R502 Search Results

ZFV-SR10

Abstract: ZFV-A25 ZFV-A10 ZFV-A20 ZFVR5015 robot with camera and sensor smart sensors ZFV-R5025 ZS-XCN ZFV-R5010
Contextual Info: Smart Sensors with Ultra-High-Speed CCD Camera ZFV Series Ordering Information Sets of Sensor Head and Amplifier Unit Type Narrow View/Single Function Narrow View/Standard Wide View/Single Function Wide View/Standard NPN ZFV-R1010 ZFV-R1020 ZFV-R5010 ZFV-R5020

A2N transistor

Contextual Info: VSC1500 VI T E SS E S E M I C O N D U C T O R 30E D • R502331 00DQ27R S HIVTS VSC1500 High Speed GaAs - 1500 Gate Structured Cell Array T - y z - ib fo Features • Superior Performance: Supports clock rates up to 1.5 GHz in Mux/Demux applications • Proven GaAs E/D MESFET Process

Contextual Info: R5020308EJWA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current80 V(RRM)(V) Rep.Pk.Rev. Voltage300 t(rr) Max.(s) Rev.Rec. Time2.0u @I(F) (A) (Test Condition)314 @I(R) (A) (Test Condition)30 V(FM) Max.(V) Forward Voltage1.6

Contextual Info: AZ9405 10 AMP MINIATURE POWER RELAY FEATURES • • • • • • • 10 Amp switching capability SPST-N.O. and SPDT configurations 4 kV dielectric strength Epoxy sealed version available Type F wire available UL, CUR file E44211 TUV R50290833 CONTACTS

C459C

Abstract: RL119
Contextual Info: R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.

Contextual Info: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

R5021ANJ

Contextual Info: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.

STR451

Abstract: ic 501 str-451 ic501 C502 STR 451 L501 F-501 d508 SW501
Contextual Info: D150.D151 ,D152,D590 S5566B D501 2DL10 C151 0511 0,0022 STR-451 A A 0.022 IC 501 C509 0.0027/2KV D503 2DL10 D151 C224 X A D152 D502 2DL10 C152 C590 0.022 0.022 C508 f ] R501 C514 0.1/250V R502 R503 1/2W 1/2W T C502 220/500V 1 1 i1 1 1 _ 1 T 1 T RT502 i !

Contextual Info: R5021318FSWA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current175 V(RRM)(V) Rep.Pk.Rev. Voltage1.3k t(rr) Max.(s) Rev.Rec. Time1.5u @I(F) (A) (Test Condition)314 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.6

MR502

Abstract: BP107 R502 R503
Contextual Info: mmBSK R502_18/ R503 18 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, Fiance (43) 41.14.14 Fast Recovery Rectifier 175 Amperes Average 1400 Volts R502_ 18/R503_ 18

Contextual Info: GT-R502-64 Standard Digital Attenuators 8 BIT Applications • Unsurpassed Attenuation Linearity over Frequency & Temperature • 8 or 10 bit digital control • Smooth transition between states • Available in 32 or 64 dB Attenuation range • Remotely programmable parallel or serial control

r5021anx

Contextual Info: R5021ANX Transistors 10V Drive Nch MOSFET R5021ANX zDimensions Unit : mm zStructure Silicon N-channel MOSFET TO-220FM 10.0 φ3.2 4.5 8.0 1.2 1.3 14.0 2.5 15.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be r30V.

Contextual Info: Data Sheet 10V Drive Nch MOSFET R5021ANJ  Structure Silicon N-channel MOSFET  Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24

Contextual Info: DO -21 M icrosem i C atalog N um ber S tan dard S 5020PF S 5040PF S 5060PF S 5080PF R epetitive Peak Reverse V oltage • High Voltage, Low Leakage C urrent • Glass P assivated Die Reverse R5020PF R5040PF R5060PF R5080PF 200 400 600 800 • E conom ical Design

S5080

Abstract: S3414 S34120
Contextual Info: Standard Recovery Rectifiers P art Number S40A10 PPR54012 R304120 S304120 PPR54014 R3410 S3410 R3420 S3420 R3440 S3440 R3460 S3460 R3480 S3480 R34100 S34100 R34120 S34120 R34140 S34140 R34160 S34160 1N2786 1N2788 R5020PF S5020PF 1N2787 1N2789 R5040PF S5040PF

IT8512

Abstract: Sis 968 RTS5158 sis m672 G1410 SiSm672 sis 307elv sis307elv sis*307elv ME2N7002E
Contextual Info: 5 4 3 2 1 B test Modification P6. Prepare R502,C615 footprint and change R146 to 0603 for EMI request DACAVDD1 change source to VCC1.8 through a 3.3 ohm resistor R488 to solve CRT ripple issue D C P29. CON3 KB pin define follow PB2 Swap CP1,CP5,CP6,CP3,CP2,CP4 for layout smooth

BP107

Abstract: R502 R503
Contextual Info: R502_10/ R503 10 Pawerex, inc., 200 mills Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Fast Recovery Rectifier 100 Amperes Average 1200 Volts CASE NUMBER R 5 0

BP107

Abstract: R502 R503
Contextual Info: R502 R503 Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 13/ 13 F B S t f^BCOVBFV n Hectmer ^ 125 Amperes Average 1400 Volts R502_ 13/R503_ 13

Contextual Info: GT-R502-32 Standard Digital Attenuators 8 BIT Applications • Unsurpassed Attenuation Linearity over Frequency & Temperature • 8 or 10 bit digital control • Smooth transition between states • Available in 32 or 64 dB Attenuation range • Remotely programmable parallel or serial control

Contextual Info: UNISONICTECHNOLOGIESCO., LTD U74HCT00 www.unisonic.com.tw Copyright 2008 Unisonic Technologies Co., Ltd CMOS IC 1 of 4 QW-R502-175.A

diode B4E

Contextual Info: bME D m U • TETMbEl C R E DDDblMb 721 m P R X R502_ _ 18/ R503 18 X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 . Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POülEREX I NC

GT061832

Abstract: GTR-502
Contextual Info: GT-R502-32 Standard Digital Attenuators 8 BIT Applications • Unsurpassed Attenuation Linearity over Frequency & Temperature • 8 or 10 bit digital control • Smooth transition between states • Available in 32 or 64 dB Attenuation range • Remotely programmable parallel or serial control

Contextual Info: R5020818FSWA Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current175 V(RRM)(V) Rep.Pk.Rev. Voltage800 t(rr) Max.(s) Rev.Rec. Time1.5u @I(F) (A) (Test Condition)314 @I(R) (A) (Test Condition) V(FM) Max.(V) Forward Voltage1.6

Contextual Info: R5021ANX Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.21W ID 21A PD 50W TO-220FM (1)(2)(3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.