RAM 256X4 Search Results

KM424C64

Abstract: KM424C64P
Contextual Info: CMOS VIDEO RAM KM424C64 6 4 K X 4 Bit CMOS VIDEO RAM FEATURES GENERAL DESCRIPTION • Dual Port Architecture 64K x 4 bits RAM port 256 x 4 bits SAM port • Performance range: -1 0 -1 2 RAM access tim e t^Ac 100ns 120ns RAM access tim e (Icac) 25ns 30ns

REGULATOR S 812

Abstract: S-81250AG S81230AG S-2212R s812 S2212R S-81230AG
Contextual Info: SE IK O INSTRUMENTS U H fil D E I Ö1S3M43 Q D D D IU 2 | T-46-23-08 ’ S NON-VOLATILE MEMORY/NON-VOLATILE RAM f g g g ★Under development APPLICATIONS The non-volatile RAM NV RAM) is a non-volatile CMOS • Constants setting memory combining a static CMOS RAM and a non-volatile

Contextual Info: Xicnr Advance Information 1KBit X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 120 ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption — Active: 40 mA Max.

Contextual Info: w X22C12 1KB it X22C12 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability —Store Cycles: 1,000,000 — Data Retention: 100 Years * Low Power Consumption —Active: 40mA Max. — Standby: 100|jA Max.

Contextual Info: Jlaar X22C12 1KBit 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION * High Performance CMOS — 150ns RAM Access Time * High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40mA Max. — Standby: 100^iA Max.

Contextual Info: Advance Information 1KBit X iB B X22C12 ! 256x4 Nonvolatile Static RAM FEATURES DESCRIPTION • High Performance CMOS — 120 ns RAM Access Time • High Reliability — Store Cycles: 1,000,000 — Data Retention: 100 Years • Low Power Consumption — Active: 40 mA Max.

UM6612

Contextual Info: 4 Bit m icrocontroller Part No. D escription Page UM 6612 2K ROM , 256X4 RAM , 4X26 LCD, 16 I/O 4 b it u C . 3 UM 66P20 0.7K O TP R O M , 48X4 RAM , 12 I/O 4 b it u C . 24 1

KM424C257

Contextual Info: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual . Parameter Speed

16kx8 ram

Abstract: 8096 microcontroller features rom 1024 1024x8 MSM6411B 8096 microcontroller serial ports MSC62408 MSC6458 NS400N seg lcd driver rom 512x4
Contextual Info: • LINE-UP AND TYPICAL CHARACTERISTICS •- LINE-UP AND TYPICAL CHARACTERISTICS LOW POWER HIGH SPEED OLMS-50/60 SERIES PRODUCT NAME ROM OLMS-64/65 SERIES RAM POWER CONSUMP­ TION FEATURES RAM ROM MACHINE CYCLE FEATURES MSM6404 4000 x 8 256x4 952 nS I/O: 36

Contextual Info: MICROELECTRONICS ^ XL24410 Series fic*Jfene* in £ * 4-Bit Microcontroller KEY FEATURES OVERVIEW • Low voltage, single power source VDD “ 2.0 - 5.5V ■ Memory — XL24410:4096 X 8 bits ROM; 256 X 4 RAM — XL24810:8192 X 8 bits ROM; 256 X 4 RAM — RAM for LCD; 36 x 4 bits

Contextual Info: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual po rt Architecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual ' Parameter Speed

KM424C257

Contextual Info: KM424C257 CMOS VIDEO RAM 25 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual — _ Parameter Speed

KM424C257

Abstract: 424C257 Video RAM
Contextual Info: PRELIMINARY M424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual Port DRAM. It consists of a 2 5 6 K X 4 dynamic random

44795

Abstract: sd 13005
Contextual Info: HTG2AXX HOLTEK r r uC Voice with 1024-Pixel LCD Features 8-bit microcontroller • • • • • • • O p e ra tin g voltage: 2.4V~5.2V 8 K x l6 p ro g ram ROM 208x8 d a ta RAM 16/24 b id ire ctio n a l I/O lines 16-bit p ro g ram m ab le tim e r counter

Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

KM424C257

Abstract: 6520J 509Y EZ 742 vk 739 Video RAM
Contextual Info: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual P a rà ifü fë r - - — Speed

Contextual Info: . MICROCOMPUTERS R O M bit Data RAM/Work RAM (bit) LCD seg m en t Application M odel No. SM3503 SM3504 — LCD games SM3507 Calculators with clock Electronic organizers SM3508 SM3509 Application M odel No. SM3903 SM3905 SM565 Infrared remote controls i—

QL5064

Abstract: verilog code for fibre channel AA23 Signal Path Designer
Contextual Info: QL80FC - QuickFCTM QuickLogic QL80FC Programmable Fibre Channel ENDEC QL80FC - QuickFC FEATURES Dual Port SRAM • ANSI Fibre Channel FC compatibility ■ 22 blocks (total of 25,344 bits) of dual-port RAM ■ Data rates up to 2.5 Gb/s supported ■ Configurable as RAM, ROM or FIFO

Contextual Info: SONY C X K 5B 18120TM -12 65536-word x 18-bit High Speed Bi-CMOS Static RAM Description CXK5B18120TM is a high speed 1M bit Bi­ CM OS static RAM organized as 65536 words by 18 bits. Operating on a single 3.3V supply this asynchronous IC is suitable for use in high speed

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

Contextual Info: CAT22C12! CAT22C121 - Industrial Temperature 1024-BIT 256x4 NONVOLATILE CMOS STATIC RAM DESCRIPTION FEATURES The Catalyst CAT22C121 Nonvolatile Random Ac­ cess Memory (NVRAM) is a 1024-bit device with a 256x4 organization. It features fully static CMOS

51426-2

Contextual Info: September 1992 O K I Semiconductor M SM 514262-JS/ZS_ 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bit dynam ic RAM and a 512-word by 4-bit SAM. The RAM and SAM operate in d ep en d en tly an d asynchronously.

Contextual Info: A M I _ S6501 AMERICAN 1024 BIT 256x4 STATIC CMOS RAM Features General Description □ Ultra Low Standby Power The AMI S6501 family of 256 x 4-bit ultra low power CMOS RAMs offers fully static operation with a single