RAM 8403 Search Results

S4-144

Abstract: IC cs 4852 T6116 6116LA25
Contextual Info: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or­

8403602JA

Abstract: 8403606JA
Contextual Info: HM-65162 Semiconductor 2K x 8 Asynchronous CMOS Static RAM March 1997 Description Features • Fast Access Time. 70/90ns Max • Low Standby Max • Low Operating C u rren t. 70mA Max

C1995

Abstract: DP8408A g2ns ab-9 national
Contextual Info: National Semiconductor Application Brief 9 Tim Garverick Rusty Meier January 1986 If one desires the fastest possible operation of the DP8408A 9A multi-mode dynamic RAM controller driver in accessing DRAMs mode 4 externally controlled access mode should be considered

8403602ZA

Abstract: 8403602JA 8403606JA 65162 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9
Contextual Info: HM-65162 TM 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V

8403602JA

Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Contextual Info: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V

HM1-65162

Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
Contextual Info: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V

Contextual Info: HM-65162 ÌH HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS StdtlC RAM January 1992 Features Description • Fast Access Tim Max • Low Standby Current. 50nA Max

HM-6516-9

Abstract: 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9
Contextual Info: HM-6516 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low

Contextual Info: CMOS STATIC RAM 16K 2 KX8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized lo r fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)

a5324

Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
Contextual Info: HM-6516 TM 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low

8403602JA

Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
Contextual Info: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max

Contextual Info: CMOS STATIC RAM 16K 2 K X 8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized for fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)

6516

Abstract: 6516-9
Contextual Info: HM-6516 Semiconductor 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275^W Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of com plem entary MOS design techniques. This low

HM6516

Contextual Info: HM-6516 fü HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Description Features Low Power Standby. 2 7 5 Max Low Power O p e ratio n . 55mW/MHz Max Fast Access Time. . 120/200ns Max

HM-6516-9

Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
Contextual Info: HM-6516 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the

SMJ320C31

Abstract: SMJ320C30 SMJ320C30-40 238 pin PGA socket 41500
Contextual Info: SMJ320C30, SMJ320C31 DIGITAL SIGNAL PROCESSORS SGUS014B – FEBRUARY 1991 – REVISED JUNE 1996 2 D D D D D D D D D D – 55°C to 125°C Operating Temperature Range, QML Processing Processed to MIL-PRF-38535 QML Two 1K-Word x 32-Bit Single-Cycle Dual-Access On-Chip RAM Blocks

TAG 8442

Abstract: tag 8634 tag 8418 SPRU031D tag 8610 3055 smd smj320c31hfgm33 SMJ320C30 SMJ320C30-40 SMJ320C31
Contextual Info: SMJ320C30, SMJ320C31 DIGITAL SIGNAL PROCESSORS SGUS014B – FEBRUARY 1991 – REVISED JUNE 1996 2 D D D D D D D D D D – 55°C to 125°C Operating Temperature Range, QML Processing Processed to MIL-PRF-38535 QML Two 1K-Word x 32-Bit Single-Cycle Dual-Access On-Chip RAM Blocks

238 pin PGA socket

Abstract: SMJ320C31-33 5962-9205802 SMJ320C30 SMJ320C30-40 SMJ320C31 D1392 SMJ320C31GFAM33 SMJ320C3x SPRU031D
Contextual Info: SMJ320C30, SMJ320C31 DIGITAL SIGNAL PROCESSORS SGUS014B – FEBRUARY 1991 – REVISED JUNE 1996 2 D D D D D D D D D D – 55°C to 125°C Operating Temperature Range, QML Processing Processed to MIL-PRF-38535 QML Two 1K-Word x 32-Bit Single-Cycle Dual-Access On-Chip RAM Blocks

EH18

Abstract: HM-6516-9 hm6516-9
Contextual Info: HARRIS H M -6 5 1 6 S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power Standby. 275|iW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the

Contextual Info: HM-6516 HARRIS S S E M I C O N D U C T O R 2K x 8 CMOS RAM August 1996 Description Features • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low

L1129

Abstract: HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516 HM-6516-9 HM1-6516
Contextual Info: HM-6516 HARRIS æ S E M I C O N D U C T O R 2K March 1997 X 8 CMOS RAM Features Description • Low Power S tan db y. 275|aW Max • Low Power O p e ra tio n . 55mW /MHz Max • Fast Access T im e. 120/200ns Max

Contextual Info: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max.

IC cs 4852

Abstract: dt6116 S0244
Contextual Info: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:

DS01003

Abstract: idt6116s GQ-01 MA5S771 IDT6116L s116l B-116S b116s
Contextual Info: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION: