EM1C Search Results

em1c

Contextual Info: EM1B ~ EM1C SILICON RECTIFIER DIODES PRV : 800 ~ 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 25.4 MIN. 0.107 (2.7)

Contextual Info: SANKEN ELECTRIC CO., LTD. EM1C １ Scope The present specifications shall apply to an EM1C. ２ Outline Type Silicon Diode Structure Resin Molded Applications Commercial Frequency Rectification ３ Flammability UL94V-0 Equivalent ４ Absolute maximum ratings

Contextual Info: EM1C SILICON RECTIFIER DIODE DO - 41 PRV : 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2)

EM1YZ

Abstract: EM1C em1a
Contextual Info: BL GALAXY ELECTRICAL PLASTIC SILICON RECTIFIER EM1Y Z -EM1C(Z) VOLTAGE RANGE: 100 - 1000 V CURRENT: 1.0 A FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol

EM1C

Contextual Info: EM1Y-EM1C Plastic Silicon Rectifiers VOLTAGE RANGE: 100 - 1000 V CURRENT: 1.0 A DO - 41 Features Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol and similar solvents The plastic material carries U/L recognition 94V-0

Contextual Info: SIYU R EM1Z/EM1/EM1A/EM1B/EM1C 塑封普通整流二极管 General Purpose Plastic Rectifier 反向电压 200 - 1000V 正向电流 1.0A Reverse Voltage 200 to 1000 V Forward Current 1.0 A 特征 Features DO-41 ・低的反向漏电流 Low reverse leakage

EM1C

Contextual Info: SIYU R EM1Z/EM1/EM1A/EM1B/EM1C 塑封普通整流二极管 General Purpose Plastic Rectifier 反向电压 200 - 1000V 正向电流 1.0A Reverse Voltage 200 to 1000 V Forward Current 1.0 A 特征 Features DO-41 •低的反向漏电流 Low reverse leakage

TL 555c

Abstract: ym 3009 ic 4043B pes 5003 p type iii 16T MARKING 40 pin J004 4027B equivalent CD 40138 dax wax red 4013B
Contextual Info: MIL-M-38510/51E -MIL-M-38510/51D 22 Ja n u a ry 1980 M ILITARY SPEC IFIC A T IO N M IC RO CIRCU ITS, D IG IT A L , CMOS, FL IP - F L O P S AND LATCHES, MONOLITHIC SILIC O N T h is s p e c i f i c a t i o n 1s approved f o r use by a l l D e p a rt­ ments

Contextual Info: TMS320F28377D, TMS320F28376D www.ti.com SPRS880 – DECEMBER 2013 TMS320F2837xD Dual-Core Delfino Microcontrollers Check for Samples: TMS320F28377D, TMS320F28376D 1 TMS320F2837xD Dual-Core Delfino MCUs 1.1 Features • Dual-Core Architecture – Two TMS320C28x™ 32-Bit CPUs

EM01Z

Abstract: FMM-22S FMM-32S RBV-402 RBV-4102 RBV-602 SFPM-52 SFPM-62 AM01 AM01Z
Contextual Info: Rectifier Diodes 50Hz is with Half-cycle Sinewave Heatsink Single Shot Fig. No. 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 AM01Z 1.0 35 –40 to +150 0.98 1.0 10 50 100 22 0.13 EM01Z 1.0 45 –40 to +150

AM01

Abstract: EM01 FMM-24S FMM-34S RBV-404 RBV-604 SFPM-54 SFPM-64 SFPM-74
Contextual Info: Rectifier Diodes Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot Ta (°C) 30 –40 to +150 1.0 1.0 10 50 100 20 0.072 1.0 45 –40 to +150 0.98 1.0 10 50 100 20 0.072 SFPM-74 1.0 50 –40 to +150 1.0 1.0 10 50 150 20 0.072 AM01 1.0 35

Contextual Info: Product Folder Sample & Buy Technical Documents Tools & Software Support & Community TMS320F28377D, TMS320F28376D, TMS320F28375D, TMS320F28374D SPRS880A – DECEMBER 2013 – REVISED MARCH 2014 TMS320F2837xD Dual-Core Delfino Microcontrollers 1 Device Overview

Contextual Info: LE AVAILAB MG3500/MG2580 HD H.264 CODEC DATA SHEET Advance Information July 23, 2010 Document Release 1.4 Document Number: PN1100 Functional Diagrams Pin Configurations appear at end of data sheet. Functional Diagrams continued at end of data sheet. UCSP is a trademark of Maxim Integrated Products, Inc.

AM01

Abstract: EM01 FMM-31S RBV-401 RBV-601 bridge 45
Contextual Info: Rectifier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Axial Center-tap 100 Bridge Tj (°C) IR (H) (µA) IR (µA) Tstg (°C) VF (V) max IF (A) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c)

Z80 dart

Abstract: Z8400AB1 HALL EFFECT 21l Z8400 4mhz Z80A dart Z8470AB1 Z84COO Z8470 z8400a simple door alarm circuit diagram
Contextual Info: Z80 MICROPROCESSOR FAMILY 1th EDITION JANUARY 1990 USE IN LIFE SUPPORT DEVICES FOR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF SGS-THOMSON

RBV-1506

Abstract: AM01A EM01A FMM-26S FMM-36S RBV-406 RBV-406H RBV-406M RBV-4086H RBV-4106M
Contextual Info: Rectifier Diodes Rth j- Rth (j-c) (°C/W) Mass (g) 1.0 1.0 1.0 1.0 1.2 1.5 1.5 1.5 1.5 2.5 3.0 3.5 5.0 10 2.0 2.0 2.0 3.0 3.0 4.0 5.0 6.5 7.5 7.5 7.5 12.5 10 10 10 5 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 50 50 50 50 50 50 50 50 50

FMPG2F

Abstract: zener diode reference guide diode MARKING 30J MICROWAVE OVEN HIGH VOLTAGE RECTIFIER DIODE - HVR diode hvr 1x FMB-34M sot23 3F mark fmlg12 RBV SOT23 marking code RBV SOT23
Contextual Info: Bulletin No. D01ED0 Oct., 2000 SI LICON DIODES SILICON VARISTORS CAUTION / WARNING The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in

RBV-1506

Abstract: AM01A EM01A FMM-26S FMM-36S RBV-1306 RBV-1506S RBV-406 RBV-406H RBV-406M
Contextual Info: 49 0.4 0.6 600 1.0 Center-tap 50 1.2 2.1 50 5.5 51 4.05 Bridge 51 6.45 • External Dimensions 2.9±0.1 50.0±1.0 7.2±0.2 100 22 0.13 50 100 20 0.2 1.0 45 –40 to +150 0.97 1.0 10 50 100 17 0.3 1.0 50 –40 to +150 0.95 1.0 5 50 100 15 0.4 1.2 80 –40 to +150

FMM-32S

Abstract: AM01 AM01Z EM01Z FMM-22S RBV-402 RBV-4102 RBV-602 SFPM-52 SFPM-62
Contextual Info: Mass g Fig. No. VRM (V) Package Part Number 200V IFSM (A) I F (AV) (A) 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Tj (°C) Tstg (°C) IR (H) (µA) IR (µA) VF (V) max IF (A) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass

shindengen mr5060

Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

Contextual Info: 4-1 Rectifier Diodes ●Surface-Mount V RM V 200 400 IF (AV) (A) Values in parentheses are for the products with heatsinks Package Part Number IFSM (A) 50Hz Single Half Sine Wave Tj (°C) T stg (°C) VF (V) max IF (A) IR (µA) V R=VRM max IR(H) (µA) VR=V RM

EM1C

Abstract: AM01 EM01 FMM-31S RBV-401 RBV-601
Contextual Info: Rectifier Diodes Package Part Number IFSM A 50Hz ( ) is with Half-cycle Sinewave Heatsink Single Shot Axial 100 I F (AV) (A) Bridge IR (µA) IR (H) (µA) Tstg (°C) VF (V) max IF (A) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g)

EM1C

Abstract: AM01 EM01 RBV-150C RBV-40C
Contextual Info: Rectifier Diodes Package I F AV (A) Part Number IFSM (A) 50Hz ( ) is with Half-cycle Sinewave Single Shot Heatsink Axial 1000 Tstg (°C) IR (µA) VF (V) max IF (A) IR (H) (µA) VR = VRM max VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) 0.8 40 –40 to +150

ARC processor ISA ERET register

Abstract: RC32438 79RC32438 DL1210 uart specification IDT CV 184 0x111d pcim 2014 be561 16MX8X4 ddr
Contextual Info: IDT Interprise™ 79RC32438 Integrated Communications Processor User Reference Manual November 2002 2975 Stender Way, Santa Clara, California 95054 Telephone: 800 345-7015 • TWX: 910-338-2070 • FAX: (408) 330-1748 Printed in U.S.A. 2002 Integrated Device Technology, Inc.