RAFT PD Search Results

Contextual Info: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark

DVD player optical pick up pin configuration

Abstract: Laser Head for CD ROM 66H-67H led ir sensor Laser Head for CD DVD optical pickup dvd write pick*up cd*rom DVD player optical pick up cd rom laser diode DVD photo diode array
Contextual Info: CL-CR3710 P RELIMINARY D RAFT Integrated AVI/ATAPI DVD Drive Manager Datasheet Features Overview The CL-CR3710 is Cirrus Logic’s high-integration, highperformance ATAPI DVD drive manager. It integrates all required components for a DVD loader for DVD players,

Laser Head for CD ROM

Abstract: disc DVD player chip circuit diagram DVD player optical pick up pin configuration LED IR SENSOR resolver sensor diode ba11 2ch DAC Cirrus CL-CS3712 optical Pick-Up head VGA DVD circuit diagram
Contextual Info: CL-CS3712 P RELIMINARY D RAFT Integrated AVI/ATAPI DVD Drive Manager Datasheet Features Overview The CL-CS3712 is Cirrus Logic’s high-integration, highperformance ATAPI DVD drive manager. It integrates all required components for a DVD loader for DVD players,

DVD photo diode array

Abstract: htc legend disc DVD player chip circuit diagram DVD player optical pick up dvd player cd photo diode dvd circuit DVD player optical pick up pin configuration CL-CS3712 DVD pickup circuit diagram 74 HTC 164 66H-67H
Contextual Info: CL-CS3712 P RELIMINARY D RAFT Integrated AVI/ATAPI DVD Drive Manager Datasheet Features Overview The CL-CS3712 is Cirrus Logic’s high-integration, highperformance ATAPI DVD drive manager. It integrates all required components for a DVD loader for DVD players,

Contextual Info: TELEPHONE- 97? 376-2822 (212)227-8005 FAX- (973) 376-8860 20 STERN AVE SPRINQRELO, NEW JERSEY 07081 USA 2N3738 MECHANICAL DATA Dimensions in mm 3.68 (0.145) raft. POWER TRANSISTORS NPN SILICON 6.35 (0.250) 8.64 (0.340) f -* 3.61 (0.142) 4.08(0.161) ratf ~

Contextual Info: KM29W040AT, KM29W040AIT FLASH MEMORY Document TitSe 512K x 8 bit NAND Flash Memory Revision History R evisio n No. H isto ry D raft Date R em ark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 1 Changed O perating Voltage 2.7V ~ 5.5V —> 3.0V ~ 5.5V

vl 700-04

Abstract: kl block TTL-40
Contextual Info: Prelim inary CMOS SRAM KM684002B, KM 684002BI D o cu m e n t Title 512K x8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Rev No. H isto ry D raft Data R em ark

Contextual Info: Prelim inary CMOS SRAM KM 68V4002B/BL, KM 68V4002BI/BLI D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory D raft Data R em ark R ev No.

Contextual Info: Preliminary KM616FU1010A Family CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision H istory R evisio n No. H isto ry 0.0 D raft D ate Initial Draft - Specify CSP type to distinguish between uBG A and FP BGA November 4, 1998

Contextual Info: Prelim inary CMOS SRAM KM644002B, KM 644002BI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (5V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory D raft Data R em ark R ev No.

CS707

Contextual Info: DO NOT SCALE DIMENSIONS IN MM. H • 11.70 6 .2 0 S' 2.00 L D 1 T Î .00 BLACK PART NUM B MATERIAL CUSTOMER DUG FOR REFERENCE ONLY . _ _ _ 0 « a raft M anuell« SSP CS707 3 fcft. H.C. (SED 2 1 ftJL * CCN AEV APPROVED 3 460 27 -1 ACETAL COLOUR - 0IS07S9S

SRAM sheet samsung

Contextual Info: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark

Contextual Info: KM736V689A 64Kx36 Synchronous SRAM Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM Revision History H isto ry D raft Date R em ark 0 .0 Initial d ra ft M ay. 19. 1998 P re lim in a ry 0.1 C h a n g e tOH Min v a lu e fro m 1.3 to 1.0 a t tCYC 5.0

6BV4002

Abstract: KM616BV4002
Contextual Info: KM616BV4002 BiCMOS SRAM D o cu m e n t Title 256K x16 Bit High Speed Static RAM 3.3V O perating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory D raft Data R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

KM616B4002

Abstract: SRAM sheet samsung 512X16 sram
Contextual Info: KM616B4002 BiCMOS SRAM D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial Tem perature Range. R evision H istory D raft Data R em ark R ev No. H isto ry Rev. 0.0 Initial release w ith Design T arget.

