Q NPN Search Results

J3 transistor

Abstract: PH1214-100EL
Contextual Info: Radar Pulsed Power Transistor, 100 Watts, 1.2 - 1.4 GHz, 2 ms Pulse, 20% Duty 8/21/02 PH1214-100EL Rev. 3 Features Q Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH1090-700B

Abstract: Mode-S transistor
Contextual Info: Avionics Pulsed Power Transistor, 700 Watts, 12/10/01 1.03-1.09 GHz, 32 µS Pulse, 2% Duty PH1090-700B Rev. 0 Features Q Q Q Q Q Q Q Q Absolute Maximum Ratings @ 25 °C Designed for Mode-S IFF Applications NPN Silicon Microwave Power Transistor Common Base Configuration

transistor 20 dB 14 ghz

Abstract: PH1214-300M Radar transistor Common Base configuration transistor 15 GHz
Contextual Info: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 12/06/01 PH1214-300M Rev. 0 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

transistor f 255

Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Contextual Info: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors

transistor J11

Abstract: PH3135-65M J11 transistor radar 77 ghz
Contextual Info: Radar Pulsed Power Transistor, 65 Watts, 3.10-3.50 GHz, 100 µs Pulse, 10% Duty 8/9/02 PH3135-65M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH1214-300M

Contextual Info: Radar Pulsed Power Transistor, 300 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty 9/4/02 PH1214-300M Rev. 1 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

Contextual Info: TOSHIBA 2SC3327 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC3327 Unit in mm OR MUTING AND SWITCHING APPLICATIONS • • • • High Emitter-Base Voltage : V e b q = 25V Min. High Reverse hpE : hp^ = 150(Typ.) (V q e = —2V, I q = —4mA) Low On Resistance : R q n = 1H (Typ.) (Iß = 5mA)

Transistor BSX 62-16

Contextual Info: ESC D • 023Sb05 Q Q Q M û n T H S I E â { NPN Silicon Planar Transistors BSX62 -BSX63 - SIEMENS AKTIEN6ESELLSCHAF -BSX 62 and BSX 63 are epitaxial NPN silicon planar transistors in TO 39 case 5 C 3

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

C 548 B

Abstract: B549C BC650 C 547 B TRANSISTOR BC650 transistor bc 549 equivalent transistor C 548 B C547B TRANSISTOR BC 550 c transistor c 548
Contextual Info: asc D • fi 23S hü S Q Q Q m S Q T M S I E G _ T - 2~ 9 ~ Z / NPN Silicon Transistors BC 546 - BC 550 SIEMENS AKTIENGESELLSCHAF . 25C 04190 D - BC 546, BC 547, BC 548, BC 549 and BC 550 are epitaxial NPN silicon planar transistors in TO 92 plastic packages 10 A 3 DIN 41868 . They are intended for use in AF input and

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR ^ ^ Q ^ Q Q Q Unit in mm V H F - U H F B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • Low Noise Figure, High Gain. N F=l.ldB , |S2lel2= 12dB f= 1GHz o <e>n 1 Ò 2 M A X IM U M RATIN G S (Ta = 25°C)

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in m SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES: . Excellent Switching Times : tr= l .Q a s ( M a x .), tf=l.5«s(Max.) at Ic=0.5A . High Collector Breakdown Voltage : V q ^ q = U 0 0 V

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTOR 2 3 Q 5 Q 0 Q U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = 1.8dB, |S2lel2= 7.5dB f=2GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

2SC3609

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 0 Q Q U nit in V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. Low Noise Figure, High Gain. NF = l.ld B , |S2lel2= 13dB f=lG H z MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage

case to-106

Abstract: SC1674 BF195C 195D 2N4080 2N917 10003 NPN BF194A BF 195D
Contextual Info: ADVANI OERLIKON/ SEMICOND 3bE D OPblbMfi O Q Q D O n □ • SELI I -T-Z“I-Q\ TELEVISION/VIDEO DEVICES SEMICONDUCTORS a I.F ./R .F . amplifiers and oscillators NPN TYPE PNP Case: To.92 Case: SOT*25 Pd = 250 mW PD=200 mW @ T8 25*C Case: To.106 Pd = 150 mW

2SC380TM

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R ^ 3 Q 3 Q Q Y | y | HIGH FREQUENCY AMPLIFIER APPLICATIONS. • • U nit in mm .'j.lU A X . High Power Gain : Gpe = 29dB Typ. (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta = 25°C)

ferroxcube for ferrite beads 56-590-65

Abstract: VK200 ferrite inductor vk200 VK200 rfc 2N5944 VK200 ferroxcube for ferrite beads THOMSON-CSF electrolytic VK200 INDUCTOR 565-9065
Contextual Info: S G S-THOMSON O M C D I 712=1237 Q Q Q O D I l 3 | . SOLID STATE MICROWAVE 2N5944 ; THOMSON-CSF COMPONENTS CORPORATION _ [ Montgomery ville, PA 1 8 9 36 « 215 362:8500 * TWX 510-661-7299 _j UHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type 2N5944 is a 12.5 volt epitaxial silicon NPN planar

ICP35

Abstract: horizontal output transistor
Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2095 COLOR TV HORIZONTAL OUTPUT TRANSISTOR Unit in . High Voltage : V q b q =1500V 1 5 .5 ± Q .5 r i 1.2.1 . High Speed 26-5±0.5 1 001 " oJ<y 'o : VcE sat =5V(Max.) (Ic=3.5A, Ib =0.8A) : tf=l.Ojis(Max.) (IcP=3.5A, Ib I(end)=0.8A)

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRANSISTO R 2 £ Q 3 Q Q 0 U nit in mm V H F - U H F BAN D LO W NOISE A M PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ld B , |S2iel2 = U dB f=lG H z M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC

bux98b

Abstract: bux98c
Contextual Info: • T r a g g a? q q e ^ q i ü D ■ BUX98B B UX98C SCS-THOMSON ¡IL[I@ «§ S 6 S-THOMSON 3QE D HIGH VOLTAGE SWITCH DESCRIPTION The BUX98B and BUX98C are silicon multiepitaxial mesa NPN transistors in JedecTO-3 metal case in­ tended for use in switching and industrial applica­

Contextual Info: TOSHIBA {DISCRETE/OPTOJ 9097250 T O SH IB A Sb DE I ^ O T T a S Q Q 0 Q 7 4 C14 b <D I S C R E T E / O P T O SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=25W Min.) (f=470MHz, V CC=12.6V, Pi=10W)

LV 1084

Contextual Info: SILICON NPN EPITAXIAL P LA N A R T Y P E T R A N SIST O R 2 § Q £ } Q Q Q V H F - U H F B A N D L O W N O IS E A M P L IF IE R A P P L IC A T IO N S . • U n it in mm Low N oise Figure, H igh G ain. N F = l .l d B , |S 2 i e í ¿ = 1 3 d B f= lG I Í z

Contextual Info: SAMSUNG SEMICONDUCTOR IN C _ MMBT5088 — IM E D | T lb M lM S Ü007271. T § NPN EPITAXIAL SILICON TRANSISTOR - LOW NOISE TRANSISTOR T '- ^ . q - i q " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C

Contextual Info: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R 2 3 Q 3 Q Q 3 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. U n it in mm + 0 .5 8 .5 - 0 . 3 • Low Noise Figure. . NF = 2.5dB, |S2le|2 = 14.5dB f=500M Hz . NF = 3.0dB, |S2le|2= 9.0dB (f=lG H z) L 5 - 0 .1 5