QD32 Search Results

Contextual Info: N AUER PHILIPS/DISCRETE h^E D m bbSB'lBl QD32i47i4 2^7 APX OM2050 _ / v _ HYBRID INTEGRATED CIRCUIT VHF/UHF WIDE-BAND AMPLIFIER Two-stage wide-band amplifier in hybrid integrated circuit technique on a thin-film substrate, intended

HA7-5130

Contextual Info: HARRIS SEMICQND SECTOR 4GE D • 4305571 QD32DS4 1 ■ H A S T-l 9 - C U - l O f f l H A R R i e H A - 5 1 3 / 3 5 Precision Operational Amplifier, August 1991 Features Applications • Low Offset Voltage . 10jjV

6-32UNC-2A

Abstract: BGY885B DIN45004B
Contextual Info: N AUER PHILIPS/DISCRETE bTE D • bbSB^Bl QD32537 2TD H A P X Philips Semiconductors Preliminary specification CATV amplifier module FEATURES BGY885B PINNING - SOT115J2 • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation

KMZ10B

Abstract: SOT195 Magnetic Field Sensor 0032L
Contextual Info: Philips Semiconductors ^ £ 3 ^ 3 1 QD32f c. 3b Product specification IAPX SMS KMZ10B Magnetic field sensor N AMER DESCRIPTION P H IL b^E IPS/DISCRETE D PIN CONFIGURATION The KMZ10B is a sensitive magnetic field sensor, employing the magneto-resistive effect of thin film

AXP 188 ba

Abstract: 21071-DA 2mb1100 AXP 188 IC 5188b RSAD 5111 1M 21071-BA 82378IB 21071AA d327c
Contextual Info: m DECchip 21071-AA, 21072-AA Core Logic Data Sheet m A p ril 1994 21071-AA, 21072-A A Features: • Supports the entire fam ily of the DECchip 21064 Alpha AXP m icroprocessors • DECchip 21071-AA: 128-bit cache/64-bit memory • DECchip 21072-AA: 128-bit cache/128-bit

cx2812

Abstract: CX-2812 CX171 CX174 LA3122 CX87 CX134 cx59 st7033 cx109
Contextual Info: A B C D E XREF=2/3E ADDR3 XREF=2/3E ADDR2 LAD[31:0] XREF=2/1D,9/1E,12/1E XREF=13/3A,15/1C MASTERCLK AD2 105 AD3 114 AD4 AD5 CPU_ACK_N XREF=2/1A,13/2E 93 CPU_BERR_N XREF=2/1A,13/2E 100 CPU_RETRY_N XREF=2/2A,14/2A 101 ACK AD6 BUSERR AD7 RETRY AD8 AD9 AD10 CPU_BREQ_N

Contextual Info: TOSHIBA TMP96CM40F TLCS-900 Series CMOS 16-bit Microcontrollers TMP96CM40F 1. Outline and Device Characteristics T h e T M P 9 6 C M 4 0 F are h ig h -s p e e d a d v a n c e d 16 -b it m ic ro ­ • C a n b e e x p a n d e d u p to 16 M b y te s for b o th p ro g ra m s a n d

Contextual Info: HN62448 Series 524288-word x 16-bit/1048576-word x 8-bit CMOS Mask Programmable ROM HITACHI ADE-203-397B Z Rev. 2.0 Oct. 2,1996 Description The Hitachi HN62448 is a 8-Mbit CMOS mask-programmable ROM organized either as 524288-words by 16-bits or as 1048576-words by 8-bits. And a high speed access of 100/120 ns is the m ost suitable to th

Contextual Info: TOSHIBA TLCS-900 Series TMP96C031N/F CMOS 16-bit Microcontrollers TMP96C031N/TMP96C031F 1. Outline and Device Characteristics The TMP96C031 are high-speed advanced 16-bit microcon­ trollers developed for controlling medium to large-scale equip­ ment. TMP96C031N comes in a 64-pin shrink DIP; the

Contextual Info: HN29WT800/HN29WB800 Series 1048576-word x 8-bit / 524288-word x 16-bit CMOS Flash Memory HITACHI ADE-203-537 Z Preliminary - Rev. 0.0 J u n .14,1996 Description The Hitachi HN29WT800 Series, HN29WB800 Series are 1-Mword x 8-bit/512-kword x 16-bit CMOS Flash Memory with DINOR (Divided bitlineNOR) type memory cells, thatrealize programming and erase

FBD25

Abstract: hesd 50 FBD15 MA6 rs232 driver jack p4 2.1mm JP21-JP24 ColdFire v5 nc10 samsung EVCC12 qd33
Contextual Info: A B C 7 18 31 42 VCC VCC VCC VCC GND GND GND GND 28 34 39 45 GND GND GND GND 4 10 15 21 +3.3 4x 4.7K 1 PP[0:7] RP6 7 5 3 1 7 5 3 1 8 6 4 2 8 6 4 2 7 18 31 42 28 34 39 45 4x 4.7K 1A1 1A2 1A3 1A4 1A5 1A6 1A7 1A8 2A1 2A2 2A3 2A4 2A5 2A6 2A7 2A8 1DIR 1OE 2OE 2DIR

Bt462

Abstract: BT459
Contextual Info: Bt459 Distinguishing Features Applications • High-Resolution Color Graphics • CAE/CAD/CAM • Image Processing • Video Reconstruction 150, 135, 110, 80 MHz Operation 1:1, 4:1, or 5:1 Multiplexed Pixel Ports 256 x 24 Color Palette RAM 16 x 24 Overlay Color Palette

Contextual Info: KS88C4204 ELECTR O NICS Microcontroller DESCRIPTION The KS88C4204 and KS88C4208 single-chip microcontrollers are fabricated using an advanced CMOS process. The only difference between the two devices is ROM size: the "4204" has a 4-Kbyte ROM and the "4208" has an

Contextual Info: Or, Call Customer Service at W 0-548-6132 USA Only BURR - BROW N S | B B SHC5320 | DESCRIPTION • ACQUISITION TIME TO 0.01%: 1.5).is max The SHC5320 is a bipolar monolithic sample/hold circuit designed for use in precision high-speed data acquisition applications.

Contextual Info: bME D ADV MICRO MEMORY WM 02S7S2Ö DÜ35177 bl5 • A M D 4 Am27X010 1 Megabit (131,072 x 8-Bit) CMOS ExpressROM Device ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime

Contextual Info: Data Sheet May 1998 m icroelectronics group Lucent Technologies Bell Labs Innovations T7689 5.0 VT1 Quad Line Interface Features Description • Four fully integrated T1 line interfaces The T7689 is a fully integrated quad line interface containing four transmit and receive channels for use

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

centronic osd100 6

Abstract: Q0320 OSD50-4T QD320-4 LD20-4T MD100-4T MD25-4T OSD100-4T OSD200-4T OSD300-4T
Contextual Info: CENTRONIC INC-, E-0 DIV HIE D • Silicon Photodetectors 1T3S2S0 0 0 0 0 3 b 2 s ICENB Series 4T T-M1-H7 Lower Cost Version of Series 4 The Series 4T photodetectors are a lower cost series offering good responsivity out to 1150 nm and low capacitance. They are restricted

centronic osd100 6

Abstract: MD25-3 LD20-3 MD100-3 OSD100-3 OSD200-3 OSD300-3 OSD50-3 QD100-3 QD320-3
Contextual Info: CENTRONIC INC-, E-0 DIV 41E J> • n i S a S O GQD03Sb 7 « C E N B Silicon Photodetectors ^''4.^745' Series 3 Near IR Sensitive, High Speed The Series 3 photodetectors are designed for high speed and maximum responsivity in the near infra-red region. They are particularly

1N3993RA

Abstract: 1N2970 1N2977 1N2979 1N2980 1N2982 1N2984 1N2986 1N2988 1N2993
Contextual Info: D MIL SPECS • □□□□125 0032504 =1 ■ N I L S |The documentation and process conversion \ ¡measures necessary to comply with this | ¡revision shall be completed by 93' 1- 1 |INCH-POUND| MIL-S-19500/124G 15 October 1992 SUPERSEDING MIL-S-19500/124F

Contextual Info: Datasheet SATA Slim 3MG2-P series - SATA III soultion for industrial field - High IOPS solution - iData Guard protection - iSMART disk health monitoring - Intelligent error recovery system - Excellent data transfer speed - Zero mechanical interference - Compatible with JEDEC MO-297 standard

Contextual Info: »2 JLC E PRELIMINARY PRODUCT SPECIFICATION Z 80185/ Z 80 1 95 SMART PERIPHERAL CONTROLLERS FEATURES • Z80185: 32 Kbytes ROM Z80195: ROMIess ■ Enhanced Z8S180 MPU - Code Compatible with Zilog's Z80 /Z180w CPUs - Extended Instructions - Two Enhanced DMA Channels

TL7733ID

Abstract: 29LV004 mARKING CODE LA4 mc5206 simm EDO 72pin AM29LV004DT Venkel C0805X7R500104KNE 2032LV tl7705 marking sday
Contextual Info: M5206EC3 USER'S MANUAL REVISION 1.2 Cadre III A Framework for Solutions 4150 Freidrich Lane Suite D Austin, Texas 78744 Support: USA only : (800) 410-2031 (512) 326-9455 Email: support@cadreiii.com Web: www@cadreiii.com LIMITED WARRANTY Cadre III warrants this product against defects in material and workmanship for a period of sixty