RB601 Search Results

Ao6100

Contextual Info: SAN KEN E L E C T R IC CO L T » 35 E Ultra Fast Recovery Diodes 1 H h T IR O T M l .0 0 0 0 4 1 3 T B S A K J T p & J -o V Vrm: 70~1000V B io :0.4~5.0A '¿7' SFPL/AG/AL/EG/EL/RG/RL Rating/ Characteristics Absolute Maximum Ratings V rsm V) V rm (V) If s M

Contextual Info: Data Sheet Fast recovery diodes RF601B2D Dimensions Unit : mm Land size figure (Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 3.0 1.6 2.0 6.0 Applications General rectification 3)Very fast recovery 4)Low switching loss Structure

CTG-22S

Abstract: CTG-34S CTG-32S CTG-33S CTG23S smew CTG-11S CTG-12R CTG-12S CTG-14R
Contextual Info: SANKEN ELECTRIC C« LTH iS 3SE B Ultra Fast Recovery Diodes _ 7 ^ _ S A K J T~Zt~07 7 ^ 0 7 4 1 GODGfll? b V r m:70~ 400V e i o : 5.0~ 20A BESSES CTG V rm V CTG-12S CTG-12R CTG-14S CTG-14R CTG-21S CTG-21R CTG-22S CTG-22R CTG-23S CTG-23R CTG-24S CTG-24R CTG-31S

RBA-406B

Abstract: CI 3060 elsys CTUG3D AM01 AU02 EM01 EU02A FMU12S FMU-12S rb40 RECTIFIER
Contextual Info: SANKEN ELECTRIC CO LTD 3SE 5 Schottky Barrier Diodes m 7 ^ 0 7 4 1 0000fl21 «= ^ S A K J ^ ; £ | : g | E3Vrm: 3 0 — 9 0 V E lo : 0 .7 ~ 3 0 A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 A K 03 A K 04 A K 06 A K 09

fn651

Abstract: CTB-34D 2SC5586 hvr-1x7 STR20012 sap17n 2sd2619 RBV-4156B SLA4037 2sk1343
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.8.20 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

FMLG12

Abstract: rb60 RECTIFIER RB40 EU2A SANKEN EU2 RH2F CTB34 sanken s-100 78/rb60 RECTIFIER
Contextual Info: 7^0741 3SE » SA NK EN E L E C T R I C CO LTD QOOGflOS ü E S A K J 7 2 0 3 -OI eVrm: 100~ 1500V E lo:0.5~ l . 2A Fast Recovery Diodes RH/ES/RS/RH/RU/EU io A V rm (V) Ti CC) 5 0 H z H a lf S in e W ave S in g l e P uts T yp e N o \ 250 RH 1 450 400 RH 1A

R8715F

Abstract: RD7M RB435 SE163 RB111 RB-601 RB110C T100 RB4200
Contextual Info: Schottky Barrier Diodes lo=1A to 0.1 A, single or array, low V f, or low leakage. •F o r Rectifier Absolute maximum ratings Ta ” 25*C Vhm (V) Vr (V) Mio (A) &RB035B-40 40 40 R8031B-40 40 40 r RB160L-40 40 RB110C Part No. ’ ' Packge Circuits - 4 0 — + 125

Sanken rb60

Abstract: FMLG12 CTB34 sanken shv16 rb60 RECTIFIER
Contextual Info: E 3 SANKEN ELECTRIC CO LT» •“•i 3SE » 7 ^ 0 7 4 1 D00QÔD1 3 High Voltage Diodes Rating/ Characteristics V rsm kV VRM:2~24kV Absolute Maximum Ratings Vrm lo Tc If s m ro (A) (kV) (mA) 5 0 H z H a lf S in e W ave S in g le P u ls e Type No. SHV-02

