R 824 TRANSISTOR Search Results

RAYTHEON

Abstract: LL1608-FH5N6S RMPA0913C-58
Contextual Info:
  R aytheon Commercial E lectronics RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier Description The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/ CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip

transistor packing code M.R

Abstract: SOT-25 RF detect TS823 TS825
Contextual Info: TAIWAN E SEMICONDUCTOR pb RoHS CO M PLIANCE TS823/824/825 Series Microprocessor Supervisory Circuit with Watchdog Timer & Manual Reset SOT-25 5 4 1 23 General Description The TS823/824/825 fam ily allows the user to customize the CPU monitoring function without any external

Contextual Info: N AMER PHILIPS/DISCRETE b^E I> • APX bbS3T31 QD3D247 bl2 BGY95A/B UHF AMPLIFIER MODULE The BGY95 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 7.5 V power supply. The module consists of three npn silicon planar transistors mounted on a metallized ceramic substrate,

SKY85703

Abstract: SKY77758
Contextual Info: New Products Spring 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 5 Smart Energy Solutions . . . . . . . . . . . . . . . . . . 7

Contextual Info: ANALOG DEVICES FEATURES Single-Supply Operation: 3 to 30 Volts Very Low Input Bias Current: 2 pA Wide Input Voltage Range Rail-to-Rail Output Swing Low Supply Current: 500 |aA/Amp Wide Bandwidth: 2 MHz Slew Rate: 2 V / jas No Phase Reversal APPLICATIONS Photo Diode Preamplifier

Contextual Info: N AMER PHILIPS/DISCRETE APX bb53T31 0Q3055b bSS BGY96A/B b'lE D UHF AMPLIFIER MODULE The BGY96 is a three-stage UHF amplifier module designed primarily for mobile transmitting equipment operating from a nominal 9.6 V power supply. The module consists o f three npn silicon planar transistors mounted on a metallized ceramic substrate,

SN83

Abstract: d603
Contextual Info: RMPA0959 CDMA and CDMA2000-1X PowerEdge Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a

CDMA2000-1X

Abstract: CDMA2000-1XRTT RMPA0959
Contextual Info: RMPA0959 CDMA and CDMA2000-1X Power Amplifier Module General Description Features The RMPA0959 power amplifier module PAM is designed for cellular band AMPS, CDMA and CDMA2000-1X applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a

RM806-14

Abstract: IS-136 RM806
Contextual Info: RM806 Power Amplifier Module 3–4 V for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount module designed for Time Division Multiple Access (TDMA) and Advanced Mobile Phone Service (AMPS) mobile units operating in the 824-849 MHz cellular bandwidth.

IS-136

Abstract: RM806 ESD process
Contextual Info: RM806 Power Amplifier Module for TDMA AMPS 824–849 MHz The dual-mode RM806 Power Amplifier (PA) is a fully matched, 6-pin, surface mount Distinguishing Features module designed for Time Division Multiple Access (TDMA) and Advanced Mobile • Low voltage positive bias supply

PID code for DC Motor control lpc1768

Abstract: ARM LPC1768 assembly codes LPC1768 21041AA lpc1768 qei encoder language example sch 5127 RBS ericsson software UM10360 LT 5212 lpc23xx
Contextual Info: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 00.07 — 31 July 2009 R R R LPC17xx User manual D D D UM10360 D FT FT A A R R D D D R A FT D R A Document information

821A

Abstract: W79E82X W79E825ASG W79E821ADG W79E823ADG W79E824ADG W79E825ADG FC40H W79E821 PWM17
Contextual Info: W79E825/824/823A/822A/821A Data Sheet 8-BIT MICROCONTROLLER Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

7660 harris

Abstract: transistor 2n 3906 -338 2N3906 MAX850 SOIC-16 TQ9142 TQ9142B rf power amplifier 850 MHZ Dual PNP Transistor diode 824
Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , I N C . WIRELESS COMMUNICATIONS TQ9142B VD2 TQ9142 VD3 ZO = 50Ω RF OUT RF IN VG1 VG2 VG3 High-Efficiency 3-Stage AMPS Power Amplifier IC GND The TQ9142B is a highly efficient 3-stage power amplifier developed for handsets and

sky77814

Abstract: SKY85309 SKY77627-11 SKY77621-31
Contextual Info: New Products Winter 2014 Table of Contents New Products Featured New Products by Market Smartphones, Handsets, and Tablets . . . . . . . 3 Consumer Networking . . . . . . . . . . . . . . . . . . 4 Wearables . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

BGY110A

Abstract: 40801 NPN planar RF transistor 824 transistor
Contextual Info: D EVELO PM EN T DATA 41E: • T llG Ô E b 0026457 h B IP H IN 11 BGY110A Jl T h is data sheet c o n ta in s a dvance in fo rm a tio n a n d sp e cific atio n s are sub{ect to cha nge w it h o u t notice. P H IL IP S INTERNATIONAL T -7 Y ~ 0 M UHF A M P L IF IE R M O D U L E

2SC2120

Abstract: 2sC2120 transistor Audio Power Amplifier TOSHIBA 2SC2120-Y 2SC2120-O 2SC2120-0 2SA950 2SC2120 0 transistor 2sc2120 ic 824 J
Contextual Info: J D > N P N I^ ICON o NPN 9 5/ 7 ^ 5 JW B h EPITAXIAL > 9 ^ TRANSISTOR r % P C T B S C (P C T PROCESS 2SC 2120 A udio Pow er A m p l if i e r A p p l i c a t i o n s V* : hpBj = 100~ -320 2SA950 ¿ a y / J / y i i J K i N t o 1W O u t p u t A p p l i c a t i o n s

Contextual Info: CDP1824/3 iS ï h a r r i s 1 Q 2 4 ^ s/ 3 S E M I C O N D U C T O R High-Reliability CM O S 32-Word x 8 Bit Static Random-Access Memory February 1992 Features Description • Access Time: 610ns.e v D0 = 5V 320ns. VOD = 10V

Contextual Info: W79E825/824/823/822 Data Sheet 8-BIT MICROCONTROLLER Table of Contents1 2 3 4 5 6 GENERAL DESCRIPTION . 4 FEATURES . 5

MPD400

Abstract: MPD200
Contextual Info: 1N4156 1N4157 1N4453 1N4829 1N4830 1N5179 MPD200 MPD300 MPD400 STABISTOR DIODES High Speed, Multi-Pellet Computer and General Purpose DESCRIPTION Offering one to four d io d es in series, these devices are useful as signal lim iters, level shifters in transistor logic, m eter

Contextual Info: RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes ■ 39% CDMA/WCDMA efficiency at +28 dBm average output power ■ 52% AMPS mode efficiency at +31 dBm output power

Contextual Info: RMPA0967 Cellular CDMA, CDMA2000-1X and WCDMA Power Edge Power Amplifier Module Features General Description • Single positive-supply operation with low power and shutdown modes The RMPA0967 power amplifier module PAM is designed for cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and

Contextual Info: N AMER PHILIPS/DISCRETE b^E ]> bb53T31 DDSfllflS T7S I IAPX 2K U y4t> A SILICON SMALL-SIGNAL TRANSISTOR NPN small-signal transistor, in a plasticTO-92 envelope. It is intended for use in audio amplifier driver stages and low speed switching applications etc.

DTA143XS

Contextual Info: h DTA143XU/DTA143XK/DTA143XS/DTA143XF DTA143XL/DTA143XA/DTA143XV > v ^ £ / T ransistors D TA 143X U /D T A 143XK /D TA 143XS D TA 143XF/D TA 143XL/D TA 143XA DTA143XV h7>y'X^ }£iaF*3loh7>y'X^ h -7 > y 7. £ X -f " j /Transistor Switch Digital Transistors (Includes Resistors)

mj10004

Contextual Info: O D E 'ì a b T SGS-THOMSON IWMOTOWS S G i • MJ10004/ 4P/4PFI MJ10005/5P/5PFI S- TH OM SO N 3 DE » EPITAXIAL PLANAR NPN DESCRIPTION The MJ10004/5, MJ10004P/5P and MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated