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PTFA261702E Datasheets (3)

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Infineon Technologies

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
PTFA261702E		Infineon Technologies	2400 MHz to 2700 MHz; Package: PG: H-30275-4; Flange Type: Bolt Down; Matching: I/O; Frequency Band: 2,500.0 - 2,700.0 MHz; P_1dB (typ): 170.0 W; Supply Voltage: 28.0 V;	Original	PDF	368.28KB	10
PTFA261702EV1		Infineon Technologies	RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 170W H-30275-4	Original	PDF		10
PTFA261702E V1		Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 170W H-30275-4	Original	PDF	364.11KB

PTFA261702E Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking l33 Abstract: transistor L44 L33 TRANSISTOR BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	ptfa261702e 170-watt marking l33 transistor l44 +5l33 transistor bcp56 lm7805 ro4350 l42 marking transistor	PDF
l35 CAPacitor Abstract: 1800 ldmos marking l33 BCP56 LM7805 PTFA261702E RO4350 L42 marking transistor ATC Semiconductor Devices Contextual Info: PTFA261702E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 170 W, 2500 – 2700 MHz Description The PTFA261702E is a 170-watt LDMOS FET designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features	Original	ptfa261702e 170-watt l35 capacitor 1800 ldmos +6marking l33 bcp56 lm7805 ro4350 l42 marking transistor atc semiconductor devices	PDF
PG-DSO-20 Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test	Original	pg-dso-20 pg-rfp-10 h-34265-8 h-33265-8 +15h-30248-2 h-36248-2 h-33288-2 h-31248-2 h-37248-2 h-34288-2 a1807 ptfa211801e h-32259-2 lt 860 ptfa071701gl ptfa072401fl 1800 ldmos 1805-1880 ptma210452m	PDF
PTFB182503FL Abstract: PTFA08150 "RF Power Transistors" PTFA081501E PTFA092213EL PTFB PG-DSO-20-63 PTFA211801E PTFB182503 PTFB192503 Contextual Info: Never stop th i nking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production	Original	ptfa041501e ptfa041501f pg-dso-20-63 pg-rfp-10 +15h-33265-8 h-34265-8 h-30260-2 h-36260-2 h-30265-2 h-30248-2 ptfb182503fl ptfa08150 rf power transistors ptfa081501e ptfa092213el ptfb ptfa211801e ptfb182503 ptfb192503	PDF