Q NPN Search Results

J3 transistor

Abstract: PH1214-100EL
Contextual Info: Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty 8/21/02 PH1214-100EL Rev. 3 Features Q Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH1090-700B

Abstract: Mode-S transistor
Contextual Info: Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

transistor 20 dB 14 ghz

Abstract: PH1214-300M Radar transistor Common Base configuration transistor 15 GHz
Contextual Info: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 PH1214-300M Rev. 0 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

transistor J11

Abstract: PH3135-65M J11 transistor radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH2226-110M

Abstract: VCC36
Contextual Info: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

PH1214-300M

Contextual Info: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 9/4/02 PH1214-300M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)

Transistor BSX 62-16

Contextual Info: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

TDA8340

Contextual Info: J^ TDA8340;Q TDA8341;Q TELEVISION IF AMPLIFIER AND DEMODULATOR The TD A 8340;Q and TDA8341 ;Q are integrated IF am plifier and dem odulator circuits fo r colour or black/w hite television receivers, the TDA8340;Q is fo r application w ith n-p-n tuners and the

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ ^ Q ^ Q Q Q Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F=l.ldB , |S2lel2= 12dB f= 1GHz o <e>n 1 Ò 2 M A X IM U M RATIN G S (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in m SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Excellent Switching Times : tr= l .Q a s ( M a x .), tf=l.5«s(Max.) at Ic=0.5A . High Collector Breakdown Voltage : V q ^ q = U 0 0 V

2SC3609

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 0 Q Q U nit in V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Low Noise Figure, High Gain. NF = l.ld B , |S2lel2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

transistor 1047 BL 1

Contextual Info: SILICON NPN EPITAXIAL TY PE HN1B01F U nit in mm A U D IO FREQU ENCY G ENERA L PURPOSE AMPLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1.6-0.1 Q Q1 : —El2 -E33 • High Voltage and High Current : V q e o = _ 50V, I q = —150mA Max. • High hjrg : h]TE = 120~400

case to-106

Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D
Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT*25 Pd = 250 mW PD=200 mW @ T8 25*C Case: To.106 Pd = 150 mW

2SC380TM

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R ^ 3 Q 3 Q Q Y | y | HIGH FREQUENCY AMPLIFIER APPLICATIONS. • • U nit in mm .'j.lU A X . High Power Gain : Gpe = 29dB Typ. (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: TOSHIBA 2SC3098 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE n r ^ n Q R Unit in mm VH F-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS. +Q 5 3 . 5 —Q 3 + Q 35 1-5 —0.15 • Low Noise Figure. . NF = 2.5dB, |S2lel2—14.5dB f = 500MHz . NF = 3.0dB, |S2lel2= 9-0dB(f=lGHz)

transistor f461

Abstract: IF461 I F461 SGSIF461 smps 1500W SGSF461-SGSIF461-SGSF561 SGSF461 MOSFET 700V 10A SGSF461 equivalent smps 750W
Contextual Info: 7 ^ 5 3 7 a Q P g q g Q l_ Û • / SGS-THOMSON iLHOTO «! n S G S-THOMSON i • - ^3 SGSF461 SGSIF461/F561 3QE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS ■ HIGH SWITCHING SPEED NPN POWER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY ■ HIGH VOLTAGE FOR OFF-LINE APPLICA­

ferroxcube for ferrite beads 56-590-65

Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Contextual Info: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar

ICP35

Abstract: horizontal output transistor
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2095 COLOR TV HORIZONTAL OUTPUT TRANSISTOR Unit in . High Voltage : V q b q =1500V 1 5 .5 ± Q .5 r i 1.2.1 . High Speed 26-5±0.5 1 001 " oJ<y 'o : VcE sat =5V(Max.) (Ic=3.5A, Ib =0.8A) : tf=l.Ojis(Max.) (IcP=3.5A, Ib I(end)=0.8A)

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTO R 2 £ Q 3 Q Q 0 U nit in mm V H F - U H F BAN D LO W NOISE A M PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ld B , |S2iel2 = U dB f=lG H z M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

bux98b

Abstract: bux98c
Contextual Info: • T r a g g a? q q e ^ q i ü D ■ BUX98B B UX98C SCS-THOMSON ¡IL[I@ «§ S 6 S-THOMSON 3QE D HIGH VOLTAGE SWITCH DESCRIPTION The BUX98B and BUX98C are silicon multiepitaxial mesa NPN transistors in JedecTO-3 metal case in­ tended for use in switching and industrial applica­