POWER DIODE 800V 12A Search Results

TC.. 12A MOSFET Drivers

Abstract: APT22F80B APT22F80S MIC4452
Contextual Info: APT22F80B APT22F80S 800V, 22A, 0.50Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT22F80B APT22F80S 800V, 22A, 0.50Ω Max, trr ≤260ns N-Channel FREDFET TO -2 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT22F80B

Abstract: APT22F80S MIC4452 two switch forward converter
Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT1201R2BFLL

Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

APT1201R2BFLL

Abstract: APT1201R2SFLL
Contextual Info: APT1201R2BFLL APT1201R2SFLL 1200V 12A 1.200Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT1201R2BFLL

Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

diode 1000V 10a

Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
Contextual Info: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

"12n80"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

12n80

Abstract: "12n80"
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

IKW03N120H2

Abstract: k03h1202 smps* ZVT 15v 60w smps Electronic ballast 220 v 40W IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 IKW03N120H2 K03H1202
Contextual Info: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

Contextual Info: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

Contextual Info: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

Contextual Info: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

Contextual Info: IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

RG-2A Diode

Abstract: PG-TO-247-3 K03N1202 3V10A
Contextual Info: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

k03h1202

Abstract: 05852 IKW03N120H2 15v 60w smps
Contextual Info: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

K03H1202

Abstract: 05852 k03h120 k03h12 15v 60w smps DIODE 3A 1000V IKW03N120H2 IKP03N120H2 PG-TO-220-3-1 PG-TO-247-3-21
Contextual Info: IKP03N120H2 IKW03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits