RAYTHEON
Abstract: OC768 RMLA00400 transimpedance amplifier 10 GHz
Contextual Info: RMLA00400 40 Gb/s Transimpedance Amplifier ADVANCED INFORMATION Description Features The Raytheon RF Components RMLA00400 is a very high speed Transimpedance Amplifier TIA MMIC for 40 Gb/s (OC768) fiber optic systems. It is available in die form, and is manufactured using Raytheon RF Components’
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RMBA09501
Abstract: RMBA09501-58 2 Watt rf Amplifier grm39 fr4 metal slug
Contextual Info: RF Components RMBA09501-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF
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Contextual Info: Raytheon Electronics Œ « â » Description The Raytheon RMLA12000-70 is a 2 stage GaAs MMIC PHEMT LNA for use in Direct Broadcast Satellite DBS and phased array front end applications. This device is particularly useful for Twin and Quattro LNB applications requiring low noise RF input amplification while minimizing
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RAYTHEON
Abstract: RMDA20420 80Au multiplier mmic
Contextual Info: RF Components RMDA20420 20-42 GHz General Purpose MMIC Amplifier ADVANCED INFORMATION Description Features The Raytheon RF Components RMDA20420 is a broadband general purpose driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS, SatCom and
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RAYTHEON
Abstract: RMLA3565A-58 RO4003
Contextual Info: RF Components RMLA3565A-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description The Raytheon RF Components RMLA3565A-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or
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RAYTHEON
Abstract: PCS1900 RMBA19500-58 RMBA19500A RMBA19500A-58 RCI-0603-1101J
Contextual Info: RF Components RMBA19500A-58 PCS1900 2 Watt GaAs MMIC Power Amplifier PRODUCT INFORMATION The RMBA19500A-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF Description Components’ pHEMT process. It has been designed for use as a driver stage for PCS1900 base
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RAYTHEON
Abstract: RMLA3565-58 RO4003
Contextual Info: RF Components RMLA3565-58 Wideband Low Noise MMIC Amplifier PRODUCT INFORMATION Description Features The Raytheon RF Components RMLA3565-58 is a single bias wideband low noise MMIC amplifier designed for the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits or
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circuit diagram of 4 channel long range RF based
Abstract: circuit diagram of 8 channel long range RF based raytheon gaas 6.0-18.0 GHz mmic RAYTHEON rmpa61810 copper bond wire
Contextual Info: RF Components RMPA61810 Single Channel 6-18 GHz 1 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Raytheon RF Components RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility
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rmpa61810600macircuit diagram of 4 channel long range rf basedcircuit diagram of 8 channel long range rf based+4raytheon gaas6.0-18.0 ghz mmicraytheoncopper bond wire
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GRM36COG101J50
Abstract: RMBA09501-58 RMBA09501A RMBA09501A-58 ba095 GRM39Y5V104Z50 grm39
Contextual Info: RF Components RMBA09501A-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon
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RCI-0402-10R0J
Abstract: RAYTHEON RMBA09500-58 grm39 GRM36COG8R2B50 OIP35 grm36cog101j50
Contextual Info: RF Components RMBA09500-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon
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oc-192 modulator
Abstract: RAYTHEON DC-20 RMDA00100 oc 192 modulator
Contextual Info: RMDA00100 OC-192 Modulator Driver MMIC ADVANCED INFORMATION Description The Raytheon RF Components RMDA00100 is a medium power broadband amplifier MMIC suitable as a driver for external optical modulators for OC-192 fiber optic systems. It is available in
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RAYTHEON
Abstract: RMPA2550-252 54Mbps IC155
Contextual Info: Raytheon RMPA2550-252 RF Components 2.4-2.5 GHz and 5.15-5.35 GHz Dual Band InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Absolute Ratings1 The RMPA2550-252 is a dual frequency band power amplifier designed for high performance WLAN
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RCI-0603-1001J
Abstract: GRM39COG100J050AD RAYTHEON RMBA19500 RMBA19500-58 2 Watt rf Amplifier RCI-0603-20R0J
Contextual Info: RF Components RMBA19500-58 - PCS 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA19500 is a highly linear Power Amplifier. The circuit uses Raytheon RF Components’ pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output
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DA2900
Abstract: RAYTHEON Power Amplifier MMIC 2.6 GHz DA29000
Contextual Info: # 425430398 RMDA29000 27-31 GHz Driver Amplifier MMIC ADVANCED INFORMATION Description Features The Raytheon RF Components RMDA29000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications.
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Raytheon RF Components
Abstract: RAYTHEON RMWM38001 RMWP38001 raytheon mixer
Contextual Info: RMWM38001 38 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon RF
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long range gold detector circuit diagram
Abstract: gold detector circuit diagram RMPA39300 RAYTHEON gold detector circuit
Contextual Info: Raytheon RMPA39300 RF Components 37-40 GHz 2 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features The RMPA39300 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, and other millimeter wave applications. The RMPA39300 is a three stage
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RAYTHEON
Abstract: RMWL26001 RMWM26001 26 GHz mixer
Contextual Info: RMWM26001 26 GHz Mixer MMIC PRODUCT INFORMATION Description Features The RMWM26001 is a 26 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon RF
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RMLA18250
Abstract: id46 raytheon mhemt 2574 transistor
Contextual Info: Raytheon RF Components RMLA18250 18-25 GHz Low Noise Amplifier MMIC ADVANCED INFORMATION Description Features The RMLA18250 is a 3-stage GaAs Low Noise MMIC Amplifier designed for operation from 18 to 25 GHz. The amplifier operates with a +1V positive supply voltage and is ideal for low noise applications
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RAYTHEON
Abstract: RMPA29400 2 Watt rf Amplifier power amplifier mmic
Contextual Info: Raytheon RMPA29400 RF Components 27-32 GHz 2.8 Watt Power Amplifier MMIC ADVANCED INFORMATION Description Features Electrical Characteristics At 25°C 50 Ω system, Vd=+5 V, Quiescent current (Idq) = 1.6 A The RMPA29400 is a high efficiency power amplifier designed for use in point to point radio, point to
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RAYTHEON
Abstract: 50W 4 GHz linear power amplifier
Contextual Info: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
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LLV1005FB10NJ
Abstract: RAYTHEON GRM21BR60J106K LLV1005FB15NJ RMPA5251 RMPA5251-251 grm39
Contextual Info: RMPA5251-251 Raytheon RF Components 4.90 - 5.85 GHz InGaP HBT Linear Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics1 The RMPA5251-251 power amplifier is designed for high performance WLAN applications in the 4.9 to 5.35 and 5.15 to 5.85 GHz frequency bands. The low profile 16 pin 3 x 3 x 0.9 mm package with
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CDMA2000-1X
Abstract: RAYTHEON RMPA1956-103
Contextual Info: RMPA1956-103 - 3.5 V Dual Band Tri-Mode AMPS, CDMA & CDMA2000-1X Power Amplifier Module RF Components PRODUCT INFORMATION Description Features The RMPA1956-103 is a power amplifier for AMPS, CDMA and CDMA2000-1X personal communications system PCS applications. The PA operates over both the Cellular and PCS bands.
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pin configuration of 8251
Abstract: C17-C19 PA1900 RMPA1901-53 MURATA MW
Contextual Info: RMPA1901-53 PCS CDMA GaAs MMIC Power Amplifier Description Features The RMPA1901-53 is a monolithic high efficiency power amplifier for PCS CDMA applications. Performance parameters may be slightly adjusted by “tweaking” the off-chip matching components. The amplifier circuit design
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RAYTHEON
Abstract: CDMA2000-1X RMPA1953-103 RAYTHEON INC, INTERFACE ACPR24
Contextual Info: RMPA1953-103 3V PCS CDMA & CDMA2000 Power Amplifier Module with Digital Bias Control ADVANCED INFORMATION Description Features The RMPA1953-103 is a power amplifier for CDMA and CDMA2000-1X personal communications system PCS applications. The PA is internally matched to 50 ohms to minimize the use of external components. Advanced DC
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