PPC POWER TRANSISTOR Search Results

2SC3851

Abstract: 1488A 2SC3851A RL6A2
Contextual Info: SavantIC Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SA1488/1488A APPLICATIONS ·Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION

2SC3851

Abstract: 2SC3851A npn ic 25mA 2SA1488
Contextual Info: Inchange Semiconductor Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION

2SC3851

Abstract: 2SC3851A 2SC3851 A
Contextual Info: JMnic Product Specification 2SC3851 2SC3851A Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SA1488/1488A APPLICATIONS ・Audio and PPC high voltage power supply ,and general purpose PINNING PIN DESCRIPTION 1 Base 2

PPC2228

Abstract: PPC2229
Contextual Info: P P C 45E D PRODUCTS CORP • •4 bflSblll OOQOTia 7 ■ PPC NPN Power Da . Transistor PC2229 r-33-2^ C H IP TYPE: AU FEATURES • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal Collector - Gold - 3,000 A Nominal

PPC PRODUCTS CORP

Abstract: 2C4300 2C5333
Contextual Info: b ê S b l S l □□OG'iS? TO? • PPC NPN Power Transistor Chips T -3 > 3 > - o \ FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness ■ 10 Mils Nominal

2C4031

Abstract: 2C4030 2C4032 2C4033 ic4010
Contextual Info: P P C P R O D U C T S CORP 2C4030 2C4032 LjOE D bflSblll DDDO' ìSLd T7Q • PPC PNP Low Power Transistor Chips 2C4031 2C4033 I ^T-33-O \ FEATURES CHIP TYPE: AJ • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 20,000 A Nominal

2C6211

Abstract: 2C6212 2C6213 2C6214
Contextual Info: P P C PRODUC TS Q D • | ■ I CO R P bOE 2C6211 2C6213 D tfiStlIl □ÜDDRb5 TÖ3 ■ PPC PNP High Voltage Power Transistor Chips 2C6212 2C6214 "P3VO\ FEATURES CHIP TYPE: AL • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 50,000 A Nominal

2C4300

Abstract: 2C5333 chip die npn transistor
Contextual Info: P P C PRODUCTS CORP bDE D • b flS b m □DOO'ìba 1GG W PPC PNP Power Transistor Chips 2C5333 FEATURES CHIP TYPE: AP • Epitaxial, Planar Design • Contact Metallization: Base, Emitter - Aluminum - 30,000 A Nominal Collector - Gold - 3,000 A Nominal • Die Thickness - 10 Mils Nominal

lc 5013

Abstract: 2C5012 2C5013 2C5014 2C5015 LE50
Contextual Info: P P C PRODUCTS CORP 2 2( 12 »13 böSbm bOE » □DOQ'iSfl fl43 • PPC NPN High Voltage Low Power Transistor Chips 2C5014 2C5015 ~ r - 1*7-0 \ CHIP TYPE: AA FEATURES • Triple Diffused, Planar Design • Base, Em itter M etallization: Alum inum • M etallization Thickness: 20,000 A Nom inal

2C2151

Abstract: 120VDC
Contextual Info: P P C PRODUCTS bOE CORP ¡ PPC D 5-A NPN Power Transistor Chips 2C2151 pp Vs-oi FEATURES CHIP TYPE: AN • Epitaxial, Planar Design • C ontact M etallization: Base, Em itter - Alum inum - 30,000 A Nominal C ollector - Gold - 3,000 A Nom inal • Die Thickness - 1 0 Mils N om inal

Contextual Info: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •

Contextual Info: m m a PPC, he. • Micmsemi Progress Powered by Technology 7516 C entral In d u s tria l D rive R iv ie ra B each, F lo rid a 33404 PHONE: 561 842-0305 FAX: (561)845-7813 APPLICATIONS: • • • Drivers Switches Medium-Power A m plifiers FEMURS: • •

BD947

Abstract: to-53 a/TO111
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) hFE fT ICBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)«at Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 .15 .

TO111

Abstract: 2SD189 to-53 2SC647 2SD772B
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO on PD hFE fT •CBO Max ON) Min (Hz) (A) r Max (s) Max (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or Mor , (Cont'd) . . . .5 -10 2SD772 2SD772A

2N7373

Abstract: JANS2N5153 2N5154 TO-254 2N7372 datasheet 2N7373 transistor 2N5005 2N7372 Schottky jans JANS2N5004
Contextual Info: Spring/Summer 1998 Bipolar Transistors by Carlton B. Mowry, Microsemi PPC, Inc., cmowry@microsemi.com Bipolar transistors have been used in Although only a few space applications for years. There is a examples have been history of device types that are furnished, there are many

2SA1106 SANKEN

Abstract: TO247s BD141 PNP 2sc1116A sanken 2SA1186 SANKEN BU124 texas SDT7605 2sA747A sanken BU124 2SB705
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE fT ON) Min (Hz) ICBO *ON r Max Max (A) (s) Max (Ohms) (CE)sat Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . -10 -15 20 . .

BDY96

Abstract: DTS519 60M6 2n2114 IR519
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Max hFE fT •CBO Max t0N Max Of) ON) Min (HZ) (A) (8) PD r (CE)sat Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40

DTS517

Abstract: BUV28A
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A V(8R)CEO Of) PD Max ON) hFE fT 'CBO Max t0N Max Min (HZ) (A) (s) r (CE)ut Max Toper Max (Ohms) (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .15

KT827A

Abstract: SDT7530 SDT80 1748-1820 BLX84 BLX86 sk3561 BLX87
Contextual Info: POWER SILICON TRANSISTORS Item Number >C Part Number Manufacturer Type Max A hFE fT ICBO Max Max ton Max on ON) Min (Hz) (A) (a) 97 100 100 100 100 100 100 122 122 125 150 150 175 175 175 175 175 175 175 20 75 30 30 750 10 30 30 20 20 20 20 20 20 30 175

KT827B

Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780

BD160

Abstract: 2SC3303 2SD1147 to-53 2sb550
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .

2S721

Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .

2u 62 diode

Abstract: 2SC1115 bd313 KT808BM sdt7603 2u 87 diode 2u 45 diode diode 2U 66 bdy19
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V 8R CEO (A) Of) hFE fT 'CBO Max Max toN Max ON) Min (Hz) (A) (s) PD r (CE)ut Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15

MIL-S-19500

Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Contextual Info: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S