RBA 72 Search Results

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA72 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA72 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M SDRAM: mPD4516421 are assembled.

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Abstract: dba1 MAKING A10 BGA QFP100-P-1420-0 MS82V16520
Contextual Info: E2L1056-39-72 ¡ Semiconductor MS82V16520 ¡ Semiconductor This version: Jul. 1999 MS82V16520 Previous version: Sep. 1998 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32

BL-4C

Abstract: actb 10-VCC-0 QFP100-P-1420-0 Cas23
Contextual Info: J2L1056-39-72 作成：1999年 7月 MS82V16520 l 前回作成：1998年 9月 ¡ 電子デバイス MS82V16520 262,144-Wordx32-Bit×2-Bank SYNCHRONOUS GRAPHICS RAM n 概要 MS82V16520は256Kワード×32ビット×2バンクのシンクロナスグラフィックスRAMです。

Contextual Info: 30E D m 7^5^537 003113? 2 m SGS-THOMSON 0 g[H }(gm iO T (Q K S S G 2 N 2857 S-THOMSON VHF/UHF AMPLIFIERS DESCRIPTION The 2N2857 is a silicon planar epitaxial NPN tran­ sistors in Jedec TO-72 metal case, intended for am­ plifier, oscillator and converter applications up to

rba 016

Abstract: dba1 VG3617161BT
Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

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Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

PD48

Abstract: uPD481850GF-A12-JBT
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD481850 8M-bit Synchronous GRAM Description The µPD481850 is a synchronous graphics memory SGRAM organized as 128 K words x 32 bits × 2 banks random access port. This device can operate up to 100 MHz by using synchronous interface. Also, it has 8-column Block Write

dba1

Abstract: VG3617161DT
Contextual Info: VIS VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

BA1T12

Abstract: BA1T11 BA2T13 ba6t17 PD4516161G5 A10 7JF PD4516821G5 PD4516161 1994P PD4516421G5
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4516421, 4516821, 4516161 16M-bit Synchronous DRAM Description The µPD4516421, 4516821, 4516161 are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152x4×2, 1,048,576×8×2 and 524,288×16×2 word×bit×bank , respectively.

MS82V16520

Abstract: QFP100-P-1420-0
Contextual Info: FEDS82V16520-05 ¡ Semiconductor MS82V16520 This version: Mar. 2001 Previous version: Feb. 2000 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32

dba1

Abstract: MSM54V25632A MSM54V25632A-10 MSM54V25632A-12 QFP100-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

dba1

Abstract: VG3617161DT
Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: VIS VG3617161BT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161BT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: VG3617161ET
Contextual Info: VG3617161ET 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161ET is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

rba 72

Abstract: 84fo ba 555 58RB 429s dyz-h
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Contextual Info: VIS Preliminary VG3617161DT 16Mb CMOS Synchronous Dynamic RAM Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

dba1

Abstract: MS82V16520 QFP100-P-1420-0
Contextual Info: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.

dba1

Abstract: MS82V16520 QFP100-P-1420-0 CBB, CBC
Contextual Info: Pr E2L0056-18-32 el im y 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32 bits ¥ 2 banks. This device can operate up to 125 MHz by using synchronous interface. In addition, it has 8-column

M5562

Abstract: RBA 5C BC 529 GOK584450 gk 27b 5A64
Contextual Info: 53@, .?>:8:>6@2 <27.B 3GDQROGP y Cnj[dZ[Z j[cf2 hWd][ kf je 569 y 5 Dehc ? - 5 Dehc A YedjWYj WhhWd][c[dj y 62<cc MA j[hc_dWbi y NeFO - CHR Yecfb_Wdj >TNIEDJ .NNJIEDQIMLP F[WZb_]^j Yedjheb0 Dk[b fkcf Yedjheb0 Fehd Yedjheb0 ?3A Yecfh[iieh YbkjY^ 05.<.0>2<6=>60=

Contextual Info: Pr E2L0056-28-91 el im y 262,144-Word ¥ 32-Bit ¥ 2-Bank Synchronous Graphics RAM DESCRIPTION The MS82V16520 is a synchronous graphics random access memory organized as 256 K words ¥ 32 bits ¥ 2 banks. This device can operate up to 166 MHz by using synchronous interface. In addition, it has 8-column

uPD4504161

Abstract: upd4504161g5
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.

UPD4504161

Abstract: PD4504161 upd4504161g5
Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4504161 4M-bit Synchronous DRAM Description The µPD4504161 is a high-speed 4,194,304-bit synchronous dynamic random-access memory, organized as 131,072 x 16 × 2 word × bit × bank , respectively. The synchronous DRAM achieves high-speed data transfer using the pipeline architecture.