Q0204 Search Results

Contextual Info: HARRIS SEMICOND SECTOR S7E D M 30 2 2 7 1 Q0204Ô7 _ - File Number S HIHAS Power Transistors MJH13090, MJH13091 15.94 ~ r - 3 3 ~ '3 H igh-S peed Silicon N -P -N Pow er Transistors Features: 100° C Performance Specified for: •Reverse-Biased SOA with inductive loads

BUK446

Abstract: BUK446-1000A transistor k446 BUK446-1000B k446 diode t25 4 L0
Contextual Info: N AMER PHILIPS/DISCRETE 2 SE D • bbS3131 Q02042S M PowerMOS transistor BUK446-1000A BUK446-1000B T - 3 7 - 0 ? GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK446

Abstract: BUK446-1000A BUK446-1000B bu 508
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D bbS3 1 3 1 Q02042S 0 WÊ PowerMOS transistor BUK446-1000A BUK446-1000B r - 3 cf ‘ 0 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: International ^Rectifier PD - 9.684A IRGPC40U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail” losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

BUK454-600A

Abstract: 1-fjv BUK454-600B T0220AB BUK454-600
Contextual Info: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

MSM56V16160

Abstract: active suspension BA 596 equivalent TE454
Contextual Info: O K I Semiconductor MSM56V16160 2-Bank x 524,288-W ord x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and

Contextual Info: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER P H I L I P S / D I S C R E T E 55E D ooso4fls ? BUK455-50A BUK455-50B PowerMOS transistor r-s ^ -/3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

72V01

Contextual Info: 3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9,1024 x 9, 2048 x 9, 4096 x 9 Integrated D evice Technology, Inc. FEATURES: • • • • • • • • • • • • 3.3V family uses 70% less power than the 5 Volt 7201/ 02/03/04 family 512 x 9 organization 72V01

TRANSISTOR SE 135

Abstract: IE-02 BUK445-450B BUK445-450
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^53^31 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: Z8449 Z80 SI0 9 Serial Input/Output Controller Single Copy- Product Specification ^Handle With Care Zilog M arch 1981 R eceiver data re g iste rs q u a d ru p ly buffered, tran sm itter re g iste rs doubly buffered. • O n e full-duplex c h an n e l, with se p a ra te

72v02l25

Abstract: 72V01L25 q0204 72V03L35 72V01
Contextual Info: 3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9,1024 x 9, 2048 x 9, 4096 x 9 Integrated D evice Technology, Inc. FEATURES: • • • • • • • • • • • • 3.3V family uses 70% less power than the 5 Volt 7201/ 02/03/04 family 512 x 9 organization 72V01

Contextual Info: ,O J N Y 1_ L C X 0 0 7 B K A 3.4cm 1.35-inch Color LCD Panel Description The LCX007AKA is a 3.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit, and it provides a full-color representation. (The

Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSBTBl QQ204QS S P o w e rM O S tra n s is to r B U K 445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channe! enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK454-600A

Abstract: bu 257 BUK454-600B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE 2SE t.bS3*131 Q G 2 Q 4 7 S D 4 PowerMOS transistor BUK454-600A BUK454-600B T -3 7 -/I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies