POWER DIODE 800V 12A Search Results

APT22F80B

Abstract: APT22F80S MIC4452 two switch forward converter
Contextual Info: APT22F80B APT22F80S 800V, 23A, 0.43Ω Max, trr ≤260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft

APT1201R2BFLL

Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Contextual Info: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET 1 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

BUS11A PHILIPS SEMICONDUCTOR

Contextual Info: N AUER PHILIPS/DISCRETE 25E D • bb53,m Q01b22Q b ■ T~32-0t Power Devices HIGH SPEED, HIGH VOLTAGE DARLINGTONS in order of current rating PACKAGE O U T LIN E *C(DC)(U V CBO V CEO SOT-93 6A 800V 900V BUV90 SOT-93 12A BUV90F SOT-199 ESM3045AV ESM 3045DV

"12n80"

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

12n80

Abstract: "12n80"
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Preliminary 12A, 800V N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is specialized in

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 12N80 Power MOSFET 12A, 800V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is

P-TO-247-3-1

Abstract: smps* ZVT Electronic ballast 40W IKB03N120H2 1000v 3a diode Electronic ballast 220 v 40W f 9222 l Q67040-S4594 IKP03N120H2 IKW03N120H2
Contextual Info: IKP03N120H2, IKW03N120H2 IKB03N120H2 HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter C G 2nd generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

13GP12

Abstract: APT13GP120BD1 13gp120bd1
Contextual Info: APT13GP120BD1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode

D12E120

Abstract: IDB12E120 IDP12E120 Q67040-S4385 Q67040-S4389 150-TC3
Contextual Info: IDP12E120 IDB12E120 Preliminary data Fast Switching EmCon
Diode Product Summary Feature 1200 V IF 12 A VF 1.65 V Tjmax 150 °C VRRM
1200 V EmCon technology
Fast recovery
Soft switching
Low reverse recovery charge P-TO220-3.SMD
Low forward voltage

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

APT10090BLL

Abstract: APT10090SLL
Contextual Info: APT10090BLL APT10090SLL 1000V 12A 0.900Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

DD 127 D

Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT10090BFLL

Abstract: APT10090SFLL
Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A 0.900Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT12040

Contextual Info: APT12040JLL 1200V 24A 0.400Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses

Contextual Info: APT10090BFLL APT10090SFLL 1000V 12A POWER MOS 7 FREDFET 0.950 BFLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering

APT12040JFLL

Abstract: APT30DF120
Contextual Info: APT12040JFLL 1200V 24A 0.400Ω POWER MOS 7 R Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

Contextual Info: APT10090BLL APT10090SLL 1000V 12A 0.900Ω POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT12040JFLL 1200V 24A 0.400Ω R POWER MOS 7 Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel

smps* ZVT

Abstract: 1200v 3A 15v 60w smps Electronic ballast 40W IGB03N120H2 IGP03N120H2 IGW03N120H2 Q67040-S4596 Q67040-S4599 P-TO-247-3-1
Contextual Info: IGP03N120H2, IGW03N120H2 IGB03N120H2 HighSpeed 2-Technology • • Designed for: - SMPS - Lamp Ballast - ZVS-Converter - optimised for soft-switching / resonant topologies C G E nd 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits

G03H1202

Abstract: IGA03N120H2 IKP03N120H2 PG-TO220-3-31
Contextual Info: IGA03N120H2 HighSpeed 2-Technology C • Designed for: - TV – Horizontal Line Deflection • 2 generation HighSpeed-Technology for 1200V applications offers: - loss reduction in resonant circuits - temperature stable behavior - parallel switching capability