R23 TRANSISTOR Search Results

2931a

Abstract: 2931A datasheet TLC2262 tesoro r4 4.7k iC5A 4024 c1470n r5110k ic8b
Contextual Info: RX Coil R27 5.1k R28 100k IC7a R29 100k C16 120p R3 20k C9 100p IC7b R19 82k C10 130p DISC 100k R1 1.2k R2 12k +V R23 100k C1 470n C2 47n All transistors common small-signal type, i.e., 2N3904 & 2N3906 C15 33nF R26 5.1k TX Coil R64 10k R69 27k C17 220nF R30

BY206 diode

Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
Contextual Info: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex

CN001

Abstract: CN006 CN003 cn004 ADL-CS346-A02 CN007 s video connector CONNECTOR 5 PIN pitch 2.54mm CN002
Contextual Info: CXA1585Q PCB Evaluation Board RI R2 R3 R4 R5 R7 R9 RIO R ll R12 R14 RI 6 RI 7 RI 8 R19 R20 R21 R22 R23 R25 R26 R27 R28 R29 R33 R34 R35 R36 R37 R38 R39 Fixed Registration Input resistance for Chroma 75 Output resistance for chroma at S input 10K Input resistance for Y

R24 marking

Abstract: 2SC3356 NPN R25 Transistor R25 r25 transistor SOT R25 marking r25 NPN R24 marking DATASHEET R25 2sc3356 r25 marking
Contextual Info: 2SC3356 2SC3356 SOT-323 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 20 V V(BR)CBO: Operating and storage junction temperature range Unit: mm TJ, Tstg: -55℃ to +150℃

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SC3356 TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECOTR FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) Collector current 0.1 A ICM: Collector-base voltage

SMD transistor r24

Abstract: marking r25 sot23 R25 SMD transistor SOT R23 SOT R25 R24 smd Transistor R25 smd R24 marking NPN R25 marking r25 NPN
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz

Contextual Info: Transistors IC SMD Type Product specification 2SC4226 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise and high gain. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz +0.05 0.1-0.01

marking r25 NPN

Abstract: NPN R25 transistor code R24 R24 marking code transistor SOT R23 npn marking r25 Transistor R25 R24 marking SOT R25 2SC4226W
Contextual Info: BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES 2SC4226W Pb z Low noise. z High gain. z Power dissipation. PC=150mW Lead-free APPLICATIONS z High frequency low noise amplifier. SOT-323 ORDERING INFORMATION Type No.

transistor code R24

Abstract: R24 marking code transistor Transistor R25 marking r25 NPN r25 transistor SOT R23 SOT R25 marking r25 NPN R25 R24 marking DATASHEET
Contextual Info: 2SC4226 NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier

transistor code R24

Abstract: R24 marking code transistor SOT R23 Transistor R25 r25 transistor transistor R24 r23 transistor SOT R25 2SC3356W R24 transistor
Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC3356W FEATURES z Low noise and high gain: NF=1.1dB TYP, Ga=11dB TYP. @VCE=10V,IC=7mA,f=1.0GHz z Pb Lead-free High power gain:MAG=13dB TYP. @VCE=10V.IC=20mA,f=1.0GHz APPLICATIONS

2SC3356

Abstract: R25 2sc3356 marking r25 NPN 2SC3356-T1B NE85633 PU10209EJ02V0DS
Contextual Info: NPN SILICON RF TRANSISTOR NE85633 / 2SC3356 NPN EPITAXIAL SILICON RF TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD FEATURES • Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz • High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

3 pin mini mold transistor

Abstract: R25 TRANSISTOR r25 marking mini mold transistor 25 transistor r24 2sc4226 2SC4226-T1 transistor marking T2 amplifier TRANSISTOR 12 GHZ r23 transistor
Contextual Info: DATA SHEET - SILICON TRANSISTOR 2SC4226 H IG H FREQ UENC Y LOW NO ISE A M P L IF IE R NPN SILICO N EPITAXIAL TR A N S IS T O R SU PE R M INI M O LD DESCRIPTION

MMBT4148

Abstract: SANYO 16AQU10M MMBT4148SE step-up switching 3A 16AQU10M MAX1513 MAX1513EVKIT MAX1514 MAX1514ETP JMK212BJ106MG
Contextual Info: 19-3525; Rev 0; 11/04 MAX1513 Evaluation Kit The MAX1513 evaluation kit EV kit is a fully assembled and tested surface-mount circuit board that provides voltages and features required for active-matrix, thinfilm transistor (TFT), liquid-crystal displays. The EV kit

SW-DIP-2

Abstract: UPA75V SW-DIP2 balanced microphone schematic SW-DIP-4 SW-DIP4 4570 upa75 c603 transistor microphone Preamp schematic
Contextual Info: 1 THAT Corporation Design Note 109 Microphone pre-amp using a THAT 120 transistor array The high-quality microphone preamp shown in the accompanying schematic uses a THAT120 with two transistors paralleled on each half of the differential input. Q1A and Q1B is a general purpose matched pair configured as current sources, which bias

zn21

Abstract: Transistor R25 r23 transistor zn15 ZN27 R26 transistor R13/r25 transistor
Contextual Info: GFC1020A GFC1020A GFC1020A 32-BIT BARREL SHIFTER GENERAL DESCRIPTION: THE GFC1020A MEGAFUNCTION PERFORMS A 32-BIT END—AROUND SHIFT, OR BARREL SHIFT. THERE ARE FIVE CONTROL LINES SI, S2 , S4 , S8, AND S16 TO DETERMINE HOW MANY PLACES TO THE LEFT THE 32-BIT INPUTS (R31 THROUGH RO) WILL BE SHIFTED AT THE

AN9637

Abstract: Mancini HFA3102 analog voltmeter 1N4148-D4 1N4148 1N5817 HA5020 HA5024 HA5170
Contextual Info: Harris Semiconductor No. AN9637 Harris Linear August 1996 Simple Phase Meter Operates to 10MHz HA5024, HFA3102 Author: Ronald Mancini Introduction tailed pairs that function as matched, high-speed comparators. The bases of the reference transistors in the comparators connect to ground, so the input signals must use a

GE 2646

Abstract: 2SC3356 r25 CD/GE S 2646
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS T he 2 S C 3 3 5 6 is an NPN silico n ep ita xia l tra n sisto r d e sig n e d for low Units: mm noise a m p lifie r at VH F, U H F and C A T V band.

2SC4226-T1

Abstract: 2SC4226-T1-A ne85630 NE85630-A 2SC4226T1a transistor s2p Transistor R25 NE85630A 2SC4226-A r23 transistor
Contextual Info: A Business Partner of Renesas Electronics Corporation. Preliminary NE85630 / 2SC4226 Data Sheet R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor

MAX17122

Abstract: max17122etl GRM32ER61E226M IC power 22A Regulator switching regulator 12v MAX17122e tv lcd Schematic Power Supply using mosfet tv lcd Schematic Power Supply schematic 12v 3a power supply without transistor and ic TOSHIBA TV IC regulator
Contextual Info: 19-5089; Rev 0; 12/09 MAX17122 Evaluation Kit The MAX17122 evaluation kit EV kit is a fully assembled and tested surface-mount PCB that provides the voltages and features required for thin-film transistor (TFT), liquidcrystal display (LCD) TV panels. The EV kit includes a

Operational Transconductance Amplifier pspice

Abstract: AB-179 OPA 279 R232T r23 transistor
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

transistor NEC D 588

Abstract: IC nec 555 nec d 588 marking 544 low noise amplifier ZS12 nec 501 t nec marking 2sc3356 R25 2sc3356
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3356 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.

OPA 279

Abstract: Operational Transconductance Amplifier pspice GLC40 AB-179
Contextual Info: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132

2N2222

Abstract: TIP 22 transistor 0R230 k 3683 transistor r23 transistor
Contextual Info: MT91600 Programmable SLIC Data Sheet Features April 2004 • Transformerless 2 W to 4 W conversion • Controls battery feed to line • Programmable line impedance • Programmable network balance impedance • Off-hook and dial pulse detection • Ring ground over-current protection

Contextual Info: MT91600 Programmable SLIC Preliminary Information Features • • • • • • • • • DS5057 MT91600AN 28 Pin SSOP Package -40°C to +85°C Description The Mitel MT91600 provides an interface between a switching system and a subscriber loop, mainly for