Q 720 TO220 Search Results

J722

Abstract: IRF722FI 721F 723 voltage regulator internal diagram IRF720 IRF720FI IRF721 IRF721FI IRF722 IRF723
Contextual Info: 3DE D • 7^537 DQER7ÖC 1 S ■ ' ' T 73 c^ - \ \ / w T SGS-THOMSON S g S-THOMSON ' IRF 720/FI-721/FI IRF 722/FI-723/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Vqss ^DS on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 fi 3.3 A 2.5 A IRF721 IRF721FI

Application of irf 720

Abstract: irf ballast IRF 720 IRF722FI
Contextual Info: SCS-THOMSON IRF 720/FI-721/FI IRF 722/FI-723/FI * it,. M»IHi gTïïMSD(g§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS ^DS(on IRF720 IRF720FI 400 V 400 V 1.8 fi 1.8 0 'd " 3.3 A 2.5 A IRF721 IRF721FI 350 V 350 V 1.8 n 1.8 fi 3.3 A 2.5 A

Contextual Info: INT200 Low-side Driver 10 Low-side Drive and High-side Control with Simultaneous Conduction Lockout POWER INTEGRATIONS, INC. Product Highlights 5 V CMOS Compatible Control Inputs • Com bines logic inputs for low and high-side drives • Schm idt-triggered inputs for noise imm unity

SC06140

Abstract: stp4n90fi STP4NA90 STP4NA90FI STP4N90 SC06-1
Contextual Info: _ 9 r z T S ^ 7# G S - T H O M S O 3 5 r 0 2 N £ t o ^ « ^ e m iig r a « ! 3 4 N > ^ 9 (^ S T P iN A 9 0 FI TYPE S TP4N A90 STP4N A 90FI • ■ . . . . . V dss RDS(on Id 900 V 900 V A A -fc. -&■ ¡0 so

FS12UM-5

Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Contextual Info: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C

STU6NA90

Contextual Info: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE

transistor B 722

Abstract: Q 720 To220 Application of irf 720 720F transistor 721 ld 18 IRF722FI ld 33 G-722
Contextual Info: rZ Z IR F 7 2 0 / F I - 7 2 1 /F I i r f 7 2 2 /F I- 7 2 3 /F I S G S -T H O M S O N * • 7 #» M E M iiie r a M o e s N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF720 IRF720FI VDSs 400 V 400 V RoS on 1.8 ß 1.8 fi 'o ‘ 3.3 A 2.5 A IRF721

Contextual Info: SGS-THOMSON M TO »« S T U 6 N A 90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA90 . rn . . . . . V dss RDS on Id 900 V < 2 Q 5.8 A TYPICAL R d s ( o ii) = 1 5 Q ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED

SPP02N60S5

Abstract: 02n60s5
Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1

P3NA90FI

Abstract: P3NA90 P3NA STP3NA90 STP3NA90FI
Contextual Info: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P3NA90 ST P3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS o n ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

STP3NA90

Abstract: STP3NA90FI
Contextual Info: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING

STP3NA90

Abstract: STP3NA90FI
Contextual Info: STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP3NA90 STP3NA90FI V DSS R DS on ID 900 V 900 V < 5.3 Ω < 5.3 Ω 3A 1.9 A TYPICAL RDS(on) = 4.4 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

1XYS

Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Contextual Info: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)

2-10P1B

Abstract: 2SK2733
Contextual Info: TOSHIBA 2SK2733 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2733 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE Low Drain-Sorce ON Resistance

Q67040-S4181

Abstract: 02N60 SPB02N60S5 SPP02N60S5 02N60S5 Q67040S4181 Q67040-S4212 Transistor 02N60S5 P-TO-263-3-2
Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

SPP02N60S5

Abstract: 02N60S5
Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1

Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 1

P-TO263-3-2

Abstract: Q67040-S4181 SPB02N60S5 SPP02N60S5
Contextual Info: SPP02N60S5 SPB02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

02n60s5

Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
Contextual Info: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances

03n60s5

Contextual Info: SPP03N60S5 SPB03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances

SPP02N60S5

Contextual Info: SPP02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO220-3-1 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances

rjp6065

Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK
Contextual Info: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance

TOPSWITCH DN-16

Contextual Info: TOP100-4 TOPSwitch Family POWER Three-terminal Off-line PWM Switch INTEGRATIONS, INC. Product Highlights Low Cost Replacement for Discrete Switchers • 20 to 50 few er com ponents - cuts cost, increases reliability • Source-connected tab and Controlled M O SFET tum -on

Contextual Info: SMP211 PWM Power Supply IC 85-265 VAC input Isolated, Regulated DC Output POWER INTEGRATIONS, INC. Product Highlights Integrated Power Switch and CMOS Controller • O utput pow er up to 10 W from rectified 220 V A C input, 5 W from rectified universal 85 to 265 V A C input