RAMTRON FRAM SERIAL MEMORY Search Results

footprint soic

Abstract: FM24C256-S1 FM24C256 FM24C256-S Ramtron FRAM Serial Memory
Contextual Info: Dual Footprint Layout for the FM24C256 SOP Packages Ramtron manufactures 256K serial FRAM memory products that are offered in both the 20-pin and 8-pin SOP. The FM24C256 device was first introduced in the 20 pin SOP and is migrating to the 8 pin SOP package for

Contextual Info: I Benefits Of Ramtron’s FM24C04 Serial FRAM Memory ^pM T R O N s j \ ] _ n .! • s e r i a l V " . !; ¡ M ! K \ M '• m u n x > i ' \ . i 1 - v■ ■■r" | fa u ik s n n . V "ia \i ■a \ l n K ‘ i. a n d o k . n ' - ' k ‘ ' \ k p u p i l s :n I ' l g a i v

disadvantages of microcontroller 8051

Abstract: International Paints FM28V100 interfacing 8051 with parallel ram RAMTRON renault AEC-Q100 FM25V05 FM25V10 VRS51L3074
Contextual Info: Parallel F-RAM has 1 Mb parallel memory cycle time of 90 ns., Ramtron International Search for: Page 1 of 7 Search what? News Go Dec 12, 2008 Advertisement Sections Newsroom Advertisers Latest New Product News Industrial Market Trends Green & Clean News Association & Government

fm25v10

Abstract: 130nm CMOS SPI flash product id 1E14 Ramtron FRAM Serial Memory
Contextual Info: Ramtron announces 1-megabit serial F-RAM : Electronics News from ElectronicSpecifier Page 1 of 2 memory, flash memory, FM25V10, Ramtron Ramtron announces 1-megabit serial F-RAM News Release from: Ramtron International Corporation 24/09/2008 Ramtron International has announced the first device in a family of new F-RAM products that offer highspeed read/write performance, low voltage operation, and optional device features. The first device in

FM24CL64b

Abstract: FM28V202 FM25CL64B FM24C64B FM28V402-C FM24C16B FM28MV802-C FM25V FM24CL04B fm24c04b
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2011 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

chn 734

Abstract: FM3316 CHN 545 interface 8KB ROM and 16KB RAM to 8051 fm23mld16 FM25L04 MLF68 FM24C16A FM22L16 FM28V020 MATERIALS
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tri al M ed ica l Sc ien tifi c g rin ete M ve oti m to Au ng uti p m Co c tifi n e i Sc ial str u Ind l ica ed M Short Form Catalog First Edition 2010 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

fm23mld16

Abstract: FM3316 7313 28 pin FM25L04 soic8 footprint interface 8KB ROM and 16KB RAM to 8051 FM22L16 FM6124 footprint soic28 RAMTRON
Contextual Info: Co mp uti ng M ete rin g Au tom oti ve Ind us tria l M ed ica l Sc ien tifi c g rin e t e M e tiv o tom Au ng uti p m Co fic nti e i Sc l tria s u Ind Short Form Catalog l ica d e M First Edition 2009 l ria st du In e iv ot m to Au g in er et M Ferroelectric random access memory F-RAM products combine

WM720166

Abstract: rfid reader 915MHZ
Contextual Info: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs

rfid reader 915MHZ

Abstract: RFID specifications
Contextual Info: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs

FM33256

Contextual Info: FM33256B 3V Integrated Processor Companion with F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Low VDD Detection Drives Reset • Watchdog Window Timer • Early Power-Fail Warning/NMI

ISO-18000-6C

Abstract: chip antenna rfid UHF 8pin udfn iso/rfid "write sensitivity"
Contextual Info: P r o d u c t B r i e f WM72016 16-Kbit Secure F-RAM Memory with Gen-2 RFID Access and Serial Port Direct Memory Access Description Features The WM72016 is an RF-enabled transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric

Contextual Info: P r o d u c t B r i e f WM72016 16-Kbit Secure F-RAM Memory with Gen-2 RFID Access and Serial Port Direct Memory Access Description Features The WM72016 is an RF-enabled transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric

ISO-18000-6C

Abstract: ISO18000-6C WM72016 1E14 fram rfid
Contextual Info: P r o d u c t B r i e f WM72016 16-Kbit Secure F-RAM Memory with Gen-2 RFID Access and Serial Port Direct Memory Access Description Features The WM72016 is an RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random

ISO18000-6C

Abstract: ISO-18000-6C RFID protocol ISO18000-6 WM72016 1E14 RF Radio frequency IC, 8pin EPC Gen2 class1 Ramtron FRAM Serial Memory chip antenna rfid UHF
Contextual Info: P r o d u c t B r i e f WM72016 16-Kbit Secure F-RAM Memory with Gen-2 RFID Access and Serial Port Direct Memory Access Description Features The WM72016 is an RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 Ramtron FRAM Serial Memory
Contextual Info: FM25040 R 3M 1R O N 4Kb FRAM Serial Memory Features 4K • • • • • bit Ferroelectric Nonvolatile RAM Organized as 512 x 8 bits High endurance 10 Billion 1010 read/writes 10 year data retention at 55° C No write delay Advanced high-reliability ferroelectric process

FM25C160

Abstract: FM25C160-P FM25C160-S MS-001
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay Writes • Advanced high-reliability ferroelectric process

1E10

Abstract: FM25040 FM25040-P FM25040-S FM25160 MS-001
Contextual Info: FM25040 4Kb FRAM Serial Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

FM25160

Abstract: 1E10 FM25040 FM25160-P FM25160-S MS-001
Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

Atmel DATE CODE at25256

Abstract: FM24Cxx AT25256 FM25256 FM30C256 "Ferroelectric RAM" circuit cellar
Contextual Info: Battery-Free Nonvolatile RAM Do you have a RAM-hungry design in the works? If so, check out what Brian has to say about Ramtron International’s integrated processor companions. They may be the perfect solution for your memory problems. J. oday's microcontrollers come with

FM25V05

Abstract: Green house farming renault 512-Kilobit development trends in car manufacture 1E14 AEC-Q100 FM25V10 VRS51L3074 32 megabit serial flash
Contextual Info: High-Speed F-RAM Device provides 512 Kb capacity., Ramtron International Corp. Search for: Page 1 of 7 Search what? News Go Dec 12, 2008 Advertisement Sections Tempco Electric Heater Corporation Latest New Product News Designs and Manufactures Heating Elements, Temperature

Contextual Info: Preliminary FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay Writes • Advanced high-reliability ferroelectric process

FM25C160

Abstract: FM25C160-P FM25C160-S MS-001
Contextual Info: FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay Writes • Advanced high-reliability ferroelectric process

Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process

1E10

Abstract: FM25040 FM25160 FM25160-P FM25160-S opcoa
Contextual Info: FM25160 6 R 3 M 1 R O N 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process