Q814 Search Results

00F1H

Contextual Info: • v p a c _MX29F1 610 1 B M -B IT C 2 M x S / 1 M x 1 6 C M O S S IN G U E V O L T A G E F L A S H E E P R O M FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Minimum 1,000/10,000 write/erase cycles

29f1615

Abstract: MX29f1615
Contextual Info: PRELIMINARY MX29F1615 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • Software and hardware data protection • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100 cycles

00C2H

Contextual Info: MX27C4100/27C4096 4M-BIT [512K x 8/256K x 16] CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin • • • • • • • • out 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) +12.5V programming voltage Fast access time: 100/120/150 ns

Contextual Info: MX27C8100 8M-BIT [1M x8/512K x16] CMOS OTP ROM FEATURES • • • • • • Operating current: 60mA • Standby current: 100uA • Package type: 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation

29L1611-75

Abstract: 29l1611-10
Contextual Info: PRELIMINARY MX29L1611 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • Regulated voltage range 3.0 to 3.6V write, erase and read MX29L1611-75/10/12 • Fast random access/page mode access time: 75/ 30ns, 100/30ns, 120/30ns.

Contextual Info: IW Â O T Â i û i P OiFÛPMÂTOÛi M X2 7 Cl 6 1 O K IC 1 6 M -BIT[2 M X 8/ 1 M x 1 6] CMOS OTP ROM FEATURES • • • • • 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible

MX27C8111

Contextual Info: Introduction Selection Guide PRELIMINARY MX27C8111 8M-BIT[1M x 8/512K x 16] CMOS OTP ROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time:90/100/120/150 ns

MX28F2100B

Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100B 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

MX27C4111

Contextual Info: PRELIMINARY MX27C4111 4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE FEATURES • • • • • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns

MX27C4111

Contextual Info: Introduction Selection Guide PRELIMINARY MX27C4111 4M-BIT 512K x 8/256K x 16 CMOS EPROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 512K x 8 or 256K x 16 organization +12.5V programming voltage Fast access time: 90/100/120/150 ns

MX27C1610PC-10

Abstract: IN3064 MX27C1610 MX27C1610MC-15
Contextual Info: Introduction Selection Guide ADVANCED INFORMATION MX27C1610 16M-BIT[2M x 8/1M x 16] CMOS OTP ROM FEATURES • • • • • 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible

MX27C8100

Contextual Info: Introduction Selection Guide MX27C8100 8M-BIT[1M x 8/512K x 16] CMOS OTP ROM FEATURES • • • • • 1M x 8 or 512K x 16 organization +12.5V programming voltage Fast access time: 100/120/150/200 ns Totally static operation Completely TTL compatible • Operating current: 60mA

MX28F2100T

Abstract: MX28F2100TTC90
Contextual Info: Introduction Selection Guide PRELIMINARY MX28F2100T 2M-BIT 256K x 8/128K x 16 CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low power consumption – 50mA maximum active current – 100 µAmaximum standby current

AM27C512

Abstract: AM27C512-90DC 127C512
Contextual Info: ADV MICRO MEMORY b*4E D • 025752Ö 0D31c14b 3 0 e! ■ AMDM a Advanced Micro Devices Am27C512 512 Kilobit (65,536 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access time ■ Latch-up protected to 100 mA from -1 V to Vcc + 1 V — 70 ns ■ High noise immunity

b20 100 transister

Abstract: Z1312 sis650 U57A C816 C817 ac345 QT1608RL060HC-3A M961 uniwill
Contextual Info: A B C D E IERR is output pin , so if SIS650 no this input , it can open. GTL+_STPCLK# R32 1K GTL+_SMI# R393 1K 200 GTL+_CPUSLP# R417 1K 200 GTL+_INIT# R33 1K 200 GTL+_IGNNE# R75 1K 200 GTL+_A20M# R396 1K 200 GTL+_IERR# R34 1K GTL+_DPSLP# R119 1K 200 GTL+_INTR

AU-6433

Abstract: ISL6251 AU6433-B52-GBL-GR am4825p CN603 CN701 d8107 1000-F50E-02R fdmc4435bz s104 85a
Contextual Info: 5 4 3 2 1 D D ACER_BAP51/BAP52 C C MINI-CARD BOARD 2009.06.30 B B A A EE DRAWER DESIGN CHECK RESPONSIBLE SIZE= FILE NAME: XXXX-XXXXXX-XX P/N XXXXXXXXXXXX 5 4 3 2 DATE POWER DATE INVENTEC D-CS-1310A2271201-ALG TITLE BAP51/BAP52 MINI-CARD/B VER: CODE SIZE Custom A01

Contextual Info: MX27C2100/27C2048 2M-BIT [256Kx8/128x16] CMOS EPROM FEATURES • • • • • 128K x 16 organization MX27C2048, JEDEC pin out • 256K x 8 or 128K x 16 organization(MX27C2100, ROM pin out compatible) • +12.5V programming voltage • Fast access time: 55/70/90/120/150 ns

mxic

Contextual Info: ADVANCED INFORMATION MX29L1611G 16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • 3.3V ± 10% for write and read operation 11V Vpp erase/programming operation Endurance: 100 cycles Fast random access time: 90ns/100ns/120ns

Contextual Info: PRELIMINARY MX29F1610A 16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • • Page program operation 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:100,000 cycles Fast access time: 90/100/120ns

Contextual Info: MX27C1100/27C1024 1M-BIT [128K x 8/64K x 16] CMOS EPROM FEATURES • 64K x 16 organization MX27C1024, JEDEC pin • • • • • • Operating current: 40mA • Standby current: 100uA • Package type: out 128K x 8 or 64K x 16 organization(MX27C1100, ROM pin out compatible)

MX27C8100PC-17

Abstract: MX27C8100DC-20
Contextual Info: I L Ä f M Y M X 2 7C 8 1O O S M -a m iM X 8 / 5 - 1 2 K x I B C A M » 0>RO M FEATURES • • • • • 1 M x 8 o r 5 1 2 K x 1 6 organization +12.5V programming voltage Fast access time: 120/150/175/200 ns Totally static operation Completely TTL compatible

X27C4

Abstract: MX27C4096DC-12 MX27C4096DC 27c4100
Contextual Info: [P ^E L D M O liM ß W M X IC M X27C 4100/27C4096 4IN/I-BITI51SK x 8 /2 5 B K x 1 B CMOS EPROM FEATURES • 256K x 16 organization MX27C4096, JEDEC pin out) • 512K x 8 or 256K x 16 organization(MX27C4100, ROM pin out compatible) • +12.5V programming voltage

Contextual Info: Introduction Selection Guide ADVANCED INFORMATION MX27C1611 16M-BIT[2M x 8/1M x 16] CMOS OTP ROM WITH PAGE MODE FEATURES • • • • • • With Page Mode function, 8-word/16-byte page 2M x 8 or 1M x 16 organization +12.5V programming voltage Fast access time:100/120/150 ns

MX29F1610A

Abstract: MX29F1610B PM05
Contextual Info: Introduction Selection Guide PRELIMINARY MX29F1610A/B 16M-BIT 2M x 8/1M x 16 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • 5V ± 10% write and erase • JEDEC-standard EEPROM commands • Endurance:100,000 cycles • Fast access time: 70/90/120ns • Sector erase architecture