KM736V689A

Contextual Info: P R E LIM IN A R Y 64Kx36 Synchronous SRAM K M 736V689A Document Title 64Kx36-Bit Synchronous Pipelined Burst SRAM, 3.3V Power Datasheets for 10OTQFP Revision History Rev. No. H isto ry D raft Date R e m a rk 0 .0 Initial d ra ft M ay. 19. 1998 P re lim in a ry

684000BLP-7L

Abstract: 684000BLG
Contextual Info: CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0 .0 Initial D raft December 7, 1996 Advance 0.1 Revise - Changed O perating current by reticle revision Icc at write : 35m A - » 45m A Ic c i at read/write : 1 5 /3 5 m A ^ 10/45mA

Contextual Info: CMOS SRAM KM6164000C Family_ Document Title 256Kx16 bit Low Power CMOS Static RAM R evision No. H isto ry D raft Data R e m a rk 0.0 Initial d ra ft December 17, 1998 Prelim inary 1.0 Finalize April 17, 1999 Finalize The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

M684000

Abstract: 684000BLG
Contextual Info: K M 68 40 00 B Fami l y D o o u m CMOS SRAM e n t T itle 51 2 K x 8 bit Low Power C M O S Static RAM Revisio n N o . H istory D raft D a te Rem ark 0.0 Initial Draft December 7th 1996 Advance 0.1 Revise -C h a n g e d Operating current by reticle revision

Contextual Info: K M 6 8 V 2 0 0 0 , K M 6 8 U 2 0 0 0 Fami l y CM OS SRAM Dacuro ent T\t\ 2 56 Kx 8 bit Low Power and Low Voltage C M O S Static RAM R e v is io n N o . H is to ry D raft D ata R em ark 0.0 Design target January 30th 1997 Advance 0.1 Initial draft April 7th 1997

Contextual Info: 6 4 K x 36 S y n c h r o n o u s SR A M KM 7 3 6 V6 8 7 D o c u m e n t Title 64Kx36-Bit Sync hr ono us Burst S R A M , 3.3V Power Datasheets for 100TQFP Revision History R e v .N o . H Isto rv D raft D ate R e m ark Rev. 0.0 Initial draft Nov. 02. 1996 Preliminary

KM684000BLP-7

Abstract: KM684000BLP-7L A10Q KM684000BLR-5L PWR 700C KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L
Contextual Info: KM684000B Family CMOS SRAM Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History History Draft Date 0 .0 Initial D raft D e c e m b e r 7th 1996 0.1 R evise - C h a n g e d O p e ra tin g c u rre n t b y reticle re visio n Ic c a t w rite ; 3 5 m A —> 4 5 m A

Contextual Info: Preliminary CMOS SRAM KM68S2000 Family Document Title 256Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Initial D raft Draft Date Remark S e p te m b e r 3 0 th 1997 P relim in ary T h e attached d a ta sheets are p re pa red and ap pro ved by S A M S U N G E lectronics. S A M S U N G E le ctro nics C O ., LTD.

KM6164000B

Abstract: KM6164000BLI-L KM6164000BL-L
Contextual Info: C M O S SRAM K M 6164000B Fam ily D o c u m e n t Title 256K x16 bit Low P ow er C M O S Static RAM Revision H is to ry H isto ry D raft Data R em ark 0.0 Initial dra ft Ju n e 28 th 1996 A d va n ce 0.1 R evise - Die na m e ch a n g e ; A to B S e p te m b e r 19th 1996