Q0225 Search Results

Contextual Info: SD3421/5421 Silicon PIN Photodiode FEATURES • TO-46 metal can package • Choice of flat window or lensed package • 90° or 18° nominal acceptance angle option • Fast response time • Wide operating temperature range (-55°C to +125°C) • Mechanically and spectrally matched to

Contextual Info: M IT SU BISH I MICROCOM PUTERS M 37 7 10 S 4B F P 16-BIT CM OS M ICRO C O M PU TER DESCRIPTION The M37710S4BFP is a microcomputer designed with highperformance CM O S silicon gate technology. This is housed in a 80-pin plastic molded QFP. This microcomputer has a

F8212

Abstract: E1307 F5020 F8050 equivalent F5022 f8432 f8050 E1203139 e2136 F5020 Transistor
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

F8212

Abstract: F8601 E1307 78K0R U19810EJ1V0UM00 E-032 E1204 F3415 V850E2V3 led message display projects f8432
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz

TP2020L

Abstract: VP2020L BSS92 TP1220L TF1725
Contextual Info: TP1220L, TP/VP2020L, BSS92 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number n>S on M a x (Q ) VGS(th) (V) I d (A ) TP1220L -120 20@ VGs = -4 .5 V -1 to -2.4 -0.12 TP2020L -200 20 @ VGs -1 to -2.4 -0.12 VP2020L -200 20@ Vg s = -4 .5 V

Contextual Info: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V

F8212

Abstract: E1307 W8509 E2630 E2750 E2712 E2751 e2632 E2515 E2749
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

gg22

Abstract: 20P5A DD22S
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M 5 1 5 2 4 L /P /F P AUTO REVERSE PREAMPLIFIER WITH MUSIC SENSOR DESCRIPTION The M51524 is a preamplifier IC developed for car audio systems. The IC, in additions to 2 channels of high-gain, low-noise preamplifiers, has a lead-in

F8212

Abstract: E1307 F8050 equivalent f2608 E2749 e2632 f8050 f6550 e2411 F5020 Transistor
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MB86605

Contextual Info: FUNCTIONS FUJITSU 3.1. BLOCK DIAGRAM - 16-Bit Bus Mode D15 to D7 to D8, DO, INT UDP LDP -W R SCSI Interface -RD -CSO -CS1 A4 to AO -BHE MODE1 MODEO t 0 I I I I fl I I I MPU Interface -MSG • -C /D -I/O -ATN ■ Internal Processor Various Registers Timer 32 bytes

Contextual Info: CS5180 AZ Modulator & 8 kHz to 400 kHz 16-Bit ADC Features Description • 16-Bit Delta-Sigm a A /D Converter CS5180 is a fully calibrated high-speed A L analog-todigital converter, capable of 400 kSamples/second out­ put word rate OWR . The OWR scales with the master

gs 069 0605

Abstract: pw 2222 a mosfet vn10lm mosfet vn10 SILICONIX MARKING to237 vn10 52429 Siliconix vn10 VN10LE
Contextual Info: T em ic VN10/0605/0610/2222 Series Se mi c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN10LM VN0605T VN0610LL VN2222LL VN2222LM Product Summary P a rt N um ber V BR DSS M in (V) r DS(on) M a x (£2) V GS(th)(V ) I D M in (A ) VN10LE

IPM1560

Abstract: high side IGBT driver optocoupler
Contextual Info: P D -9.1283 International S Rectifier PROVISIONAL IP M 1 56 0 IGBT INTELLIGENT MODULE Features • • • • • • • • • 3 phase IGBT bridge with drive and protection circuit. 2kW output power at 300VDC, 8kHz, Tc = 85°C "UltraFast“ IGBT and "HEXFRED"™ Ultrafast, Soft Recovery Diodes.

TIM7179-16SL

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz

AOI gate d flip flop

Abstract: l4974 ekr 1000
Contextual Info: 7^2=1237 r z ^ 7 7 □ 0 2 2 5 fiL4 H S C S -T H O M S O N # M @ [R m iO T « n @ S G S-THOMSON - r SB § _ 30E 1 3.1 L 4 9 7 5 » 5A SWITCHING REGULATOR A D VA N C E DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■