R10 TRANSISTOR Search Results

1BW TRANSISTOR

Abstract: transistor BU 110 diode sg 69
Contextual Info: F 200 R10 K EUPEC SEE D 34G32T7 0000244 bl3 « U P E C Thermische Eigenschaften Thermal properties Rtwc DC, pro Baustein / per module 0,088 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VCES Maximum rated values 1000 V 200 A RthCK

AD780AN

Abstract: AD680 AD780 AD780AR AD780BN AD780BR AD780CR LT1019 Ad780ar listed time AD780BRZ
Contextual Info: 2.5 V/3.0 V High Precision Reference AD780 FEATURES FUNCTIONAL BLOCK DIAGRAM +VIN R10 R16 00841-001 Pin programmable 2.5 V or 3.0 V output Ultralow drift: 3 ppm/°C max High accuracy: 2.5 V or 3.0 V ±1 mV max Low noise: 100 nV/√Hz Noise reduction capability

GRM32ER71H475KA88L

Abstract: LM3431 diode ss24 GRM32RB1 2n7002k 2k UUD1H100MCL AN1764 30046 fet 2n7002K C2012X7R1A475M
Contextual Info: National Semiconductor Application Note 1764 Allan Fisher January 10, 2008 Introduction By default, the LM3431 evaluation board has channels 1-4 enabled. To drive fewer channels, first remove the sense resistor or NPN on the channel to be disabled R10-R13 or Q2Q5 . Then refer to Table 3 and make any other required

BY206 diode

Abstract: mosfet triggering circuit for inverter 12V ENERGY LIGHT CIRCUIT DIAGRAM thyristor capacitive discharge ignition xenon tube DIAC 502 TRANSISTOR tr4 ED69 diode by206 FX1589
Contextual Info: Design Note 31 Issue 2 November 1995 Design Note 31 Issue 2 November 1995 High Voltage Generation for Xenon Tube Applications R24 T1 D4 C13 C12 C10 C11 T2 TH1 R23 D5 D6 +12V R7 C2 R10 R11 R13 R1 R4 Introduction The ignition timing lights in common use range from simple neon to complex

Contextual Info: Data Sheet 2.5 V/3.0 V High Precision Reference AD780 FEATURES FUNCTIONAL BLOCK DIAGRAM +VIN NC 2 7 AD780 R10 R11 NC 1 6 VOUT 5 TRIM R13 Q6 Q7 R16 R5 R14 TEMP 3 R15 R4 4 GND NC = NO CONNECT 8 O/P SELECT 2.5V – NC 3.0V – GND 00841-001 Pin programmable 2.5 V or 3.0 V output

220uF

Abstract: dual 2N3904 NPN Transistor 4k resistor 220uf, 25v electrolytic capacitor Q2 220uF 10v 220uF 10v 2N3904 capacitor c1 220uF 1k ohm resistor capacitor 220uf/35v
Contextual Info: CPE modem 24V INPUT C2 1uF 10V 13 R1 200k 2 20 VP C4 220uF 35V CA D1 CMPSH-3 19 VL BST ILIM COMP C1 8.2nF DH 18 17 16 LX C3 0.1uF T1 1:1 Lpri = 27.2uH VP3-0084 N1A 1/2 NDS 9956A R2 22 1,2 DL VL U1 MAX1865T R10 100k GND OUT 1 POK FB B2 15 14 N1B 3,4, 9,10 11,12

capacitor 10uF 50V

Abstract: ceramic capacitor 0.01uf ELECTROLYTIC capacitor, .10uF 50V ST232CN panasonic ceramic resonator capacitor 0.01uF 50V panasonic resistors capacitor 22uf/50v mc4004a resistor 50k
Contextual Info: STMicroelectronics : EVALPRACTISPIN Quantity Reference 2 C1, C4 2 C11, C12 1 C2 5 C3,C5, C6, C7, C8 2 D2, D3 1 WJ1 1 JP1, JP2 1 J3 1 P1 1 Q1 1 R1 1 R2 1 R18 2 R9, R10 2 R11, R12 1 R19 1 SW1 1 U1 1 U2 1 Y1 2 Part Description 0.1uF 50V ceramic capacitor 0.01uF 50V ceramic capacitor

capacitor 100nf 50v 0805

Abstract: KMG 400V Nippon Chemi-Con KME fi324 Chemi-Con LXY vogt transformer NIPPON KME nippon kmg Vogt Ferrite nippon lxY
Contextual Info: STEVAL-ISA020V1 Item 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Reference C2,C1 C3 C4 C5,C13 C6 C8 C9,C10 C11 C12 D1 D3,D2 D5 D7 L1 Q1 R1 R3 R5 R8 R10,R9 R11 R12 R13 R14 R15 R16 R18,R17 R20 R21 T1 U1 U2 U3 Qty Variant Value

Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network

R758

Abstract: 78R12
Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network

78R12

Abstract: transistor r10 R758 0610 resistor chip
Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network

Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network

R758

Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This

Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 16 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This network

Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This

Contextual Info: 1422 Vishay Foil Resistors Bulk Metal Foil Technology 10 Pin Transistor Outline Hermetic Resistor Network The 16 Pin TO-8 package is suitable for ladder networks up to 12 bits and other more complicated networks. It is also a good choice when power dissipation is a consideration. This

ATF-10736

Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
Contextual Info: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t

AP002

Contextual Info: AP002 Designing Battery Chargers using the AQT120 The AQT120 is a controller for implementing a constant current/constant voltage supply suitable for charging batteries to a final voltage at a fixed current. The AQT120 is intended to drive an external PNP pass transistor to implement a lowest-cost system for

FMMT549

Abstract: IRLZ34 gm100
Contextual Info: AP002 Designing Battery Chargers using the LDS120P The LDS120P is a controller for a constant current/constant voltage supply suitable for charging batteries to a final voltage at a fixed current. The LDS120P is intended to drive an external PNP pass transistor to implement a system for charging Lithium Ion Li Ion ,

Contextual Info: R_10032 CA-330-11; LDMOS bias module Rev. 1.0 — 24 July 2012 Report Document information Info Content Keywords LDMOS, bias Abstract This report describes a bias module for LDMOS RF power transistors. It provides a low-noise bias supply, temperature compensation, and a very

transistor C456

Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and

2907A PNP bipolar transistors

Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
Contextual Info: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular

HCFT

Abstract: LQ12D011 DH758 D1021 D1022 D1023 D1024 DC AC inverter
Contextual Info: LQ12D011 TFT-LCD Module LCD Data Sheet FEATURES DESCRIPTION • Display Diagonal: 11.8" The SHARP LQ12D011 Color TFT-LCD module is a color active matrix Liquid Crystal Display LCD incorporating amorphous silicon Thin Film Transistor (TFT). The module is composed of a color TFT-LCD

CBCX69

Abstract: CBCX68 marking code r10 surface mount diode CBCX69-16
Contextual Info: CBCX68 SERIES NPN CBCX69 SERIES PNP SURFACE MOUNT COMPLEMENTARY SILICON SMALL SIGNAL TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBCX68 and CBCX69 series types are complementary silicon transistors manufactured by the epitaxial planar