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    ECG1355

    Abstract: ECG1354 darlington amplifiers ECG1355 S-100W S-100WA power darlington 100W power amp 60w
    Contextual Info: PHILIPS E C 6 INC 17E 0 bbSBTaa Q00SS3S 3 y ''- ECG1354, ECG1355 100 W, 60 W A F Power Darlington M odules Semiconductors Features * Hybrid output stage Darlington amplifiers * Flexibility to obtain desired characteristics by adding driver circuit * Easy m ounting and no need for


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    q00ss3secg1354ecg1355ecq1355+5ecg13s4darlington amplifiersecg1355 s-100w s-100wapower darlington 100wpower amp 60w PDF

    Contextual Info: 11E D Two-Dimensional PSD • 4E2ibQT Q00SSÔ2 1 ■ - H A M A M A T S U CORP Maximum Ratings Type No. T-<Al^S - Position Detection Error Radiant Sensitivi­ ZONE O ZONE B O ty at Typ. Max. Typ. Max. SOOnm Effective Sensitive Area Spectral


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    q00sss1300s1880 PDF

    Contextual Info: SILICON SYSTEMS INC ITE D • 82S3US QG05S11 5 ■ SSI 32P541A mmMkm Read Data Processor June, 1989 DESCRIPTION FEATURES The SSI 32P541A is a bipolar integrated circuit that provides all data processing necessary for detection and qualification of M FM or RLL encoded read signals.


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    82s3usqg05s1132p541a24-lead+232p541a-p28-lead PDF

    Contextual Info: . O PTEK Product Bulletin OP169 June 1996 GaAs Plastic Infrared Emitting Diodes Types OP169A, OP169B, OP169C Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Integral lens for narrow beam angle • Easily stackable on 0.100 inch (2.54


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    op169op169aop169bop169c+1op509 PDF

    Contextual Info: A p p l ic a t io n N o t e s A V A I L A B L E AN62 • AN64 • AN66 U m X88C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES • Highly Integrated Microcontroller Peripheral —8K x 8 E2 Memory —2 x 8 General Purpose Bidirectional I/O Ports


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    x88c75 PDF

    HXTR3685

    Abstract: HXTR-7111 HXTR-3615 hxtr-3685 HXTR3 HXTR-7111TXV hxtr-7011
    Contextual Info: HEWLETT-PACKARD-. CMPNTS SDE D B M447SÖ4 QQOSSbb 3 El T " 31“ /? T-31'21 Low N oise Transistors HXTR-7011 Chip HXTR-7111, TX and TXV HXTR-3615, TX and TXV HXTR-3645, TX and TXV HXTR-3675, TX and TXV HSMX-3635 HSMX-3655 Technical Data Features D escription


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    m447shxtr-7011hxtr-7111hxtr-3615+9hxtr-3645hxtr-3675hsmx-3635hsmx-3655mil-s-19500hxtr3685hxtr-3685hxtr3hxtr-7111txv PDF

    KM41C1000

    Abstract: KM41C1000P km41c1000 B 1mx1 DRAM DIP
    Contextual Info: SAMSUNG SEMICONDUCTOR INC T f i D Ë J 7 T t.4 1 4 E 0 0 0 5 4 ^ 3 7 - y £ - '. CMOS DRAM KM41C1000 1Mx1 Bit Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tcAC tRC KM41C1000-10 100ns 25ns 190ns KM41C1000-12 120ns


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    km41c1000km41c1000-10km41c1000-12100ns+7120ns190ns220ns576x1km41c1000pkm41c1000 b1mx1 dram dip PDF