POWER MOSFET IRF450 Search Results

IRF450

Abstract: TA17435 mosfet IRF450 TB334
Contextual Info: IRF450 Data Sheet March 1999 13A, 500V, 0.400 Ohm, N-Channel Power MOSFET • 13A, 500V Formerly developmental type TA17435. Ordering Information IRF450 PACKAGE TO-204AA 1827.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,

IRF450 equivalent

Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 500 Volt, 0.3 Ohm, 9.0A MOSFET œ Low RDS on œ Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

IRF450

Abstract: SHD218505
Contextual Info: SENSITRON SEMICONDUCTOR SHD218505 TECHNICAL DATA DATA SHEET 1012, REV Formerly Part Number SHD2185/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 500 Volt, 0.3 Ohm, 9.0A MOSFET • Low RDS on • Equivalent to IRF450 Series MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED.

Contextual Info: rz7 SGS-THOMSON ^ 7 #. MISfSmiraMO ! TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: IRF450 CASE OUTLINE: TO-3 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

mosfet IRF450

Abstract: power mosfet irf450
Contextual Info: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage

IRF450

Contextual Info: IRF450 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) 2 1 26.67 (1.050) max. 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 17.15 (0.675) 16.64 (0.655) 7.87 (0.310) 6.99 (0.275)

Contextual Info: N-CHANNEL POWER MOSFET IRF450 • Hermeticaly Sealed TO-3 Metal Package • Simple Drive Requirements • Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VDS VGS ID ID IDM PD Drain – Source Voltage Gate – Source Voltage

IRF450

Abstract: mosfet IRF450 mosfet n channel
Contextual Info: TECHNICAL DATA POWER MOSFET N CHANNEL Devices 13 AMPERE 500 VOLTS 0.4 Ω IRF450 • • • • REPETITIVE AVALANCHE RATINGS LOW RDS ON LOW DRIVE REQUIREMENT DYNAMIC dv/dt RATING ABSOLUTE MAXIMUM RATINGS (TC = 250C unless otherwise noted) Parameters / Test Conditions

"high voltage current mirror"

Abstract: Automatic voltage regulator RBS MOTOR SOFT START 10 AMP 1000V RECTIFIER DIODE high voltage current mirror 220 ac INVERTER without transformer design of mosfet based power supply automatic transfer switch 400v circuit diagram N CHANNEL MOSFET 10A 1000V IRF450 equivalent
Contextual Info: Harris Semiconductor No. AN9335 Harris Intelligent Power December 1993 HIP5500 HIGH VOLTAGE 500VDC POWER SUPPLY DRIVER IC Author: George E. Danz Introduction MOSFET (shown shaded in Figure 1), this approach lacks the advantages of a “distributed” turn-off device and doesn’t

IRF150 MOSFET AMP circuit

Abstract: forsythe MOSFET IRF150 1. A 48V, 200A Chopper For Motor S. Clemente A2JA Chopper For Motor S. Clemente ant B. Pelly IRF9130 R. Severns "Controlling Oscillation in AN942 irf150
Contextual Info: Paralleling Of Power MOSFETs For Higher Power Output James B. Forsythe, Member IEEE International Rectifier, E1 Segundo, California Abstract - Dynamic current and transition energy unbalance resulting from parameter mismatch between parallel MOSFET branches are mapped over wide operating ranges. Unbalance generator magnitudes are given

Contextual Info: mi = ^ = llll IRF450 SEME LAB MECHANICAL DATA D im ensions in m m inches N-CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40(1.197) 30.15(1.187) 17.15 (0.675)_ 16.64 (0.655) 500V V DSS ^D(cont) _ * 0 ? (0.161) 3.84 (0 .Ï5 Ï) dia. 2 pics. -JL o o a ; 2- •—

uis test

Abstract: BUZ45 BUZ21
Contextual Info: F=7 SCS-THOMSON “ / # » [¡» » Ë lL Iiê ïE M O Ê S TECHNICAL NOTE IMPROVED POWER MOSFET RUGGEDNESS IN UNCLAMPED INDUCTIVE SWITCHING INTRODUCTION Recent development work by SGS-Thomson has resulted in the production of POWER MOSFETs with improved performance in terms of unclamped

Contextual Info: IRF450R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)13 I(DM) Max. (A) Pulsed I(D)8.1 @Temp (øC)100 IDM Max (@25øC Amb)52 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

irf450lc

Abstract: IRFP450LC IRFPE30 irf450
Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

irf450lc

Abstract: IRFP450LC IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated

IRF450

Abstract: mosfet IRF450
Contextual Info: PRELIMINARY SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 12 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poly silicon gate

IRF450L

Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

IRF450LC

Abstract: IRFP450LC IRFPE30
Contextual Info: PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V V gs Rating Reduced C iss, Coss, Crss Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated VDSS = 500V RDS on = 0.40 Ω

IRF 544 N MOSFET

Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Contextual Info: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no

IRF450

Abstract: mosfet IRF450 TO-254
Contextual Info: ^§H PRELIMINARY SFF450C SOLID STATE DEVICES, INC 14849 Firestone Boulevard La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Í2 N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■

IRF450

Abstract: ID72
Contextual Info: PRELIMINARY SFF450/61 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 13 AMP 500 VOLTS 0.40Q N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: • ■ ■ ■ ■ ■ ■ ■

IRFP450 inverter

Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
Contextual Info: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .