R 2M 25 Search Results

LT 5265

Abstract: PAL16R8A PAL16L8A PAL16R4A-2
Contextual Info: PALI 6L8AM, PAL16L8A-2M, PAL16R4AM, PAL16R4A-2M PAL16R6AM, PAL16R6A-2M, PAL16R8AM, PAL16R8A-2M STANDARD HIGH-SPEED PAL CIRCUITS D 2 7 0 5 . F E B R U A R Y 1 9 8 4 - R E V IS E D A U G U S T 1 9 8 9 Choice of Operating Speeds High Speed, A Devices . . . 25 MHz

gm72v16821ct

Abstract: GMM2645233CTG GM72V661641 GMM2734233CNTG GMM26416233CNTG gm72v16821dt GMM2644233CN GMM2644233 GM72V1682
Contextual Info: LG Semicon PRODUCT INDEX • 16M SDRAM GM72V16421CT 2M x 4 Bit, 2Bank, 3.3.V. 4K R e f- -25 GM72V16421DT 2M x 4 Bit, 2Bank, 3.3.V, 4K R e f-46 GM72V16821CT 1M x 8 Bit, 2Bank, 3.3.V, 4K R e f- 67

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The KM29N16000ET/R is a 2M(2,097,152)x8 bit NAND • Wide Temperature Operation : -25'C - +85C • Organization

Contextual Info: Compact Flash Mem ory Card Connectors SERIES 5610 CONNECTOR s \ y $ '—/ > K ^"7H =2m m H ea d er/E je c to r Assembly H = 2m m 44.8 SECT C -C EJECTOR 6 Compact Flash Mem ory Card Connectors SERIES 5610 X & Z F X y H =2m m H e a d er/E je c to r Assembly H = 2m m

Contextual Info: Table of Contents Alphanumeric In d ex . DRAM Module Num bering . Quality and R eliability. Part Number Organization Features IBM11S1320LP. . 1M IBM11S2320LM. .2M IBM11S2320LP. .2M

C6V2 ST

Abstract: ST c6v8 c5v6 st C5V1 ST zener c15 ST C4V3 ST C9V1 ST C4V7 ST c5v1 C5V6
Contextual Info: BZV49 SERIES ELECTRICAL CHARACTERISTICS at Tamb= 25°C . Zener Voltage Vz at lz=2m A Type VOLTS BZV49: Nom . Tem perature Coefficient Sz at lz=2m A m V/°C Differential Resistance rz at lz=2m A a Reverse Current lRat V R HA V Min. Max. M ax. Min Max Max Max

A1967

Contextual Info: 80-PIN FLASH SIMMS STI29082-90 T/G (R/S) 2M X 32 Bits Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • • • The Simple Technology STI29082-90(T/G)(R/S) is a 2M x 32 bits flash memory module. The Simple Technology STI2908290(T/G)(R/S) consists of four 2M x 8 bits CMOS flash memory

PAL16R8A

Contextual Info: 0 ^ 1 7 2 5 G O T b lS T 4 • P A L16 L8 A M , P A LI 6L8A-2M, P A L16 R 4 A M , PAL16R4A-2M P A L1S R 6 A M , PAL16R6 A-2M , P A L16 R 8 A M , PAL16R8A-2M STAN DARD HIGH-SPEED PAL CIRCUITS D2705, FEBRUARY 1984-REVISED AUGUST 1989 J OR W PACKAG E C h o ic e of O peratin g S p e e d s

E6C3-AG5C-c

Contextual Info: E6C3-AG5C-C 720P/R 2M | OMRON Industrial Automation Global Home Our Strengths Products Technical Support Sitemap Global Network About Us Contact What's New Home > Products > Sensors > Rotary Encoders > Absolute > E6C3-A > E6C3-AG5C-C 720P/R 2M Sensors Rotary Encoders

CDC2509

Abstract: M375S203CT
Contextual Info: Preliminary KM M375S203CT SDRAM MODULE KMM375S203CT SDRAM DIMM 2M x72 SDRAM DIMM with PLL & Register based on 2M x8, 4K Ref., 3.3V S ynchronous DRAMs with SPD FEATURE G E N E R A L DESCRIPTION The Samsung KMM375S203CT is a 2M bit x 72 Synchronous • Performance range

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M X 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply The K M 29N 16000E T/R is a 2M (2,09 7 ,1 5 2 )x8 b it N AND • W ide Tem perature O peration : -25'C - +85'C

CDC2509

Contextual Info: Preliminary KMM378S203CT SDRAM MODULE KMM378S203CT SDRAM DIMM 2M x72 SDRAM DIMM with PLL & R egister based on 2M x8, 4K Ref. 3.3V S ynchronous DRAM s FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM378S203CT is a 2M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung

D0241_S4

Contextual Info: KM29N16000ET/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory Extended Temperature Product FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Wide Temperature Operation : -25'C - +85'C • Organization - Memory Cell Array : (2M +64K) x 8 bit - Data Register

Contextual Info: PRELIMINARY KM29V16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory GENERAL DESCRIPTION FEATURES • Single 3.3 - volt Supply The KM29V16000AT/AR is a 2M 2,097,152 x8 bit NAND • Organization - Memory Cell Array : (2M +64K)bit x 8bit cell provides the most cost-effective solution for the mass

D240C

Contextual Info: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte

km29n16000at

Abstract: c60h - dc
Contextual Info: PRELIMINARY KM29N16000AT/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization The KM29N16000AT/R is a 2M 2,097,152 x8 bit NAND Flash memory with a spare 64K(65,536)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

A0-A19

Contextual Info: SL29081-90 T/G (V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (5V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29081-15(T/G)(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module

Am29F080

Contextual Info: SL29081-15 T/G (V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (5.0V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29081-15(T/G)(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module

Contextual Info: STI642000AD2 168-PIN DIMMS 2M X 64 DRAM DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC STI642000AD2-60 60ns 20ns 110ns STI642000AD2-70 70ns 25ns 130ns The Simple Technology STI642000AD2 is a 2M bi‘ x 64 Dynamic R A M high density memory module. The Simp e Technology

12345678901

Contextual Info: Surface Mount NTC Thermistors NTHC Series FEATURES CHARACTERISTICS S e rie s NTHC 04 NTHC 06 E IA S ize 0402 0603 0805 R e s is ta n ce R a ng e + 25 o C * 1000 O hm ~ 2M egO hm 3 0 O h m ~ 1 5 0 KO h m 40 O hm ~ 2M egO hm R e s is ta n ce To le ra n ce (+ 2 5 o C )*

AMD 2m flash memory

Contextual Info: SL29082-90 T/G (V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (5.0V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29082-90(T/G)(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module

MSB64DA-1

Abstract: led rood
Contextual Info: T7ÏÏ r^ t MSB64DA-1 Ai 2m m x 5m m RECTANGULAR R ED LED LA M P D E SC R IPT IO N MSB64DA-1 is an ultra high brightness output red GaAJAs LED lam p encapsulated in a 2m m x 5m m flangeless rectangular bars with red diffused lens. • • • A BSOLUTE M A X IM U M R A TIN G S

AMD 2m flash memory

Abstract: edge connector 22 pin
Contextual Info: SL29082-90 T/G 4(V/R/S) Preliminary† 2M X 32 Bits (8MB) Flash Memory Module (3,3V Only) FEATURES GENERAL DESCRIPTION • • • • • • The SiliconTech SL29082-90(T/G)4(V/R/S) is a 2M x 32 bits flash 80-pin Single In-line Memory Module (SIMM). This module

HY5118160

Contextual Info: HYUNDAI HYM536223 X-Series 2M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536223 is a 2M x 36-bit Fast page m ode CMOS DRAM m odule consisting o f fo u r HY5118160 in 42/42 pin SOJ o r 42/50 pin TSOPII and tw o HY514403B in 24/26 pin SOJ o r TSOPII on a 72 pin glass-epoxy printed circuit