80AU Search Results
80AU Datasheets (4)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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SMAZKC180AU
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Jiangsu JieJie Microelectronics Co Ltd | Silicon power Zener diodes in SMA package with 1.5W power rating, voltage range 6.8V to 200V, low zener impedance, AEC-Q101 qualified, suitable for high-power stabilization and clamping circuits. | Original | ||||
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SMBZSC180AU
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Jiangsu JieJie Microelectronics Co Ltd | Silicon power Zener diode in SMB package with 3000mW power dissipation, voltage range 6.8V to 200V ±5%, low zener impedance, AEC-Q101 qualified, suitable for stabilization and clamping circuits.Silicon power Zener diode in SMB package with 3000mW power dissipation, voltage range 6.8V to 200V, ±5% tolerance, low zener impedance, and AEC-Q101 qualified for high-power stabilization and clamping circuits.Silicon power Zener diode in SMB package with 3000mW power rating, voltage range 6.8V to 200V ±5%, low zener impedance, AEC-Q101 qualified, suitable for high-power stabilization and clamping circuits.Silicon power Zener diode in SMB package with 3000mW power rating, voltage range 6.8V to 200V ±5%, low zener impedance, AEC-Q101 qualified, suitable for high-power stabilization and clamping circuits.Silicon power zener diode in SMB package with 3000mW power rating, voltage range 6.8V to 200V ±5%, low zener impedance, AEC-Q101 qualified, suitable for high-power stabilization and clamping circuits.3.0W SMBZSCxxAU series Zener diodes in SMB package feature 6.8V to 200V zener voltage range, ±5% tolerance, low zener impedance, 3000mW power dissipation on FR-4 board, and AEC-Q101 qualification for high-power stabilization and clamping circuits.Silicon power zener diode in SMB package with 3000mW power rating, voltage range 6.8V to 200V ±5%, low zener impedance, AEC-Q101 qualified, suitable for stabilizing and clamping circuits.Silicon power Zener diode in SMB package with 3000mW power rating, voltage range 6.8V to 200V ±5%, low zener impedance, AEC-Q101 qualified, suitable for stabilization and clamping circuits. | Original | ||||
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GT25Q80A-U
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NOR Flash以其合适的容量、灵活的存取操作、及其非易失性产品特性，非常适合作为智能设备的指令程序存储器。随着5G、IOT、AMOLED、TDDI、TWS及汽车电子等应用市场快速发展，NOR Flash的需求保持持续的增长动力。特别是在汽车电子、5G基站等需要高可靠性的应用场景，NOR Flash已经成为刚需，其价值不可替代。聚辰半导体以其领先的存储器设计技术，推出SPI NOR Flash产品，可以覆盖从消费级，到工业级，直至汽车级的所有应用，产品在可靠性，功耗，温度和速度等关键性能指标方面达到国内外前沿水准。 | Original | ||||
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SMAZPC180AU
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Jiangsu JieJie Microelectronics Co Ltd | Silicon power Zener diodes in SMA package with 2500mW power dissipation, voltage range from 6.8V to 200V, ±5% tolerance, low zener impedance, and AEC-Q101 qualified for high power stabilization and clamping applications.Silicon power Zener diode in SMA package with 2500mW power rating, AEC-Q101 qualified, voltage range 6.8V to 200V ±5%, low zener impedance, designed for high-power stabilization and clamping circuits. | Original |
80AU Price and Stock
ECS International Inc ECS-2033-080-AUXTAL OSC XO 8.0000MHZ CMOS SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ECS-2033-080-AU | Tape & Reel | 226,000 | 1,000 |
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ECS-2033-080-AU | Tape & Reel | 97,000 | 10 Weeks | 1,000 |
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ECS-2033-080-AU | 3,353 |
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ECS-2033-080-AU | Cut Tape | 394 | 1 |
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ECS-2033-080-AU | Tape & Reel | 14 Weeks | 1,000 |
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ECS-2033-080-AU | 2,000 |
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ECS International Inc ECS-3951M-080-AU-TRXTAL OSC XO 8.0000MHZ HCMOS SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ECS-3951M-080-AU-TR | Cut Tape | 5,381 | 1 |
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ECS-3951M-080-AU-TR | 1,248 |
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Maxim Integrated Products MAX31180AUA-TIC CLK GEN LOW JITTER 8USOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAX31180AUA-T | Cut Tape | 3,871 | 1 |
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Allegro MicroSystems LLC ACS730KLCTR-80AU-TCURRENT SENSOR HE/OL 80A 8-SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ACS730KLCTR-80AU-T | Digi-Reel | 2,113 | 1 |
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ECS International Inc ECS-3963-080-AU-TRXTAL OSC XO 8.0000MHZ HCMOS SMD |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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ECS-3963-080-AU-TR | Cut Tape | 2,018 | 1 |
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ECS-3963-080-AU-TR | Tape & Reel | 10 Weeks | 1,000 |
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ECS-3963-080-AU-TR | 1,850 |
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ECS-3963-080-AU-TR | Tape & Reel | 1,000 | 1,000 |
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ECS-3963-080-AU-TR | Tape & Reel | 14 Weeks | 1,000 |
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Buy Now | |||||
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ECS-3963-080-AU-TR | 2,000 |
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80AU Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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RMLA18250
