PULSED Search Results

Contextual Info: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output

KRF7805Z

Contextual Info: IC IC SMD Type HEXFET Power MOSFET KRF7805Z Features Absolute Maximum Ratings Ta = 25 Symbol Rating Continuous Drain Current, VGS @ 10V,TA = 25 Parameter ID 16 Continuous Drain Current, VGS @ 10V,TA = 70 ID 12 Pulsed Drain Current*1 Unit A IDM 120 Power Dissipation Ta = 25

Contextual Info: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF

Contextual Info: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

XP1073-BD

Abstract: xp1073 DM6030HK XP107
Contextual Info: 34.0-37.0 GHz GaAs MMIC Power Amplifier P1073-BD February 2010 - Rev 16-Feb-10 Features Ka-Band 6W Power Amplifier 22.0 dB Small Signal Gain +37.0 dBm Pulsed Saturated Output Power 24% Power Added Efficiency PAE % 100% On-Wafer RF, DC and Output Power Testing

NX7526BF-AA

Abstract: NX7526BF-AA-AZ
Contextual Info: NEC's 1550 nm InGaAsP MQW FP PULSED LASER DIODE NX7526BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 95 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 95 mW MIN at IFP = 1000 mA Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1% NEC's NX7526BF-AA is a 1550 nm Multiple Quantum Well

P77 transistor

Abstract: 1.5 j63 .15 j63 BZ15 ECG5016A l 9113 J4 81 diode
Contextual Info: ,z= i-s L-J =7 f .- an AMP company * z z - = = Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty PHI 214-0.851 1.2 - 1.4 GHz Features NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class A Operation Matrix Geometry

lem current lt 100

Abstract: LEM Components
Contextual Info: Current Transducer LT 4000-T IPN = 4000 A For the electronic measurement of currents : DC, AC, pulsed., with a galvanic isolation between the primary circuit high power and the secondary circuit (electronic circuit). Electrical data IPN IP RM Primary nominal r.m.s. current

RADAR

Abstract: PH1214-25M transistor 25 4 ghz transistor
Contextual Info: Radar Pulsed Power Transistor 25 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-25M PH1214-25M Radar Pulsed Power Transistor - 25 Watts, 1.20-1.40 GHz, 150µS Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

b 595 transistor

Abstract: Mallory Capacitor transistor b 595 J3 transistor transistor 15j30 Rogers 6010.5 PH3135-5M electrolytic Mallory Capacitor MICROWAVE TEST FIXTURE
Contextual Info: =s = =-= ‘, = * an AMP .- -=r= FF company Radar Pulsed Power Transistor, 5W, loops Pulse, 10% Duty PH31355M 3.1 - 3.5 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

PH1214-220M

Abstract: Radar transistor 220
Contextual Info: Radar Pulsed Power Transistor 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty PH1214-220M PH1214-220M Radar Pulsed Power Transistor - 220 Watts, 1.20-1.40 GHz, 150µs Pulse, 10% Duty 1 Features • • • • • • • • Outline Drawing NPN Silicon Microwave Power Transistor

rt6010

Abstract: 2200uf, 63v electrolytic capacitor j453 transistor x 313 63v 2200uF 200B MDS140L 25-mils J345 1030 PULSED 32uS MODE-S
Contextual Info: MDS140L 140 Watts, 50 Volts Pulsed Avionics 1030 to 1090 MHz GENERAL DESCRIPTION The MDS140L is a high power COMMON BASE bipolar transistor. It is designed for MODE-S ELM systems in the frequency band 1030-1090 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The

960-1215 MHz transistor 20W

Abstract: CAPACITOR 33PF electrolytic capacitor, .1uF 470uf, 35v electrolytic capacitor capacitor 470uf/63v 0912LD20 ADG419 capacitor 226 20V 47pf 55QT
Contextual Info: 0912LD20 20 Watts, 28 Volts Pulsed Avionics 960 to 1215 MHz LDMOS FET CASE OUTLINE 55QT Common Source GENERAL DESCRIPTION The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.

3400 transistor

Abstract: transistor 3400 3134-65M
Contextual Info: 3134-65M Rev B 3134-65M 65Watts, 34 Volts, 200us, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE Common Base The 3134-65M is an internally matched, COMMON BASE bipolar transistor capable of providing 65Watts of pulsed RF output power at 200us pulse width,

1458

Abstract: L-Band 1200-1400 MHz IC 1458
Contextual Info: 1214 - 300 300 Watts - 50 Volts, 100µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-300 is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred microseconds pulse width, ten percent duty factor across the band 1200 to

TAN15

Contextual Info: TAN15 15 Watts, 40 Volts, Pulsed Avionics 960 - 1215 MHz GENERAL DESCRIPTION The TAN15 is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 960-1215 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF. The transistor

MDS800

Contextual Info: R.3.110599 MDS800 800 Watts, 50 Volts, Pulsed Avionics 1090 MHz PRELIMINARY GENERAL DESCRIPTION CASE OUTLINE 55ST Style 1 The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1090 MHz, with the pulse

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

PH1090-550S

Contextual Info: Avionics Pulsed Power Transistor 550 Watts, 1030-1090 MHz, 10µs Pulse, 1 % Duty PH1090-550S PH1090-550S Avionics Pulsed Power Transistor - 550 Watts, 1030-1090 MHz, 10µs Pulse, 1% Duty 1 Features • • • • • • • • • Outline Drawing Designed for Short Pulse IFF Applications

1035 transistor

Abstract: M.P transistor
Contextual Info: 1035 MP 35 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes

55ay

Abstract: DME150
Contextual Info: DME 150 150 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The DME 150 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven

sfnf065a

Abstract: TO228
Contextual Info: S O L IT R O N D E V IC E S INC- 7D d e . | a a tflb D a o a o n a a SWITCH MOS i | t^39^o7 SFNF065A POWER MOS MAXIMUM IDM VGS PD h ^•J oper T stg I. UNITS Voltage, Drain to Source 60 V Drain Current, Continuous @ T =25°C ’ c Drain Current, Pulsed

NX7328BF-AA

Abstract: NX7328BF-AA-AZ
Contextual Info: NEC's 1310 nm InGaAsP MQW FP PULSED LASER DIODE NX7328BF-AA IN COAXIAL PACKAGE FOR OTDR APPLICATION 70 mW MIN FEATURES DESCRIPTION • HIGH OUTPUT POWER: Pf = 110 mW at IFP = 400 mA, Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%. NEC's NX7328BF-AA is a 1310 nm Multiple Quantum Well

13MM

Abstract: PH3134-2OL transistor f20 PH3134
Contextual Info: Radar Pulsed Power Transistor, 2OW, 300~s Pulse, 10% Duty PH3134-2OL 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors