HN1B01F Search Results
HN1B01F Datasheets (43)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Complementary Monolithic Transistor Pair | Original | 344.66KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01F |
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Japanese - Transistors | Original | 519.85KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01F |
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Transistors | Original | 371.13KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FDW1T1 |
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Complementary Dual General Purpose Amplifier Transistor | Original | 68.56KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FDW1T1 |
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Complementary Dual General Purpose Amplifier Transistor | Original | 53.26KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FDW1T1-D |
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Complementary Dual General Purpose Amplifier Trans | Original | 67.73KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FDW1T1G |
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Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount | Original | 53.24KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01F-GR |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, 2-3N1A, SM6, 6 PIN, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FGRTE85L |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01F-GR(TE85L,F |
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Transistors (BJT) - Arrays, Discrete Semiconductor Products, TRAN PNP/NPN -50V -0.15A SM6 | Original | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FGRTE85N |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FGRTE85R |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FTE85L |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FTE85N |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FTE85R |
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HN1B01F - TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | Original | 371.15KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FU |
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Silicon NPN Epitaxial Type (PCT Process) | Original | 348.17KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FU |
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Japanese - Transistors | Original | 519.75KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FU |
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NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | Scan | 270.59KB | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HN1B01FUGR |
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TRANS GP BJT PNP NPN 50V 0.15A 6(2-2J1A) | Original | 216.94KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
HN1B01F Price and Stock
Toshiba America Electronic Components HN1B01FUGRLFTTRANS GP BJT NPN/PNP 50V 0.15A 6-PIN SSOP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1B01FUGRLFT | 102,000 | 1,277 |
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Buy Now | ||||||
Toshiba America Electronic Components HN1B01FU-Y,LF(TTrans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1B01FU-Y,LF(T | 15,000 | 1,277 |
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Buy Now | ||||||
Toshiba America Electronic Components HN1B01FU-GR,LF(BTrans GP BJT NPN/PNP 50V 0.15A 200mW 6-Pin US |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1B01FU-GR,LF(B | 3,000 | 1,220 |
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Buy Now | ||||||
| HN1B01FU-GR,LF(B | 449 | 447 |
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Buy Now | |||||||
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HN1B01FU-GR,LF(B | 2,759 |
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Buy Now | |||||||
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HN1B01FU-GR,LF(B | 3,449 | 975 |
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Buy Now | ||||||
Toshiba America Electronic Components HN1B01FU-GR,LF- Tape and Reel (Alt: HN1B01FU-GR,LF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1B01FU-GR,LF | Tape & Reel | 24 Weeks | 3,000 |
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Buy Now | |||||
Toshiba America Electronic Components HN1B01FU-Y,LXHFTransistor BJT Array PNP/NPN 50V 150mA 6-Pin SOT-363 - Tape and Reel (Alt: HN1B01FU-Y,LXHF) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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HN1B01FU-Y,LXHF | Tape & Reel | 36 Weeks | 3,000 |
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Get Quote | |||||
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HN1B01FU-Y,LXHF | Reel | 3,000 |
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Buy Now | ||||||
HN1B01F Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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HN1B01FContextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) |
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hn1b01f | |
HN1B01FUContextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max) |
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hn1b01fu-150ma150ma | |
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Contextual Info: T O S H IB A TO SH IB A TRANSISTOR HN1B01FU SILICON PNP E PITA XIA L TYPE PCT PROCESS SILICON NPN E P ITA X IA L TYPE (PCT PROCESS) H N 1 B 01 F U Unit in mm A U D IO FR E Q U E N C Y G E N E R A L PURPOSE A M P L IF IE R A P P L IC A T IO N S . 2 . 1± 0.1 |
