D501 Search Results

STR451

Abstract: ic 501 str-451 ic501 C502 STR 451 L501 F-501 d508 SW501
Contextual Info: D150.D151 ,D152,D590 S5566B D501 2DL10 C151 0511 0,0022 STR-451 A A 0.022 IC 501 C509 0.0027/2KV D503 2DL10 D151 C224 X A D152 D502 2DL10 C152 C590 0.022 0.022 C508 f ] R501 C514 0.1/250V R502 R503 1/2W 1/2W T C502 220/500V 1 1 i1 1 1 _ 1 T 1 T RT502 i !

D5012

Abstract: hf amplifier 100w
Contextual Info: TetraFET D5012UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND

50X50X10

Abstract: D5010L12S D5010L
Contextual Info: 50X50X10 mm ^ UNITEDPPQ 50.0*0 5 mm - 50 0 ' 0 5 mm Listed Model D5010L05B D5010M05B D5010H05B D5010L05S D5010M05S D5010H05S D5010L12B D5010M12B D5010H12B D5010L12S D5010M12S D5010H12S Bearing Type Rated Voltage VDC Ball 5 Sleeve Ball 12 Sleeve Rated

Contextual Info: TetraFET D5017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J DM • SUITABLE FOR BROAD BAND APPLICATIONS

hf amplifier 100w

Abstract: D5012UK D5012
Contextual Info: TetraFET D5012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL B 4 pls C G (typ) 2 3 1 A E D 5 4 I F FEATURES • SIMPLIFIED AMPLIFIER DESIGN N H M J K • SUITABLE FOR BROAD BAND

k 3918

Abstract: k 3918 fet D5013UK 3918
Contextual Info: TetraFET D5013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G DP PIN 1 SOURCE

hf amplifier 100w

Abstract: RF 3826 D5018UK
Contextual Info: TetraFET D5018UK METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P N I O H • SUITABLE FOR BROAD BAND APPLICATIONS

D5013

Abstract: F61074-V8207-Z000 epcos saw B30654-D5013-Q824
Contextual Info: RF modules for mobile communications Series/Type: D5013 The following products presented in this data sheet are being withdrawn. Ordering Code D5013Q824 Substitute Product Date of Withdrawal 2009-08-21 Deadline Last Orders 2010-05-31 Last Shipments 2010-08-31

D5011

Abstract: D5011UK
Contextual Info: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 50V – 500MHz SINGLE ENDED H FEATURES K M L J • SIMPLIFIED AMPLIFIER DESIGN E F • SUITABLE FOR BROAD BAND APPLICATIONS

D50100CDM

Abstract: YW396 SSD-D50100CDM YW396-06V
Contextual Info: D50100CDM LED DOT MATRIX MODEL : SSD-D50100CDM Seoul Semiconductor Co., Ltd. 148-29,Kasan-Dong, KeumChun-Ku, Seoul, Korea TEL : 82-2-3281-6269 FAX:82-2-858-5537 Web-site : www.seoul-semicon.co.kr 1.특성 FEATURES RED, GREEN, AMBER COLOR 50.0 * 100.0 (mm)

TUBE Light Choke Coil Winding

Abstract: Matsua Miniature Relay s3 12v D5011 12V 40A motor Relay led lamp circuit diagram CA1-DC12V-C CA1-DC12V-N transistor d5011 equivalent CA1-DC24V-N Chattering relay
Contextual Info: CA AUTOMOTIVE POWER RELAYS — SMALL SIZE, LIGHT WEIGHT AND COMPLETELY WATER TIGHT CA-RELAYS FEATURES mm inch 3. Low operaing power 1.4W type is available (1 Form A, 1 Form B) 4. Since the terminal arrangement complies with JIS D5011 B4-M1, commercial connectors are available

Contextual Info: TetraFET D5013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED C N typ  B A ! D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

k 3918

Abstract: uhf power transistor 50W D5013UK k 3918 fet
Contextual Info: TetraFET D5013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: Preliminary Data Sheet Microwave Ceramics 2-Pole Filter for W-LAN SMD B69812-N2457-D501 2.45 GHz Index Page 2 Page 3 Page 4 z z z z z z z z z z Application Features Component drawing Recommended footprint Characteristics Maximum ratings Typical passband characteristic

d5017

Abstract: D5017UK idq06 42 swg enamelled copper wire swg copper wire datasheet 25 32 FT-82
Contextual Info: TetraFET D5017UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J DM • SUITABLE FOR BROAD BAND APPLICATIONS

epcos saw

Abstract: gsm switch epcos
Contextual Info: EPCOS SAW Components SAW Frontend Module GSM 850 / EGSM / DCS / PCS / WCDMA 2100 Series/Type: Ordering code: D5013 D5013Q824 Date: Version: Dec 19, 2008 1 EPCOS AG 2008. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.

Contextual Info: TetraFET D5018UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O

LPD5010

Contextual Info: Document 820NR-1 Coupled Inductors D5010 ilable. ow ava new designs. n n io s r ed ver en free nded fo Improv not recomme free and halog ction. re d fun par ts a d by new lea e , fit and Thes ce in form la l p a fm. c re ti .c n re d501 They a which are ide

Contextual Info: RF modules for mobile communications Series/Type: D5013 The following products presented in this data sheet are being withdrawn. Ordering Code D5013Q824 Substitute Product Date of Withdrawal 2009-08-21 Deadline Last Orders 2010-05-31 Last Shipments 2010-08-31

Contextual Info: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A N & D  % C $ ! # " B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 50V – 500MHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F • SUITABLE FOR BROAD BAND APPLICATIONS

D5015M24S

Abstract: D5015 D5015H12B
Contextual Info: 50X50X15 mm U N IT E D *» 50 OiO 5 m m 15 0mm i <• Ol o o i t o o o n o U> Ch - I 3 3 3 3 £ Rated Voltage Rated Current Rated Power Speed Air Flow Static Pressure Noise Level VDC Amp Watts RPM CFM m]m-H20 dBA D5015L05B 0.20 1.00 4500 9.3 2.56 25.95 D5015M05B

D5018UK

Abstract: RF 3826
Contextual Info: TetraFET D5018UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B A E 2 pls C 1 K 2 3 4 G F 8 7 6 5 J Typ. GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 50V – 500MHz PUSH–PULL D M Q FEATURES • SIMPLIFIED AMPLIFIER DESIGN P O

d5017

Abstract: D5017UK
Contextual Info: TetraFET D5017UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J DM • SUITABLE FOR BROAD BAND APPLICATIONS

k 3918

Abstract: D5013UK
Contextual Info: TetraFET D5013UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS