IKB03N120H2 Search Results
IKB03N120H2 Datasheets (5)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IKB03N120H2 |
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IGBT Chip, N Channel, 1200V, TO-263, 3-Pin | Original | 59.17KB | 3 | ||
| IKB03N120H2 |
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IGBT with Anti-Parallel Diode; Package: PG-TO263-3; Switching Frequency: HighSpeed2 30-100 kHz; Package: TO-220; VCE (max): 1,200.0 V; IC(max) @ 25°: 9.6 A; IC(max) @ 100°: 3.9 A | Original | 410.13KB | 14 | ||
| IKB03N120H2 |
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1200V HighSpeed2 IGBT and 600V HighSpeed IGBT with antiparallel fast recovery EmCon diode in only one package. | Original | 437.72KB | 15 | ||
| IKB03N120H2ATMA1 |
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Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 1200V 9.6A 62.5W TO220-3 | Original | 653.49KB | |||
| IKB03N120H2E3045A |
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IGBTs & DuoPacks - 3A 1200V HighSpeed2 DuoPack IGBT D2Pak | Original | 437.72KB | 15 |
IKB03N120H2 Price and Stock
Infineon Technologies AG
Infineon Technologies AG IKB03N120H2ATMA1Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKB03N120H2ATMA1 | 12,509 |
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Get Quote | |||||||
Infineon Technologies AG IKB03N120H2XTInsulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IKB03N120H2XT | 642 |
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Get Quote | |||||||