PT 915 Search Results

Contextual Info: W83194BR-PT WINBOND STEPLESS VIA PT MAIN CLOCK GENERATOR -I- Publication Release Date:April 13, 2005 Revision 1.1 W83194BR-PT Table of Contents1. GENERAL DESCRIPTION . 1

400M

Abstract: SEL24 W83194BG-911 W83194BR-911
Contextual Info: W83194BR-911 W83194BG-911 Winbond STEPLESS VIA PT/PM MAIN CLOCK GENERATOR Date: Mar/22/2006 Revision: 0.71 W83194BR-911, W83194BG-911 STEPLESS CLOCK FOR VIA PT/PM CHIPSET W83194BR-911/W83195BG-911 Data Sheet Revision History PAGES DATES VERSION WEB VERSION

Contextual Info: W83194BR-903 WINBOND STEPLESS VIA PT/PM MAIN CLOCK GENERATOR -I- Publication Release Date: April 13, 2005 Revision 1.1 W83194BR-903 Table of Contents1. GENERAL DESCRIPTION . 1

SEL24

Abstract: W83194BR-903
Contextual Info: W83194BR-903 WINBOND STEPLESS VIA PT/PM MAIN CLOCK GENERATOR -I- Publication Release Date: December 23, 2004 Revision 1.0 W83194BR-903 Revision History PAGES DATES VERSION WEB VERSION MAIN CONTENTS n.a. All of the versions before 0.50 are for internal use.

W83194BR-903

Abstract: PSKE SEL24 W83194BG-903
Contextual Info: W83194BR-903 & W83194BG-903 STEPLESS VIA PT/PM MAIN CLOCK GENERATOR Date: 5/2/2006 Revision: 1.0 W83194BR-903/W83194BG-903 W83194BR-903 Datasheet Revision History PAGES DATES VERSION WEB VERSION MAIN CONTENTS n.a. All of the versions before 0.50 are for internal

g30n60

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

30N60C3

Abstract: g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4
Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT With Diode IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE sat ≤ tfi(typ) = High Speed PT IGBTs for 40-100kHz switching 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: FLL200IB-L FLL200IB-2 , FLL200IB-3 L-tìand Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 83.3 w Total Power Dissipation pt

12AWG

Abstract: 480VAC R1035
Contextual Info: PT&PY SERIES 3-PHASE P.C.B. FILTERS INTRODUCTIONS COMPONENT 1. Applications: Electric equipment, UPS, machine tool, copy machine, automation equipment, robot, AC motor drive 2. Voltage rating: 250/480VAC 3. Operating frequency: 50/60Hz PART NO. Cx1 uF Cx2(uF) Cy(uF) L(mH) Z(VDC) SA(VDC)

FEE430

Abstract: FEE 160 FEE532 FEE160-2 25CC PF500 UL-94-V0 FEE425 FEE509 fee 222-3-2
Contextual Info: PT EuC H lN IsT ReO L *C O MEP A EN Y A FEE 100 - 900 Series Low Cost Pow er Inductors , Inductances de puissance série économique K ey Features Caractéristiques Application schematics for Low Cost Pow er Inductors Schém as d'application pour inductance de puissance

bd657

Abstract: amf panel
Contextual Info: 4 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED 19 RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. LOC DI ST REVISIONS FT ALL INTERNATIONAL RIGHTS RESERVED. ZONE LTR DE SC RI PT IO N OBS -5 S REDWN PER BD6577 REV PER EC 0320-82-97

SOT-23 marking l31

Abstract: HSMS-2850 HSMS-285A HSMS-285X HSMS-2860 HSMS-286X MARKING- L31 L30 SOT143 HSMS2850
Contextual Info: 3 Absolute Maximum Ratings, Ta = +25°C, Single Diode Symbol Absolute Maximum[1] Parameter HSMS-285x HSMS-286x 75 mW 250 mW PT Total Device Dissipation[2] PIV Peak Inverse Voltage 2.0 V 4.0 V TJ Junction Temperature 150°C 150°C TSTG Storage Temperature -65°C to 150°C

G30N60

Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
Contextual Info: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

NTE220

Contextual Info: 15 AM High Density T1/E1 Framer With Integrated VT/TU & DS3/E3 Mappers and M13 MUX ASSP Telecom Standard Product Data Sheet Released y, 14 Se pt em TEMUX 84E3 be r, 20 04 06 :4 8: PM8320 Data Sheet Released Issue No. 4: December, 2003 Do wn lo ad ed by Co

IXGP30N60C3D4

Abstract: IXGA30N60C3D4 g30N60
Contextual Info: IXGA30N60C3D4 IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

ixgh30n60c3d1

Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: 48 AM S/UNI 12xJET ASSP Telecom Standard Product Data Sheet Register Description Released be r, 20 04 07 :3 1: PM5383 y, 14 Se pt em S/UNI® 12xJET in er In co n Tu es da Saturn® User Network Interface Device for J2/E3/T3 Proprietary and Confidential Released

Contextual Info: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXGH30N60C3D1

Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
Contextual Info: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ

Contextual Info: bei Type 2JS / 3JS Time-lag Fuse Series JS Apr2013D HF ptì 5 X 15mm Glass Tube R 0H S 6 Compliant 2JS / 3JS Series, 5 x 15mm Time-lag Fuse oTO us <^ > C € Description 5x15 mm Time -lag ,glass tube body cartridge fuse designed, approved and com plied w ith UL and CSA

Contextual Info: 7 6 1 70107 3 1 CKT. SIZE NOTFS: 1 M ATERIAL: PO LY ES TE R , COLOR: BLACK 9 4V -0 2) HOUSING TO BE USED WITH TERMINAL PT . NO. 70021-»*»» 3) SEE CHART FOR CIRCUIT 5) PANEL THICKNESS 0.8 D /.032 - (2.361/.093 6) SEE SHEET 3 FOR MOUNTING HOLE DIMENSIONS.

Contextual Info: :4 5: 23 AM RM5231A Microprocessor with 32-Bit System Bus Data Sheet Released es da y, 14 Se pt em be r, 20 04 06 RM5231A Data Sheet Proprietary and Confidential Released Issue 4, February 2004 Do wn lo ad ed by Co nt e nt Te a m of P ar tm in er In co