RADAR PROJECT Search Results

radar sensor

Abstract: microwave RADAR motion sensors RADAR-IPM-165
Contextual Info: DATA SHEET Radar based motion detector module RADAR-IPM-165 Description Description Characteristic features • Universal HF-module K-Band Transceiver , without NF-Signal amplifier • Innovative Radar operating principle: • High sensitivity on slightest movement

radar warning receiver data

Abstract: modern and radar transmitters Radar Warning Receiver Radar airborne ericsson ericsson air mobile jamming radar project SAAB
Contextual Info: Press Release Ericssons multirole radar for the Gripen Fighter Aircraft ensure Information Superiority Ericsson have had continuously engagement, development and production of fighter radars since 1950´s. The Gripen radar designated PS-05/A, benefits from over 40 years experience of advanced airborne radar technology. The

uwb signal generator

Abstract: 5989-0327EN TEST OSCILLOSCOPE receiver satellite IQ demodulator UWb 5989-7819EN DSO7000 DSO8000 DSO90000A 5968-7141EN 5989-1679EN
Contextual Info: Agilent Infiniium Oscilloscopes and 89601A Vector Signal Analysis Software Data Sheet Wideband up to 13 GHz vector signal analysis and demodulation tools for applications including radar, satellite communications, UWB and MIMO. Modulated radar and wideband

ATC100A

Contextual Info: DISCRETE SEMICONDUCTORS DAT M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor BLL1214-35 PINNING - SOT467C FEATURES • High power gain

BLL1214-250

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Preliminary specification 2002 Jan 10 Philips Semiconductors Preliminary specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A FEATURES • High power gain

475 50K

Abstract: 475 50K 608 "475 50K" ATC100A BLL1214-35 ATC100B radar circuit component 1200 - 1400 MHz L-Band Applications
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLL1214-35 L-band radar LDMOS driver transistor Product specification 2002 Sep 27 Philips Semiconductors Product specification L-band radar LDMOS driver transistor FEATURES BLL1214-35 PINNING - SOT467C • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS DAT book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 PINNING - SOT502A

ATC200B

Abstract: BLL1214-250 MLD861
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Aug 06 2003 Aug 29 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES

ATC200B

Abstract: BLL1214-250 mld865
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLL1214-250 L-band radar LDMOS transistor Product specification Supersedes data of 2002 Feb 05 2002 Aug 06 Philips Semiconductors Product specification L-band radar LDMOS transistor BLL1214-250 FEATURES

Types of Radar Antenna

Contextual Info: Calibration of a Digital Phased Array for Polarimetric Radar Caleb Fulton and William J. Chappell Purdue University, West Lafayette, Indiana, 47906, USA Abstract — When an active phased array is used for polarimetric radar applications, the system must be calibrated to reflect

RSM3650

Abstract: radar sensor
Contextual Info: DATA SHEET Radar based motion detector module RSM3650 Description Characteristic features • Universal HF-module K-Band Transceiver , without NF-Signal amplifier • Innovative Radar operating principle: high sensitivity on slightest movement • Ideal for motion alarm unit: invisible mounting, safe against

smd transistor 6g

Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
Contextual Info: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

BLS7G2933S-150

Abstract: a 3150 data sheet JESD625-A
Contextual Info: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Radar pallet

Abstract: RO6006 radar amplifier s-band ATC100A ATC100B
Contextual Info: BLS6G2933P-200 LDMOS S-Band radar pallet amplifier Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev. 02 — 2 March 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Contextual Info: BLS7G3135LS-200 LDMOS S-band radar power transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 3100 MHz to 3500 MHz. Table 1.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 1 — 24 May 2011 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 2.9 GHz range. Table 1.

Contextual Info: BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 2 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance

Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

Contextual Info: BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 2 — 1 August 2013 Objective data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.

Contextual Info: BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 1 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

BLS6G3135-120

Abstract: BLS6G3135S-120 TRANSISTOR BV 32
Contextual Info: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 01 — 14 August 2007 Preliminary data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.

Contextual Info: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 4 — 23 September 2013 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

SOT608B

Contextual Info: BLS6G3135-20; BLS6G3135S-20 LDMOS S-Band radar power transistor Rev. 02 — 17 December 2008 Product data sheet 1. Product profile 1.1 General description 20 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1.