rb40n

Abstract: CTU1S ctu-1s 7110743 RB401 ctb-34 RB402 RB602 RB-404N CTB34
Contextual Info: SANKEN ELECTRIC HE U S A I I 7110743, 000007b |Vrm100~1000V 2 | Ilo : 0.3— 6A m sÉBm Bosssm am m ^ssM RBSeries /DA1Z Absolute Maximum Rating Type No. V rsm V rm Io If s m V) (V) (A) (A) With Fin 50H z H a lf S in e W ave S in g le P u ise 4 .0 80 RB-401

fmlg12

Abstract: RB40 N
Contextual Info: 3SE D SANKEN ELECTRIC CO LTD Rectifier Diodes i. 7^07m 0DGG7*ì3 fl tm S A K J ~ fiO i-*0\ EVrm:* 0~ 1500V EIo:0.5~ 3.0A S F P M /A M /E M /R M /R O A b s o lu te M a x im u m R a tin g s R a tin g / Vrm V) lo (A) Ifsm (A) Tj CC) Tstg CC) 50Hz Half Sine

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

rb60 RECTIFIER

Abstract: ITE 8512 ctl22s RB40 rb60 Sanken rb60 rb40 diodes CTL-22S CTUG3D RB40 N
Contextual Info: SANKEN ELECTRIC CO LT» m 35E » 7110741 DGDOfill 0 S A K J “7723-07 •M Ultra Fast Recovery Diodes EVrm:100~ 6 0 0 V E io : 5 ~ 20 A CTL/RBV/RBA Absolute Maximum Ratings V rm V lo (A) 200 200 With 50H2HallSineWave SinglePulse Fin 5.0 35 100 100 200

SD MOSFET DRIVE DATASHEET 4468 8 PIN

Abstract: SK 18752 ctx12s fgt313 18752 SANKEN sla6805m fn651 sla6101 SK 18751 str20012
Contextual Info: 半导体产品总目录 Sanken Electric Co., Ltd. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan 电话：81-3-3986-6164 传真：81-3-3986-8637 海外销售办事处 亚洲 新加坡 Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720

CTX12S

Abstract: SLA4038 fn651 SLA4037 sla1004 CTB-34D SAP17N 2SC5586 2SK1343 CTPG2F
Contextual Info: <Semiconductor Discontinued and Service Parts> 2010.2.4 Alternative Part No. 2SA744 2SA745 2SA746 2SA747 2SA764 2SA765 2SA768 2SA769 2SA770 2SA771 2SA807 2SA808 2SA878 2SA892 2SA907 2SA908 2SA909 2SA957 2SA958 2SA971 2SA980 2SA981 2SA982 2SA1067 2SA1068 2SA1102

rb60 RECTIFIER

Abstract: rb40 diodes rb40 RECTIFIER RB40 CTB34 RB40 N CTB-34 CTU-G3DR CTUG3DR FMU-14S
Contextual Info: y Fast Recovery Diodes b VrmM00~1300V Elo:4.0~20A CTU/FMU Absolute Maximum Ratings R a ting/ Characteristics V rsm V lo (A) V rm (V) With Fin Type N o N ^ CTU-G2DR CTU-G3DR FMU-12S, R FMU-14S, R FMU-16S, R FMU-21S, R FMU-22S, R FMU-24S, R FMU-26S, R FMU-32S, R

rb60 RECTIFIER

Abstract: FMLG22 rb40 RECTIFIER FMG-G26S FMG-22S FMLG22S marking 26s tl 0741 FMLG12S FMGG26S
Contextual Info: SANKEN ELECTRIC CO LTD BSE » Ultra Fast Recovery Diodes Bi 7 ^ 0 7 4 1 Ü0DDÔ1S ¡ S A K J ^ o ^ n V Io : 5 . 0 — r m : 1 0 0 ~ 6 0 0 V 2 0 A /FMI Type N a \ ^ FMG-11S, R FMG-12S, R FMG-13S, R FMG-14S, R FMG-21S, R FMG-22S, R FMG-23S, R FMG-24S, R FMG-26S, R

rb40 bridge rectifier

Abstract: rb60 bridge rectifier bridge rectifier sanken rb40 bridge rb60 rb40 bridge rb60 RECTIFIER Sanken rb60 RB40 SKI bridge rb60 rectifier LB-156
Contextual Info: SANKEN ELECTRIC U S A 11E » § 7eH 0 7 4 1 DDDG153 7 | Rectifier Diodes |V rm : 1 0 0 — 1 0 0 0 V • lo |1 5 ~ 2 5 A CTM/RB/LB R ating/ Characteristics T '2 . 3 - ^ 7 Absolute Maximum Ratings Vrsm V V rm (V) Type N a \ ^ CTM-21S CTM-21R CTM-22S CTM-22R

SMEW

Abstract: CTG-32R CTG-34S CTG34S 2nd year f.a CTG22r CTG-34 marking CTG ctg22s CTG-22R
Contextual Info: M SANKEN ELECTRIC CO LTD 35E D B L ' ^ ltra Fast Recovery Diodes 7 ? m 000D817 7 • S A K J ‘p ¿ 3-07 E V rm :7 0 ~ 400V E lo :5 .0 ~ 2 0 A 1 CTG rsm V Type NoN V (V ) 70 70 200 200 400 400 70 70 200 200 300 300 400 400 70 70 200 200 300 300 400

ctb34

Abstract: FMLG12 rb40 diodes RB40 N Sanken rb60 RB40 rb60 RECTIFIER CTB-34 7110743 FML-G12
Contextual Info: SANKEN ELECTRIC CO L T » 3 5E m » •M 7110741 DGDOfill 0 SAK J EVrm:100~ 600V Ultra Fast Recovery Diodes E io : 5 ~ 20A CTL/RBV/RBA Absolute Maximum Ratings V rsm V V rm (V) Type N o \ ^ per chip CTL-12S CTL-21S CTL-22S CTL-31S CTL-32S RBV-406H RBA-402L

CTUG3D

Abstract: D0200
Contextual Info: SANKEN ELECTRIC CO LT» 3SE » Schottky Barrier Diodes •a 00008S1 7 n o 7 m E3Vrm : i 30—90V Elo : 0.7—30A SFPB/AK/EK/RK/FMB/CTB/RBA/RBV 36 Type N o \ ^ Per chip S F P B -5 4 S F P B -6 4 S F P B -5 6 S F P B -5 9 AK 03 AK 04 AK 06 AK 09 EK 0 3 EK 0 4

Contextual Info: SANKEN •n ELECTRIC CO 3SE LT» D 7=n0741 0DDÜÔ03 ? ^SAKJ 7 -_ o 3 -d Fast Recovery Diodes HVrm:200~ 2000V Elo:0.2~ 0.8A AU/AS/RC/RU/EP/EU/EH/RF ,6o57±002 ¿ q j q í OOS Cathode Marking Cathode Marking ira / / * + 04,O±o^ ÿ 2 .4 ±0 Cathode 1 Marking

Contextual Info: SANKEN ELECTRIC CO LTD 3SE D Fast Recovery Diodes Eä ? CJC10741 OODQÖD7 4 ^ SAKJ fT03*Ö EVRM:100~2000V Eio:0.l~4.0A RU/RP/RS/RH V rm (V Ifsm Tj (A) CC) Tstg CC) 450 400 650 600 100 100 450 400 650 600 450 400 650 600 100 100 400 400 600 600 1.1 1.5 Vf

RB40

Abstract: CTB-34
Contextual Info: t j S A NK EN E L E C T R I C CO LTD 3SE [ 1 Fast Recovery Diodes @ T> 7^0741 GQOOfill b i S S A K J HVRM:100~600V e io :0.7~12.0A CTU/UB/RB Absolute Maximum Ratings Rating/ Characteristics V rsm V V rm (V) If s m Tj (A) (A) (SC) Electrical Characteristics (Ta= 25“C)

Contextual Info: Data Sheet Fast recovery diodes RF601B2D Dimensions Unit : mm Land size figure (Unit : mm) 6.0 Features 1)Power mold type.(CPD) 2)Ultra Low VF 1.6 3.0 1.6 2.0 6.0 Applications General rectification 3)Very fast recovery 4)Low switching loss Structure