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    RAMTRON FRAM SERIAL MEMORY Search Results

    RAMTRON FRAM SERIAL MEMORY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54S189J/C
    Rochester Electronics LLC 54S189 - 64-Bit Random Access Memory PDF Buy
    27S191DM/B
    Rochester Electronics LLC AM27S191 - 2048x8 Bipolar PROM PDF Buy
    27S19ADM/B
    Rochester Electronics LLC AM27S19 - 256-Bit Bipolar PROM PDF Buy
    54LS224AJ/B
    Rochester Electronics LLC 54LS224 - 64-Bit FIFO Memories PDF Buy
    MD2716M/B
    Rochester Electronics LLC 2716M - 2Kx8 EPROM PDF Buy

    RAMTRON FRAM SERIAL MEMORY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FM33256

    Contextual Info: FM33256B 3V Integrated Processor Companion with F-RAM Features High Integration Device Replaces Multiple Parts • Serial Nonvolatile Memory • Real-time Clock RTC with Alarm • Low VDD Detection Drives Reset • Watchdog Window Timer • Early Power-Fail Warning/NMI


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    FM33256B 16-bit 256Kb 545-FRAM, FM33256B FM33256 PDF

    Contextual Info: Preliminary FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay Writes • Advanced high-reliability ferroelectric process


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    FM25C160 FM25C160 16-kilobit MS-001 PDF

    Contextual Info: Preliminary FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay Writes • Advanced high-reliability ferroelectric process


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    FM25C160 FM25C160 16-kilobit MS-001 MS-001 PDF

    Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM25640 FM25640 64-kilobit ferroel89 PDF

    Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


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    FM25640 FM25640 64-kilobit MS-001 PDF

    FM24C16

    Abstract: FM24C16-P 1E10 FM24C16-S MS-001
    Contextual Info: FM24C16 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM24C16 FM24C16 16-kilobit MS-001 FM24C16-P 1E10 FM24C16-S PDF

    FM25640-P

    Abstract: SCK SDA WP
    Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM25640 FM25640 64-kilobit MS-001 MS-001 FM25640-P SCK SDA WP PDF

    FM24C64

    Contextual Info: Preliminary FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM24C64 FM24C64 64-kilobit PDF

    FM24C64

    Abstract: FM24C64-P FM24C64-S
    Contextual Info: Preliminary FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM24C64 FM24C64 64-kilobit FM24C64-P FM24C64-S PDF

    Contextual Info: Preliminary FM24CL16 16Kb 2.7V-3.6V FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 1 Trillion 1012 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM24CL16 FM24CL16 16-kilobit MS-012 PDF

    Contextual Info: Preliminary FM24CL16 16Kb FRAM 2-wire Memory 2.7V-5.5V operation Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM24CL16 FM24CL16 16-kilobit MS-012 PDF

    Contextual Info: Preliminary FM24C256 256Kb FRAM Serial Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


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    FM24C256 256Kb 20-pin FM24C256 256-kilobit PDF

    24C64 pinout detail

    Abstract: 24C64 WP st programming 24c64 24C64 24C64 WP FM24C64 FM24C64-P FM24C64-S M24C64 MS-001
    Contextual Info: FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


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    FM24C64 FM24C64 64-kilobit MS-001 24C64 pinout detail 24C64 WP st programming 24c64 24C64 24C64 WP FM24C64-P FM24C64-S M24C64 PDF

    Contextual Info: Preliminary FM24CL16 16Kb FRAM 2-wire Memory 2.7V-5.5V operation Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM24CL16 FM24CL16 16-kilobit MS-012 PDF

    CHIP 8-PIN 24c16

    Abstract: 24c16 5 pin pinout 24c16 wp eeprom 24C16 5 pin SCK SDA WP
    Contextual Info: ParallelFRAM Memories r^ p M T R O N Product Family Summary - Complete datasheets available at w w w .ram ton.com Features With Ramtron's ferroelectric technology, all writes are nonvolatile, eliminating long delays, extra control sequencing, or high voltage pins.


    OCR Scan
    545-FRAM, CHIP 8-PIN 24c16 24c16 5 pin pinout 24c16 wp eeprom 24C16 5 pin SCK SDA WP PDF

    marking c2h

    Abstract: RG5V20 FM25V20-G
    Contextual Info: Pre-Production FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


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    FM25V20 /Ro1029 FM25V20-G FM25V20-DG FM25V20-GTR FM25V20-DGTR marking c2h RG5V20 PDF

    RG5V20

    Abstract: FM25V20 FM25V20-G RAMTRON FM25V20-DG
    Contextual Info: Pre-Production FM25V20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


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    FM25V20 /Ro1029 FM25V20-G FM25V20-DG FM25V20-GTR FM25V20-DGTR RG5V20 FM25V20 RAMTRON PDF

    fm25160s

    Contextual Info: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 85° C • NoDelay write • Advanced high-reliability ferroelectric process


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    FM25160 FM25160 16-kilobit FM25160-P FM25160-S 545-FRAM, fm25160s PDF

    Contextual Info: Preliminary FM25640 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • No write delay • Advanced high-reliability ferroelectric process


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    FM25640 FM25640 64-kilobit FM25640-P FM25640-S 545-FRAM, PDF

    Contextual Info: Pre-Production FM25L256 256Kb FRAM Serial 3V Memory – Extended Temp. Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM25L256 256Kb PDF

    rg5H20

    Abstract: fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G
    Contextual Info: Pre-Production FM25H20 2Mb Serial 3V F-RAM Memory Features 2M bit Ferroelectric Nonvolatile RAM • Organized as 256K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM25H20 rg5H20 fm25h20-g FM25H20-DG FM25H20-GTR FM25H20G PDF

    Contextual Info: Preliminary FM25C160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits • High endurance 10 Billion 1010 read/writes • 10 year data retention at 55° C • NoDelay Writes • Advanced high-reliability ferroelectric process


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    FM25C160 FM25C160 16-kilobit FM25C160-P FM25C160-S 545-FRAM, PDF

    FM25CL64B-G

    Abstract: fm25cl64B
    Contextual Info: Preliminary FM25CL64B 64Kb Serial 3V F-RAM Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay Writes • Advanced High-Reliability Ferroelectric Process


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    FM25CL64B FM25L64B, RG5L64B FM25CL64B FM25CL64B-G PDF

    RG5V02

    Abstract: fm25v02
    Contextual Info: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


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    FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 fm25v02 PDF