Abstract: id46 raytheon mhemt 2574 transistor
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RMLA18250 RMLA18250 id46 raytheon mhemt 2574 transistor | |
RAYTHEON
Abstract: RMPA39000
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RMPA39000 RMPA39000 RAYTHEON | |
RAYTHEON
Abstract: RMWL26001 RMWM26001 26 GHz mixer
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RMWM26001 RMWM26001 RMWL26001 RAYTHEON 26 GHz mixer | |
RAYTHEON
Abstract: RMPA29400 2 Watt rf Amplifier power amplifier mmic
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RMPA29400 RMPA29400 RAYTHEON 2 Watt rf Amplifier power amplifier mmic | |
long range gold detector circuit diagram
Abstract: gold detector circuit diagram RMPA39300 RAYTHEON gold detector circuit
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RMPA39300 RMPA39300 long range gold detector circuit diagram gold detector circuit diagram RAYTHEON gold detector circuit | |
long range gold detector circuit diagram
Abstract: RMWD38001 gold detector circuit diagram
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RMWD38001 RMWD38001 18dBm long range gold detector circuit diagram gold detector circuit diagram | |
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Contextual Info: RMPA19000 18-22 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor's RMPA19000 is a high efficiency driver amplifier designed for use in point to point radio, point to multi-point communications and other millimeter wave applications. The RMPA19000 is a 3-stage |
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RMPA19000 RMPA19000 | |
15 watt power supply circuit diagramContextual Info: RMPA39200 37-40 GHz 1.6 Watt Power Amplifier MMIC PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3stage GaAs MMIC amplifier utilizing Fairchild Semiconductor's advanced 0.15µm gate length Power PHEMT |
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RMPA39200 RMPA39200 15 watt power supply circuit diagram | |
long range gold detector circuit diagram
Abstract: gold detector circuit diagram
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RMWB12001 long range gold detector circuit diagram gold detector circuit diagram | |
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Contextual Info: RMWT04001 4-12 GHz Tripler MMIC PRODUCT INFORMATION Description Features The RMWT04001 is a 4 to 12 GHz Tripler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Fairchild |
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RMWT04001 RMWT04001 | |
D1N6098
Abstract: RMPA19000
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RMPA19000 RMPA19000 29dBm D1N6098 | |
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Contextual Info: RMWL26001 21-26.5 GHz Low Noise Amplifier MMIC PRODUCT INFORMATION Description Features The RMWL26001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Low Noise Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In |
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RMWL26001 RMWL26001 | |
long range gold detector circuit diagramContextual Info: RMWD24001 21-26.5 GHz Driver Amplifier MMIC PRODUCT INFORMATION Description Features The RMWD24001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 26.5 GHz Driver Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In |
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RMWD24001 RMWD24001 long range gold detector circuit diagram | |
A29200
Abstract: power amplifier mmic
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RMPA29200 RMPA29200 A29200 power amplifier mmic | |
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Contextual Info: RMPA39000 37-40 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point radio, point to multi point communications, LMDS and other millimeter-wave applications. The RMPA39000 is a 3stage GaAs MMIC amplifier chip utilizing Fairchild Semiconductor's advanced 0.15 µm gate length Power PHEMT |
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RMPA39000 RMPA39000 | |
power amplifier mmicContextual Info: RMWP23001 21-24 GHz Power Amplifier MMIC PRODUCT INFORMATION Description Features The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction |
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RMWP23001 RMWP23001 power amplifier mmic | |
long range gold detector circuit diagram
Abstract: RMWB33001
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RMWB33001 RMWB33001 19dBm long range gold detector circuit diagram | |
long range gold detector circuit diagram
Abstract: RMWB12001
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RMWB12001 RMWB12001 21dBm long range gold detector circuit diagram | |
long range gold detector circuit diagram
Abstract: 25C2229 RMWB04001
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RMWB04001 RMWB04001 20dBm long range gold detector circuit diagram 25C2229 | |
RAYTHEON
Abstract: RMDA25000
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RMDA25000 RMDA25000 RAYTHEON | |
RAYTHEON
Abstract: raytheon downconverter RMWM38001
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RMWM38001 RMWM38001 RAYTHEON raytheon downconverter | |
RAYTHEON
Abstract: RMWT04001 Frequency tripler
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RMWT04001 RMWT04001 RAYTHEON Frequency tripler | |
raytheon downconverter
Abstract: RAYTHEON RMWL26001 RMWM26001 26 GHz mixer raytheon mixer
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RMWM26001 RMWM26001 Base362 raytheon downconverter RAYTHEON RMWL26001 26 GHz mixer raytheon mixer | |
SN62 PB36 ag2
Abstract: MA4BN1840-1
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MA4BN1840-1 10GHz 50GHz MA4BN1840-1 SN62 PB36 ag2 | |