OCR Scan |
hn1b01fu150ma | |
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Contextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) |
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hn1b01fu-150ma150ma100ma | |
HN1B01FDW1T1
Abstract: 318F SMD310
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hn1b01fdw1t1200x400hn1b01fdw1t1/d318f+1 | |
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Contextual Info: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 |
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hn1b01fdw1t1gshn1b01fdw1t1g200x400aec-q101+2 | |
transistor con HFE 400Contextual Info: TOSHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 B0 1 F Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER + 0.2 2.8-0.3 APPLICATIONS. + 0.2 1 .6 - 0 .1 3- Ql : • High Voltage and High Current |
OCR Scan |
hn1b01f150macl25ltransistor con hfe 400 | |
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Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) |
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hn1b01f | |
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Contextual Info: HN1B01FDW1T1G, HN1B01FDW1T1G Complementary Dual General Purpose Amplifier Transistor http://onsemi.com PNP and NPN Surface Mount Features • • • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 |
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hn1b01fdw1t1gshn1b01fdw1t1g200x400hn1b01fdw1t1/d | |
318F
Abstract: HN1B01FDW1T1 SMD310
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hn1b01fdw1t1200x400r14525hn1b01fdw1t1/d+2 | |
HN1B01FUContextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max) |
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hn1b01fu-150ma150ma | |
ic audio axignContextual Info: TOSHIBA HN1B01F TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1RÍ11F AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Ql ! High Voltage and High C urrent ». Axign u : VC E O = - 50V> IC = -1 5 0 m A (Max.) |
OCR Scan |
hn1b01f150maic audio axign | |
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Contextual Info: TO SHIBA TOSHIBA TRANSISTOR HN1B01F SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HN1B01F U nit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER 2 .8 APPLICATIONS. 1. 6 + 0.2 - 0.3 + 0.2 - 0.1 !• Ql : oo t-EB 2 High Voltage and High C urrent |
OCR Scan |
hn1b01f150ma | |
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Contextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: High voltage and high current : VCEO = −50V, IC = −150mA (max) High hFE : hFE = 120~400 |
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hn1b01f-150ma150ma000707eaa2 | |
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Contextual Info: HN1B01FU SILICON PNP EPITAXIAL PLANAR TYPE SILICON NPN EPITAXIAL PLANAR TYPE U n it in mm A U D IO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. Q1 : • High Voltage and High Current : V q e o = -5 0 V , I q = - 150mA Max. • High hpE : ^FE = 120~400 |
OCR Scan |
hn1b01fu150ma | |
HN1B01FUContextual Info: HN1B01FU 東芝トランジスタ シリコンPNP･NPNエピタキシャル形 PCT方式 HN1B01FU ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = －50V コレクタ電流が大きい。 : IC = －150mA (最大) 電流増幅率が高い。 |
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hn1b01fu150ma100ma | |
318F
Abstract: HN1B01FDW1T1 HN1B01FDW1T1G
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hn1b01fdw1t1200x400sc-74hn1b01fdw1t1/d+2 | |
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Contextual Info: HN1B01FU TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01FU Audio Frequency General Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50V, IC = −150mA (max) |
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hn1b01fu150ma | |
TRANSISTOR MARKING TE US6
Abstract: 125H HN1B01FU
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OCR Scan |
hn1b01fu150matransistor marking te us6125h | |
HN1B01FContextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio Frequency General Purpose Amplifier Applications Unit in mm Q1: l High voltage and high current : VCEO = −50V, IC = −150mA (max) |
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hn1b01f-150ma150ma000707eaa2 | |
HN1B01FContextual Info: HN1B01F 東芝トランジスタ シリコンPNP・NPNエピタキシャル形 PCT方式 HN1B01F ○ 低周波増幅用 単位: mm Q1 z z z z 高耐圧です。 : VCEO = －50V コレクタ電流が大きい。 : IC = －150mA (最大) 電流増幅率が高い。 |
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hn1b01f150ma100ma | |
HN1B01FContextual Info: HN1B01F TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process Silicon NPN Epitaxial Type (PCT Process) HN1B01F Audio-Frequency General-Purpose Amplifier Applications Unit: mm Q1: z High voltage and high current : VCEO = −50 V, IC = −150 mA (max) |
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hn1b01f | |
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Contextual Info: TOSHIBA TOSHIBA TRANSISTOR HN1B01FU SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) H N 1 R fl 1 F 11 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. 2.1± 0.1 1.2 5 ±0.1 Q1 : • High Voltage and High. Current |
OCR Scan |
hn1b01fu--50v--150ma150ma | |
On Semiconductor MARKING DIAGRAM SOD-123Contextual Info: HN1B01FDW1T1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A |
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hn1b01fdw1t1200x400sc-74on semiconductor marking diagram sod-123 | |