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Single phase,half wave, 60Hz,resistive or inductive load. For capacitive load,derate current by 20%.
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SD MOSFET DRIVE DATASHEET 4468 8 PIN
Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话:81-3-3986-6164 传真:81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720
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o03cc0room3202h1-o03cc0-1008031nmsd mosfet drive datasheet 4468 8 pin+9sk 18752ctx12sfgt31318752 sankensla6805mfn651sla6101sk 18751str20012
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shindengen mr5060
Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A
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5ka105ka10a5ka115ka11a+165ka125ka12a5ka135ka13a5ka155ka15ashindengen mr5060tfk 601tfk 60218db6a18db8a18db2aphilips bzv85c-22 data sheetbzx85c motorolabyd74gur1m
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diode RBV-406M
Abstract: DIODE rbv 602 Diode rbv-408
Contextual Info: 4-1 Rectifier Diodes VRM V IF (AV) (A) Package Axial Values in parentheses are for the products (Body Diameter/Lead Diameter) with heatsinks Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H)
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triac zd 607
Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes
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the32-246622h1-o03ea0-0510020nmtriac zd 607transistor c5586+8bridge rectifier sanken rb40rb40 bridge rectifierrb60 bridge rectifierzd 607 - triacctpg2fctx12stoshiba transistor c4468sta524a
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RBV-404 bridge rectifier
Abstract: RBV-150C RBV-401 RBV-404 RBV-406M RBV-408 RBV-40C
Contextual Info: Rectifier Diodes Package I F AV (A) Part Number IFSM (A) 50Hz ( ) is with Half-cycle Sinewave Single Shot Heatsink Axial 1000 Tstg (°C) IR (µA) VF (V) max IF (A) IR (H) (µA) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) 0.8 40 –40 to +150
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RBV-406M
Abstract: AM01Z EM01Z FMM-22S FMM-32S RBV-401 RBV-402 RBV-4102 RBV-602 SFPM-52
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150
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D3SB60
Abstract: d3sb10 60 D3SB10 rbv406g D3SB100 D3SB20 D3SB40 D3SB80 E231047 RBV401G
Contextual Info: LESHAN RADIO COMPANY , LTD. D3SB10 RBV401G Thru D3SB100(RBV410G) FEATURES .Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 .This series is UL listed under the Recognized Component index,file number E231047 .Single-in-line package
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EM1C
Abstract: AM01 EM01 RBV-408 RBV-608
Contextual Info: Rectifier Diodes is with Half-cycle Sinewave Heatsink Single Shot VR = VRM max Rth (j- ) Rth (j-c) (°C/W) Mass (g) Fig. No. 0.8 40 –40 to +150 1.2 1.0 5 50 100 15 0.4 49 1.0 35 –40 to +150 0.97 1.0 20 100 100 17 0.3 48 EM 2B 1.2 80 –40 to +150 0.92
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SE135N
Abstract: SE110N UX-C2B SE140N STR83159 SE130N STR2012 Transistor AC 51 SE140 SE115N
Contextual Info: Type No. Type Type No. Type Index Type No. Order 57 Index (Type No. Order) Type No. Type 2SA1186 2SA1215 Transistors for Audio Amplifier (LAPT) 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 2SA1493 2SA1494 2SA1567 2SA1568 2SA1667 2SA1668
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2sa11862sa12152sa12162sa1262+162sa12942sa12952sa13032sa13862sa14882sa1492se135nse110nux-c2bse140nstr83159se130nstr2012transistor ac 51se140se115n
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